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| 2SK3451-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Ratings 600 13 52 30 13 216.7 20 5 2.16 80 +150 Operating and storage Tch -55 to +150 temperature range Tstg Isolation Voltage VISO *4 2 < *1 L=2.36mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch=150C < < < *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 t=60sec, f=60Hz Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt dV/dt *3 PD Ta=25C Tc=25C Unit V A A V A mJ kV/s kV/s W C C kVrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 VCC=300V ID=12A VGS=10V L=2.36mH Tch=25C IF=12A VGS=0V Tch=25C IF=12A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 600 3.0 Typ. Max. 5.0 25 250 100 0.65 Units V V A nA S pF 10 0.50 5.5 11 1600 2400 160 240 7 10.5 18 27 16 24 35 50 8 15 34 51 12.5 19 11.5 17.5 13 1.00 1.50 0.75 6.5 ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.56 58.0 Units C/W C/W 1 2SK3451-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 90 80 70 60 50 40 30 500 450 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V IAS=6A 400 350 300 IAS=8A EAS [mJ] 0 25 50 75 100 125 150 PD [W] 250 200 150 IAS=13A 20 10 0 100 50 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 30 28 26 24 22 20 20V 10V 8V 7.5V Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 10 ID [A] 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 VGS=6.5V 7.0V ID[A] 1 0.1 0 18 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 1.4 1.3 1.2 1.1 1.0 10 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C VGS=6.5V 7.0V RDS(on) [ ] 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 7.5V 8V 10V 20V gfs [S] 1 0.1 0.1 1 10 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 ID [A] ID [A] 2 2SK3451-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 2.0 1.8 1.6 1.4 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA max. 5.0 VGS(th) [V] RDS(on) [ ] 4.5 4.0 3.5 3.0 min. 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 max. typ. 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=12A, Tch=25C 24 22 20 18 300V 16 14 480V Vcc= 120V 1n 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss VGS [V] C [F] 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 100p Coss 10p Crss 1p 10 -1 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10 10 10 2 tr td(off) IF [A] t [ns] td(on) 10 1 tf 1 10 0.1 0.00 0 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 1 ID [A] 3 2SK3451-01MR Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 FUJI POWER MOSFET 10 1 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 10 2 Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=60V Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -2 10-8 10-7 10-6 10-5 10-4 10-3 10-2 tAV [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
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