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| S DP /B 55N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S Max ID 32A R DS (on) ( m W ) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 19 @ V G S = 4.5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol VDS VGS @ TJ=125 C ID IDM IS PD TJ, TS TG Limit 20 12 23 57 55 75 -65 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 1 2 62.5 C /W C /W S DP /B 55N02 E LE CTR ICAL CHAR ACTE R IS TICS (TC = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS b S ymbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 8V, VDS =0V VDS = VGS, ID = 250uA VGS = 4.5V, ID = 21A VDS = 10V, VGS = 10V VDS = 10V, ID = 26A Min Typ Max Unit 20 10 V uA 100 nA 0.9 1 14 40 53 1100 600 180 1.5 19 V m ohm C 4 ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS b VDS =15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGS = 10V R GE N = 6 ohm 50 62.5 200 89 18.2 ns ns ns ns nC nC nC VDS =10V, ID = 30A, VGS =4.5V 2 5.3 2.2 S DP /B 55N02 E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) 4 Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =26A Min Typ Max Unit 0.9 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 80 70 75 -55 C 60 V G S =10,9,8,7,6,5,4V ID, Drain C urrent(A) 60 50 40 30 20 10 0 0 0.5 1.0 ID, Drain C urrent (A) 45 30 25 C V G S =3V 15 T J =125 C 0 0 1 2 3 4 5 6 1.5 2.0 2.5 3.0 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 3000 F igure 2. Trans fer C haracteris tics 1.60 R DS (ON), Normalized Drain-S ource On-R es is tance 2500 1.40 1.20 1.00 0.80 0.60 ID=26A V G S =10V C , C apacitance (pF ) 2000 1500 1000 500 0 0 5 10 15 20 25 30 C is s C os s C rs s 0.40 -50 -25 0 25 50 75 100 125 150 V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S DP /B 55N02 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.06 1.04 1.02 1.00 0.98 0.96 0.94 -50 -25 ID=250uA 4 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 50 F igure 6. B reakdown V oltage V ariation with T emperature 50 gFS , T rans conductance (S ) Is , S ource-drain current (A) 40 30 20 V DS =10V 10 0 0 10 20 30 40 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 60 V G S , G ate to S ource V oltage (V ) ID, Drain C urrent (A) 8 6 4 2 0 0 3 V DS =10V ID=30A 10 RD S( ) ON L im it 1m 10 10 0m s ms 10 0 gs s DC 1 0.1 0.1 V G S =10V S ingle P ulse T c=25 C 1 10 30 60 6 9 12 15 18 21 24 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S DP /B 55N02 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ingle P uls e 0.01 0.01 1. 2. 3. 4. 1 10 100 P DM t1 t2 R cJ C (t)=r (t) * R cJ C R cJ C =S ee Datas heet T J M-T C = P * R cJ C (t) Duty C ycle, D=t1/t2 1000 10000 0.1 S quare Wave P uls e Duration (ms ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S DP /B 55N02 6 |
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