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| Composite Transistors XP03389 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features * Two elements incorporated into one package (Transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half 1 2 3 (0.425) Unit: mm 0.12+0.05 -0.02 0.200.05 5 4 1.250.10 2.10.1 (0.65) (0.65) Basic Part Number * UNR2211 + UNR2118 10 1.30.1 2.00.1 0.90.1 Absolute Maximum Ratings Ta = 25C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 -50 -50 -100 150 150 -55 to +150 Unit V V mA V V mA mW C C 1 Tr1 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) EIAJ: SC-88A 0 to 0.1 Marking Symbol: DX Internal Connection 5 4 0.9+0.2 -0.1 4: Collector (Tr2) 5: Collector (Tr1) Base (Tr2) SMini5-G1 Package 5 Tr2 2 3 0.20.1 Publication date: June 2003 SJJ00160BED 1 XP03389 Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k -30% 0.8 10 1.0 150 4.9 0.2 +30% 1.2 35 0.25 Min 50 50 0.1 0.5 0.5 Typ Max Unit V V A A mA V V V k MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. * Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k -30% 0.08 0.51 0.10 80 -4.9 - 0.2 +30% 0.12 20 - 0.25 Min -50 -50 - 0.1 - 0.5 -2.0 Typ Max Unit V V A A mA V V V k MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (C) 2 SJJ00160BED XP03389 Characteristics charts of Tr1 IC VCE IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 10 250 hFE IC VCE = 10 V Ta = 75C 140 120 Ta = 25C Forward current transfer ratio hFE 200 Collector current IC (mA) 100 80 60 40 20 0 10 150 25C -25C 1 0.2 mA 100 25C 0.1 Ta = 75C -25C 0.01 50 0.1 mA 0 0 2 4 6 8 10 12 1 10 100 1 000 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 105 IO VIN VO = 5 V Ta = 25C VIN IO 100 VO = 0.2 V Ta = 25C f = 1 MHz Ta = 25C 104 Output current IO (A) 103 Input voltage VIN (V) 0.8 10 1 102 0.1 1 0 10 20 30 10 0.4 1.2 1.6 2.0 2.4 0.01 0.1 1 10 100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00160BED 3 XP03389 Characteristics charts of Tr2 IC VCE Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA -80 - 0.7 mA - 0.6 mA -60 - 0.5 mA - 0.4 mA - 0.3 mA -20 - 0.2 mA 0 0 -1 -2 -3 -4 -5 -6 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -10 IC / IB = 10 hFE IC 200 Ta = 75C VCE = -10 V -120 Forward current transfer ratio hFE -100 160 25C 120 -25C 80 Collector current IC (mA) -1 Ta = 75C 25C -25C - 0.1 -40 - 0.01 40 - 0.001 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 000 f = 1 MHz Ta = 25C -100 IO VIN VO = - 0.2 V Ta = 25C VIN IO -100 VO = -5 V Ta = 25C Output current IO (mA) 100 -10 Input voltage VIN (V) - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -10 -1 10 -1 - 0.1 1 0 -10 -20 -30 -40 - 0.1 0 - 0.01 -1 -10 -100 -1 000 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJJ00160BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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