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| SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE FEATURES High Voltage : VCEO=-60V(Min.). High Current : IC(Max.)=-1A. High Transition Frequency : fT=150MHz (Typ.). Wide Area of Safe Operation. Complementary to KTC4378. D K F F D A H KTA1668 EPITAXIAL PLANAR PNP TRANSISTOR C G J B E MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP PC PC * Tj Tstg 2 1 2 3 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 RATING -80 -60 -5 -1 -2 500 1 150 -55 150 UNIT V V V A mW W 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Collector Power Dissipation Junction Temperature Storage Temperature Range Marking h FE Rank Lot No. PC* : Package mounted on ceramic substrate (250mm x0.8t) ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification O:60 120, Y:100 ) TEST CONDITION VCB=-50V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-1mA, IB=0 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz MIN. 60 30 -60 TYP. -0.2 -0.85 150 12 MAX. -100 -100 200 -0.7 -1.2 V V V MHz pF UNIT nA nA ICBO IEBO hFE(1) hFE(2) SYMBOL V(BR)CEO VCE(sat) VBE(sat) fT Cob 200 1999. 12. 22 Revision No : 2 J Type Name 1/3 KTA1668 I C - V CE COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) -1000 I B =-10mA I C - V CE -1000 mA IB = - 50 30 mA I B =-20mA I B =-10mA I B =-6mA I B =-4mA I B =-2mA -800 -600 -400 -200 0 0 -2 -4 I B =-8mA I B =-6mA I B =-4mA I B =-3mA I B =-2mA I B =-1mA I B =0mA -800 -600 -400 -200 0 IB =- I B =0mA -6 -8 -10 -12 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) h FE - I C DC CURRENT GAIN h FE 500 300 VCE =-2V COMMON EMITTER Ta=25 C C ob - V CB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 100 50 30 COMMON EMITTER f=1MHz Ta=25 C 1K 100 50 30 10 5 3 -1 -3 -5 -10 -30 -50 -100 COLLECTOR-BASE VOLTAGE V CB (V) 10 -1 -3 -10 -30 -100 -300 -1K -5K COLLECTOR CURRENT I C (mA) f T - IC TRANSITION FREQUENCY f T (MHz) 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER Ta=25 C VCE =-10V VCE(sat) - I C -1.0 COMMON EMITTER -0.5 -0.3 Ta=25 C 100 50 30 -0.1 -0.05 -0.03 IC 0 =1 /I B 10 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -0.01 -1 -3 -10 -30 -100 -300 -1K -5K COLLECTOR CURRENT I C (mA) 1999. 12. 22 Revision No : 2 2/3 KTA1668 SAFE OPERATING AREA COLLECTOR CURRENT I C (A) I CP I C MAX. DC OP P C - Ta COLLECTOR POWER DISSIPATION P C (mW) 1.2k 1k 800 600 400 200 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) (2) (1) (1) (2) Mounted on ceramic substrate (250mm 0.8t) Ta=25 C -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 1PULSE s 1m ec 1s ec 10 ms ec 10 ER c se 0m AT IO N -0.005 -0.5 -1 -3 -5 -10 -30 -50 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) 1999. 12. 22 Revision No : 2 3/3 |
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