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| DSI 30 Rectifier Diode VRRM = 800-1600 V IF(AV)M = 30 A TO-263 TO-263 AA A VRSM V 900 1300 1500 1700 Symbol IF(AV)M IFSM VRRM V 800 1200 1400 1600 TO-220 A C DSI 30-08A DSI 30-12A DSI 30-14A DSI 30-16A DSI 30-08AS DSI 30-12AS DSI 30-14AS DSI 30-16AS Maximum Ratings 30 300 330 270 300 450 460 365 380 -40...+150 150 -40...+150 A A A A A A2s A2s A2s A2s C C C Nm A C (TAB) TO-220 AC C A C (TAB) Conditions TC = 95C; 180 sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 45C; VR = 0 V; TVJ = 150C; VR = 0 V; A = Anode, C = Cathode, TAB = Cathode Features q International standard packages JEDEC TO-263 AA surface mountable q Planar passivated chips q Epoxy meets UL 94V-0 flammability classification I2t TVJ = 45C; VR = 0 V; TVJ = 150C; VR = 0 V; TVJ TVJM Tstg Md Mounting torque TO-263 AA Outline 0.4...0.6 Weight Symbol IR VF VT0 rT RthJC Conditions TVJ = TVJM; VR = VRRM IF = 45 A; TVJ = 25C 2 g Characteristic Values 1 1.45 0.85 13 1.0 Dim. A B C D E F G H J K L M N Q Millimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 2.54 1.15 0.64 4.83 3.56 0.38 2.04 0.64 6.85 3.42 1.77 6.35 0.89 5.33 4.82 0.56 2.49 1.39 mA V V mW K/W For power-loss calculations only TVJ = TVJM DC current TO-220 Outline Min. Inches Max. Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 Data according to IEC 60747 and refer to a single diode IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-2 033 DSI 30 50 A 40 IF 30 250 A 200 IFSM 150 103 A2s 50Hz, 80% VRRM VR = 0 V TVJ = 45C It 2 TVJ = 45C 20 TVJ=150C TVJ= 25C 100 TVJ = 150C 50 TVJ = 150C 10 0 0.0 0.4 0.8 VF 1.2 V 1.6 0 0.001 102 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms10 89 t Fig. 1 Forward current versus voltage drop per diode 60 W Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 35 A RthHA : Ptot 40 1 K/W 2 K/W 3 K/W 5 K/W 7 K/W 10 K/W 15 K/W 30 IF(AV)M 25 20 15 10 5 20 0 0 10 20 Id(AV)M 30 A 0 20 40 60 80 100 120 140 C Tamb 0 0 20 40 60 80 100 120 140 C TC Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180 1.2 K/W 1.0 ZthJC Fig. 5 Max. forward current versus case temperature 0.8 0.6 Constants for ZthJC calculation: i Rthi (K/W) 0.01362 0.1962 0.267 0.3052 0.218 ti (s) 0.0001 0.00316 0.023 0.4 0.15 0.4 0.2 DSI30 0.0 0.001 1 2 3 4 5 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case (c) 2000 IXYS All rights reserved 2-2 |
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