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| IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I II I III I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III I I III II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II II II IIIIIIIIIIIIIIIIIIIIIII I II II II IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I II II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII * * * * (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred devices are Motorola recommended choices for future use and best overall value. PD, POWER DISSIPATION (WATTS) . . . for general-purpose power amplifier and switching applications. Complementary Silicon High-Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS Junction-To-Free-Air Thermal Resistance Thermal Resistance, Junction to Case Unclamped Inductive Load Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current -- Continuous Collector Current -- Continuous Peak (1) Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage 25 A Collector Current Low Leakage Current -- ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain -- hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product -- hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz Characteristic Rating 100 125 50 25 75 0 0 Symbol TJ, Tstg VCEO VCB ESB VEB PD IC IB 25 v 10%. Symbol RJC RJA TIP35A TIP36A Figure 1. Power Derating 60 V 60 V 50 75 125 100 TC, CASE TEMPERATURE (C) - 65 to + 150 TIP35B TIP36B 80 V 80 V 125 1.0 5.0 5.0 90 25 40 35.7 Max 1.0 TIP35C TIP36C 100 V 100 V _C/W _C/W Watts W/_C Unit Unit Adc Adc Vdc Vdc Vdc mJ _C 150 175 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 125 WATTS *Motorola Preferred Device TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* CASE 340D-01 TO-218AC Order this document by TIP35A/D NPN 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C (1) Pulse Test: Pulse Width = 300 s, Duty Cycle ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) Base-Emitter On Voltage (IC = 15 A, VCE = 4.0 V) (IC = 25 A, VCE = 4.0 V) Collector-Emitter Saturation Voltage (IC = 15 A, IB = 1.5 A) (IC = 25 A, IB = 5.0 A) DC Current Gain (IC = 1.5 A, VCE = 4.0 V) (IC = 15 A, VCE = 4.0 V) Emitter-Base Cutoff Current (VEB = 5.0 V, IC = 0) Collector-Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) Collector-Emitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) 2 + 2.0 V 0 tr 20 ns -11.0 V FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. Figure 2. Switching Time Equivalent Test Circuits t, TIME ( s) TURN-OFF TIME TURN-ON TIME 0 10 TO 100 S DUTY CYCLE 2.0% tr 20 ns 10 to 100 s DUTY CYCLE 2.0% -11.0 V + 9.0 V Characteristic RB 10 VBB RB 10 TIP35A, TIP36A TIP35B, TIP36B TIP35C, TIP36C TIP35A, TIP36A TIP35B, TIP35C, TIP36B, TIP36C + 4.0 V v 2.0%. VCC VCC RL RL 3.0 3.0 - 30 V - 30 V TO SCOPE tr 20 ns TO SCOPE tr 20 ns 0.03 0.02 0.3 0.07 0.05 0.1 0.3 0.7 0.5 2.0 1.0 0.2 Motorola Bipolar Power Transistor Device Data 2.0 3.0 0.5 0.7 1.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICES hFE hfe fT td tr TJ = 25C IC/IB = 10 VCC = 30 V VBE(off) = 2 V Min 60 80 100 3.0 25 25 15 -- -- -- -- -- -- -- -- Max 2.0 4.0 1.8 4.0 1.0 0.7 1.0 1.0 -- 75 -- -- -- -- -- Figure 3. Turn-On Time (PNP) (NPN) 20 MHz Unit Vdc Vdc Vdc mA mA mA -- -- 30 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C 10 7.0 5.0 3.0 2.0 t, TIME ( s) 1.0 0.7 0.5 0.3 0.2 0.1 0.3 0.5 0.7 tf ts tf 1000 (PNP) (NPN) ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 500 200 hFE , DC CURRENT GAIN 100 50 20 10 5.0 2.0 1.0 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) 50 100 PNP NPN VCE = 4.0 V TJ = 25C Figure 4. Turn-Off Time Figure 5. DC Current Gain FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. IC, COLLECTOR CURRENT (AMPS) 100 50 30 20 10 10 ms 5.0 2.0 1.0 0.5 0.3 0.2 0 1.0 dc SECONDARY BREAKDOWN THERMAL LIMIT BONDING WIRE LIMIT TIP35A, 36A TIP35B, 36B TIP35C, 36C 20 30 50 70 100 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 s 1.0 ms TC = 25C w REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics. Figure 6. Maximum Rated Forward Bias Safe Operating Area 40 IC, COLLECTOR CURRENT (AMPS) 30 25 20 15 10 5.0 0 0 10 TIP35A TIP36A 40 60 80 20 30 50 70 90 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 TIP35B TIP36B TIP35C TIP36C TJ 100C Figure 7. Maximum Rated Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C TEST CIRCUIT VCE MONITOR L1 (SEE NOTE A) MJE180 INPUT 50 RBB1 20 L2 (SEE NOTE A) 50 RBB2 = 100 VCC = 10 V + VBB2 = 0 - VBB1 = 10 V + RS = 0.1 IC MONITOR - TUT VOLTAGE AND CURRENT WAVEFORMS tw = 6.0 ms (SEE NOTE B) 5.0 V INPUT VOLTAGE 0 100 ms 0 COLLECTOR CURRENT - 3.0 A 0 -10 V COLLECTOR VOLTAGE V(BR)CER NOTES: A. L1 and L2 are 10 mH, 0.11 , Chicago Standard Transformer Corporation C-2688, or equivalent. B. Input pulse width is increased until ICM = - 3.0 A. C. For NPN, reverse all polarities. Figure 8. Inductive Load Switching 4 Motorola Bipolar Power Transistor Device Data TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C PACKAGE DIMENSIONS C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078 U S K L 1 2 4 A 3 DIM A B C D E G H J K L Q S U V D V G J H STYLE 1: PIN 1. 2. 3. 4. CASE 340D-01 TO-218AC ISSUE A Motorola Bipolar Power Transistor Device Data 5 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *TIP35A/D* TIP35A/D |
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