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 DSI 30
Rectifier Diode
VRRM = 800-1600 V IF(AV)M = 30 A
TO-263 TO-263 AA
A
VRSM V 900 1300 1500 1700 Symbol IF(AV)M IFSM
VRRM V 800 1200 1400 1600
TO-220
A
C
DSI 30-08A DSI 30-12A DSI 30-14A DSI 30-16A
DSI 30-08AS DSI 30-12AS DSI 30-14AS DSI 30-16AS Maximum Ratings 30 300 330 270 300 450 460 365 380 -40...+150 150 -40...+150 A A A A A A2s A2s A2s A2s C C C
Nm
A
C (TAB)
TO-220 AC
C A C (TAB)
Conditions TC = 95C; 180 sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = 45C; VR = 0 V; TVJ = 150C; VR = 0 V;
A = Anode, C = Cathode, TAB = Cathode Features q International standard packages JEDEC TO-263 AA surface mountable q Planar passivated chips q Epoxy meets UL 94V-0 flammability classification
I2t
TVJ = 45C; VR = 0 V; TVJ = 150C; VR = 0 V;
TVJ TVJM Tstg
Md Mounting torque
TO-263 AA Outline
0.4...0.6
Weight Symbol IR VF VT0 rT RthJC Conditions TVJ = TVJM; VR = VRRM IF = 45 A; TVJ = 25C
2
g
Characteristic Values 1 1.45 0.85 13 1.0
Dim. A B C D E F G H J K L M N Q Millimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 2.54 1.15 0.64 4.83 3.56 0.38 2.04 0.64 6.85 3.42 1.77 6.35 0.89 5.33 4.82 0.56 2.49 1.39
mA V V mW K/W
For power-loss calculations only TVJ = TVJM DC current
TO-220 Outline
Min.
Inches Max.
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
Data according to IEC 60747 and refer to a single diode IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-2
033
DSI 30
50 A 40 IF 30 250 A 200 IFSM 150 103 A2s
50Hz, 80% VRRM
VR = 0 V
TVJ = 45C
It
2
TVJ = 45C
20
TVJ=150C TVJ= 25C
100
TVJ = 150C
50
TVJ = 150C
10
0 0.0
0.4
0.8 VF
1.2 V
1.6
0 0.001
102 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms10 89 t
Fig. 1 Forward current versus voltage drop per diode
60 W
Fig. 2 Surge overload current
Fig. 3 I2t versus time per diode
35 A
RthHA :
Ptot 40
1 K/W 2 K/W 3 K/W 5 K/W 7 K/W 10 K/W 15 K/W
30 IF(AV)M 25 20 15 10 5
20
0 0 10 20 Id(AV)M 30 A 0 20 40 60 80 100 120 140 C
Tamb
0 0 20 40 60 80 100 120 140 C TC
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180
1.2 K/W 1.0
ZthJC
Fig. 5 Max. forward current versus case temperature
0.8
0.6
Constants for ZthJC calculation: i Rthi (K/W) 0.01362 0.1962 0.267 0.3052 0.218 ti (s) 0.0001 0.00316 0.023 0.4 0.15
0.4
0.2
DSI30
0.0 0.001
1 2 3 4 5
0.01
0.1
1 t
s
10
Fig. 6 Transient thermal impedance junction to case
(c) 2000 IXYS All rights reserved
2-2


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