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European PowerSemiconductor and Electronics Company GmbH + Co. KG
Marketing Information FZ 1200 R 12 KF 4
18 screwing depth max. 8 61,5 M8
31,5
130 114
M4
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E 2,5 18,5
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C 7 16,5
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external connection to be done
C
C
G E E E
external connection to be done
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A15/97 Mod-E/ 21.Jan 1998 G.Schulze
FZ 1200 R 12 KF4
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prufspannung
Hochstzulassige Werte / Maximum rated values
collector-emitter voltage DC-collector current repetitive peak collctor current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current insulation test voltage VCES IC ICRM Ptot VGE IF IFRM VISOL min. 4,5 typ. 2,7 3,3 5,5 90 16 100 0,7 0,8 0,9 1,0 0,10 0,15 170 190 1200 1200 2400 7800 20 1200 2400 2,5 max. 3,2 3,9 6,5 200 400 400 V A A W V A A kV
tp=1 ms tC=25C, Transistor /transistor
tp=1ms RMS, f=50 Hz, t= 1 min.
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sattigungsspannung Gate-Schwellenspannung Eingangskapazitat Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) iC=1,2kA, vGE=15V, t vj=25C iC=1,2kA, vGE=15V, t vj=125C iC=48mA, vCE=vGE, tvj=25C fO=1MHz,tvj=25C,vCE=25V, v GE=0V vCE=1200V, vGE=0V, t vj=25C vCE=1200V, vGE=0V, t vj=125C vCE=0V, v GE=20V, tvj=25C vCE=0V, v EG=20V, tvj=25C iC=1,2kA,vCE=600V vL = 15V, R G = 0,82 , tvj=25 vL = 15V, R G = 0,82 , tvj=125 iC=1,2kA,vCE=600V vL = 15V, R G = 0,82 , tvj=25 vL = 15V, R G = 0,82 , tvj=125 iC=1,2kA,vCE=600V vL = 15V, R G = 0,82 , tvj=25 vL = 15V, R G = 0,82 , tvj=125 iC=1,2kA, vCE=600V, L s=70nH vL=15V,R G=0,82 ,T vj=125C iC=1,2kA, vCE=600V, L s=70nH vL=15V,R G=0,82 ,T vj=125C vCE sat vGE(th) Cies iCES iGES iEGS ton
V V V nF mA mA nA nA
ts -
- s - s - s - s - s - s - mWs - mWs
Speicherzeit (induktive Last)
storage time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
tf
Einschaltverlustenergie pro Puls Abschaltverlustleistung pro Puls
turn-on energy loss per puls turn-off energy loss per puls
Eon Eoff
Charakteristische Werte / Characteristic values
Inversdiode / Inverse diode Durchlaspannung Ruckstromspitze forward voltage peak reverse recovery current iF=1,2kA, vGE=0V, t vj=25C iF=1,2kA, vGE=0V, t vj=125C iF=1,2kA, vRM=600V, v EG = 10V -diF/dt = 6 kA/s, tvj = 25C t vj = 125C iF=1,2kA, vRM=600V, v EG = 10V -diF/dt = 6 kA/s, tvj = 25C tvj = 125C vF IRM 2,2 2,0 400 700 50 150 2,7 V 2,5 V -A -A - As - As
Sperrverzogerungsladung
recovered charge
Qr
Thermische Eigenschaften / Thermal properties
Innerer Warmewiderstand Ubergangs-Warmewiderstand Hochstzul. Sperrschichttemperatur Betriebstemperatur Lagertemperatur thermal resistance, junction to case thermal resistance, case to heatsink max. junction temperature operating temperature storage temperature Transistor / transistor, DC Transistor,DC,pro Zweig/per arm pro Modul / per Module pro Modul / per Module Transistor / transistor RthJC RthCK tvj max tc op tstg 0,016 0,032 0,008 150 -40...+125 -40...+125 C/W C/W C/W C C C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation Anzugsdrehmoment f. mech. Befestigung Anzugsdrehmoment f. elektr. Anschlusse Gewicht internal insulation mounting torque terminal connection torque weight terminals M6 / tolerance +/-15% terminals M4 / tolerance +/-15% terminals M8 M1 M2 G AI2O3 5 2 8...10 ca. 1500 Nm Nm Nm g
Bedingung fur den Kurzschluschutz / Conditions for short-circuit protection tfg = 10 s VCC = 750 V vL = 15 V vCEM = 900 V RGF = RGR = 0,82 iCMK1 10000 A tvj = 125C iCMK2 8000 A Unabhangig davon gilt bei abweichenden Bedingungen / with regard to other conditions
v CEM = VCES - 15nH x |dic/dt|
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
FZ 1200 R12 KF4
2500
2500
VGE=20V
15V 12V
iC [A] 2000
iC [A] 2000
10V
1500
1500
9V
1000
1000
8V
500
500
0 1.0
1.5
2.0
2.5
3.0
3.5
4.0 v CE [V]
4.5
5.0
0 1.0
1.5
2.0
2.5
3.0
3.5
4.0 v CE [V]
4.5
5.0
FZ1200R12KF4
FZ1200R12KF4
Bild/Fig. 1 Kollektor-Emitter-Spannung im Sattigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) VGE = 15V ----- T vj = 25 C ___ Tvj = 125 C 2500 t vj = 125 C 25 C 2500
Bild/Fig. 2 Kollektor-Emitter-Spannung im Sattigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) Tvj = 125 C
iC [A] 2000
iC [A]
2000
1500
1500
1000
1000
500
500
0
5
6
7
8
9
10 v GE [V]
11
12
0
0
200
400
600
800
1000
1200
1400
FZ1200R12KF4
FZ1200R12KF4
v CE [V]
Bild/Fig. 3 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) VCE = 20 V
Bild/Fig. 4 Ruckwarts-Arbeitsbereich Reverse biased safe operating area tvj = 125 C, vLF = vLR = 15 V, RG = 0,82
FZ 1200 R12 KF4
10-1
2500
6 Z(th)JC [C/W] 3 2
Diode
iF [A] 2000
IGBT
1500
10-2 1000 5 3 2
500
10-3 -3 10
2
4
10-2
2
4
10-1
2
4
100
2
4
101
0 0.5
FZ1200R12KF4
1.0
1.5
2.0
2.5 v F [V]
3.0
FZ1200R12KF4
t [s ]
Bild/Fig. 5 Transienter innerer Warmewiderstand (DC) Transient thermal impedance (DC)
Bild/Fig. 6 Durchlakennlinie der Inversdiode (typisch) Forward characteristic of the inverse diode (typical) tvj = 25 C tvj = 125 C
Terms & Conditions of Usage
Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact".


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