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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF897/D NPN Silicon RF Power Transistor Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800- 970 MHz. * Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Minimum Gain = 10 dB @ 900 MHz, class-AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP) Maximum Intermodulation Distortion -30 dBc @ 30 Watts (PEP) * Characterized with Series Equivalent Large-Signal Parameters from 800 to 960 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power * Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal- Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF897 30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON CASE 395B-01, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 30 60 4.0 4.0 105 0.60 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C THERMAL CHARACTERISTICS Max 1.67 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICES hFE Cob 30 60 4.0 -- 33 80 4.7 -- -- -- -- 10.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc) 30 80 120 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) 14 21 28 pF (continued) REV 6 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF897 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit FUNCTIONAL CHARACTERISTICS Common-Emitter Amplifier Power Gain (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) Intermodulation Distortion (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) Output Mismatch Stress (VCC = 26 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles)) Gpe 10.0 12.0 -- dB 35 38 -- % IMD -- -37 -30 dBc No Degradation in Output Power Before and After Test Q1 R1 VBB C11 + C13 + C18 VCC L5 R5 C21 + COAX 1 R3 C4 L3 C6 B3 B1 C16 TL3 L1 TL2 INPUT TL1 C1 C3 L2 TL4 BALUN 1 C5 R2 VBB Q2 + C12 C14 + C19 B2 R4 C9 C17 L4 L6 + C7 R6 C22 B4 L8 TL10 TL5 C2 C10 TL6 D.U.T. TL8 C15 C8 L7 TL7 C23 C20 C24 TL9 BALUN 2 OUTPUT TL11 COAX 2 VCC B1, B2, B3, B4 -- Ferrite Bead, Fair Rite #2743019447 C1 -- 0.8 - 8.0 pF Trimmer Capacitor, Johanson C2, C3, C23, C24 -- 43 pF, 100 mil, ATC Chip Capacitor C4, C5, C18, C19, C21, C22 -- 820 pF, 100 mil, Chip Capacitor, Kemet C6, C7, C11, C12 -- 10 F, Lytic Capacitor, Panasonic C8, C9, C16, C17 -- 100 pF, 100 mil, Chip Capacitor, Murata Erie C10 -- 13 pF, 50 mil, ATC Chip Capacitor C13, C14 -- 250 F Lytic Capacitor, Mallory C15 -- 1.1 pF, 50 mil, ATC Chip Capacitor C20 -- 6.8 pF, 100 mil, ATC Chip Capacitor L1, L2, L3, L4, L5, L6 -- 5 Turns 20 AWG, IDIA 0.126 choke N1, N2 -- Type N Flange Mount, Omni Spectra 3052-1648-10 Q1 -- Bias Transistor BD136 PNP R1, R12 -- 39 Ohm, 2.0 W R3, R4, R5, R6 -- 4.0 x 39 Ohm, 1/8 W, Chips in Parallel, R3, R4, R5, R6 -- Rohm 390-J TL1 - TL11 -- See Photomaster Balun1, Balun2, Coax 1, Coax 2 -- 2.20 50 Ohm, 0.088 o.d. Balun1, Balun2, Coax 1, Coax 2 -- semi-rigid coax, Micro Coax Balun1, Balun2, Coax 1, Coax 2 -- UT-85-M17 Board -- 1/32 Glass Teflon, Arlon GX-0300-55-22, r = 2.55 Figure 1. MRF897 Broadband Test Circuit MRF897 2 MOTOROLA RF DEVICE DATA 45 40 f = 800 MHz P , OUTPUT POWER (WATTS) o 35 30 25 960 MHz 20 15 10 5 0 0.0 0.5 VCC = 24 Vdc Icq = 125 mA 900 MHz P , OUTPUT POWER (WATTS) o 45 40 35 30 25 20 15 10 5 2.5 3.0 0 800 VCC = 24 Vdc Icq = 125 mA 820 840 860 880 900 f, FREQUENCY (MHz) 920 940 960 0.5 W 1.5 W 1W PIN = 3 W 2.5 W 2W 1.0 1.5 2.0 PIN, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 40 P , OUTPUT POWER (WATTS) o 35 30 25 20 15 10 5 0 14 16 18 PIN = 2.5 W IMD, INTERMODULATION DISTORTION (dBc) 45 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 0 5 f1 = 900 MHz f2 = 900.1 MHz VCC = 24 Vdc Icq = 125 mA 15 10 20 25 Po, OUTPUT POWER (WATTS-PEP) 30 35 5TH 7TH 3RD ORDER 1.5 W 0.5 W f = 900 MHz Icq = 125 mA 20 22 24 26 VCC, SUPPLY VOLTAGE (VOLTS) 28 30 Figure 4. Output Power versus Supply Voltage Figure 5. Intermodulation versus Output Power 14.0 13.5 G PE, POWER GAIN (dB) 13.0 12.5 12.0 11.5 11.0 10.5 10.0 9.5 9.0 0.01 0.1 1 125 mA f = 900 MHz VCC = 24 Vdc Icq = 125 mA 10 Po, OUTPUT POWER, (WATTS) Icq = 400 mA 300 mA 250 mA 200 mA 12 GPE 11 GPE , POWER GAIN (dB) 10 9 8 7 6 840 POUT = 30 W (PEP) VCC = 24 Vdc Icq = 125 mA 850 INPUT VSWR 50 45 40 35 30 25 20 900 , EFFICIENCY (%) 1.0 1.5 2.0 INPUT VSWR 860 870 880 f, FREQUENCY (MHz) 890 Figure 6. Power Gain versus Output Power Figure 7. Broadband Test Fixture Performance MOTOROLA RF DEVICE DATA MRF897 3 f MHz 800 850 900 960 Zin Ohms 1.0 + j10.3 1.5 + j10.5 1.8 + j11.0 2.2 + j11.4 ZOL* Ohms 5.9 - j0.4 5.7 + j2.6 5.9 + j3.4 6.2 + j4.4 f = 800 MHz 850 Zin 900 960 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. 960 900 850 ZOL* Zo = 10 Ohms f = 800 MHz NOTE: Zin & ZOL* are given from base-to-base and collector-to-collector respectively. Po = 300 W (PEP), VCC = 24 V Figure 8. Series Equivalent Input/Output Impedances MRF897 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS -A- U Q 2 PL 0.51 (0.020) M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K N Q U INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.055 0.065 0.055 0.070 0.110 0.130 0.079 0.091 0.003 0.005 0.180 0.220 0.315 0.330 0.125 0.135 0.560 BSC MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 1.40 1.65 1.40 1.78 2.79 3.30 2.01 2.31 0.08 0.13 4.57 5.59 8.00 8.38 3.18 3.42 14.22 BSC 1 3 2 -B- 4 5 K G D J H N E C -T- SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. BASE BASE COLLECTOR COLLECTOR EMITTER CASE 395B-01 ISSUE A MOTOROLA RF DEVICE DATA MRF897 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF897 6 *MRF897/D* MRF897/D MOTOROLA RF DEVICE DATA |
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