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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2004.09.24 Page No. : 1/4 HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching applications. TO-251 Features * High breakdown voltage * Low collector saturation voltage * Fast switching speed Absolute Maximum Ratings (TA=25C) * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature .................................................................................................................................... +150 C * Maximum Power Dissipation Total Power Dissipation (TC=25C) .................................................................................................................... 10 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................................................... 600 V BVCEO Collector to Emitter Voltage.................................................................................................................... 400 V BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V IC Collector Current (DC) ............................................................................................................................... 300 mA IC Collector Current (Pulse)............................................................................................................................ 600 mA IB Base Current (DC)........................................................................................................................................ 40 mA IB Base Current (Pulse).................................................................................................................................. 100 mA Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 Min. 600 400 6 8 10 Typ. Max. 10 10 10 400 750 1 36 Unit V V V uA uA uA mV mV V IC=100uA IC=10mA IE=10uA VCB=550V VCB=400V VEB=6V IC=50mA, IB=10mA IC=100mA, IB=20mA IC=50mA, IB=10mA VCE=10V, IC=10mA VCE=10V, IC=50mA *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions HLB121I HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Dc Current Gain & Collector Current 100 100000 Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2004.09.24 Page No. : 2/4 Saturation Voltage & Collector Current hFE @ VCE=10V 10 Saturation Voltage (mV) 10000 hFE 1000 VBE(sat) @ IC=5IB 100 VCE(sat) @ IC=5IB 1 1 10 100 1000 10 1 10 100 1000 Collector Current (mA) Collector Current (mA) On Voltage & Collector Current 10000 Capacitance Reverse Biased Voltage 1000 Collector Current (mA) On Voltage-Bton 100 Cib 1000 Bton @ VCE=10V 10 Cob 100 0 100 200 300 400 500 600 1 0.1 1 10 100 Collector Current (mA) Reverse Biased Voltage (V) Switching Time & Collector Current 10 VCC=100V, IC=5IB1=-5IB2 10000 Safe Operating Area Switching Time (us) Collector Current (mA) 1000 Ton 1 Tstg 100 PT=1ms PT=100ms PT=1s Tf 0.1 0 100 200 300 400 500 600 10 0 50 100 150 200 250 Collector Current (mA) Forward Biased Voltage (V) HLB121I HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-251 Dimension Marking: A Tab Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2004.09.24 Page No. : 3/4 M Pb Free Mark F a1 Pb-Free: " . " (Note) H Normal: None LB C G Date Code 121 I Control Code Note: Green label is used for pb-free packing 1 2 3 H L Pin Style: 1.Base 2/Tab.Collector 3.Emitter Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H H1 K K1 L M a1 a2 Min. 6.40 5.20 1.40 5.40 1.50 7.20 0.60 0.50 0.90 2.20 0.45 - Max. 6.80 5.50 1.60 6.25 1.80 9.80 1.10 0.90 1.50 2.40 0.65 *2.30 *: Typical, Unit: mm K K1 H1 a1 a2 a2 3-Lead TO-251 Plastic Package HSMC Package Code: I A B C D a1 E G Marking: M F y1 a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None LB 121 I Date Code Control Code I H y1 y1 Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K K1 H1 a2 y2 a2 y2 a1 DIM A B C D E F G H H1 I J K K1 M a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.20 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 *1.80 *9.30 *16.10 *0.80 0.96 *0.76 2.40 0.60 2.50 5o 3o 3-Lead TO-251 Plastic Package HSMC Package Code: I *: Typical, Unit: mm Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB121I HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2004.09.24 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HLB121I HSMC Product Specification |
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