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0.5 CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX ADG836 FEATURES 0.5 Typical On Resistance 0.8 Maximum On Resistance at 125C 1.65 V to 3.6 V Operation Automotive Temperature Range: -40C to +125C High Current Carrying Capability: 300 mA Continuous Rail-to-Rail Switching Operation Fast Switching Times <20 ns Typical Power Consumption (<0.1 W) APPLICATIONS Cellular Phones PDAs MP3 Players Power Routing Battery-Powered Systems PCMCIA Cards Modems Audio and Video Signal Routing Communication Systems GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM PRODUCT HIGHLIGHTS The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V supply operation. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. The ADG836 exhibits break-before-make switching action. The ADG836 is available in 10-lead MSOP and 3 mm 3 mm 12-lead LFCSP packages. 1. <0.8 over full temperature range of -40C to +125C. 2. Single 1.65 V to 3.6 V operation. 3. Compatible with 1.8 V CMOS logic. 4. High current handling capability (300 mA continuous current at 3.3 V). 5. Low THD + N (0.02% typ). 6. 3 mm 3 mm LFCSP package and 10-lead MSOP package. REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. One Technology Way, P Box 9106, Norwood, MA 02062-9106, U.S.A. .O. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) 2003 Analog Devices, Inc. All rights reserved. ADG836-SPECIFICATIONS1(V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tON tOFF Break-before-Make Time Delay (tBBM) Charge Injection Off Isolation Channel-to-Channel Crosstalk 2 DD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.) -40C to +125C 0 V to VDD +25C -40C to +85C Unit V Test Conditions/Comments VDD = 2.7 V VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA; Test Circuit 1 VDD = 2.7 V, VS = 0.65 V, IS = 10 mA VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA VDD = 3.6 V VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; Test Circuit 2 VS = VD = 0.6 V or 3.3 V; Test Circuit 3 0.5 0.65 0.04 0.1 0.75 0.075 0.15 0.8 0.08 0.16 typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ 0.2 1 0.2 1 10 15 100 120 2 0.8 0.005 0.1 4 21 26 4 7 17 40 -67 -90 VIN = VINL or VINH 28 8 29 9 5 -67 dB typ Total Harmonic Distortion (THD + N) Insertion Loss -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.02 -0.05 57 25 75 0.003 1 4 % dB typ MHz typ pF typ pF typ A typ A max RL = 50 , CL = 35 pF VS = 1.5 V/0 V; Test Circuit 4 RL = 50 , CL = 35 pF VS = 1.5 V; Test Circuit 4 RL = 50 , CL = 35 pF VS1 = VS2 = 1.5 V; Test Circuit 5 VS = 1.5 V, RS = 0 , CL = 1 nF; Test Circuit 6 RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 7 S1A-S2A/S1B-S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 10 S1A-S1B/S2A-S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 9 RL = 32 , f = 20 Hz to 20 kHz, VS = 2 V p-p RL = 50 , CL = 5 pF; Test Circuit 8 RL = 50 , CL = 5 pF; Test Circuit 8 VDD = 3.6 V Digital Inputs = 0 V or 3.6 V NOTES 1 Temperature range is as follows: Y version: -40C to +125C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. -2- REV. 0 ADG836 SPECIFICATIONS1 (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tON tOFF Break-before-Make Time Delay (tBBM) Charge Injection Off Isolation Channel-to-Channel Crosstalk 2 DD = 2.5 V 0.2 V, GND = 0 V, unless otherwise noted.) +25C -40C to +85C -40C to +125C 0 V to VDD 0.8 0.08 0.16 0.23 0.2 0.4 0.2 0.6 0.24 0.88 0.085 Unit V Test Conditions/Comments 0.65 0.72 0.04 typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA; Test Circuit 1 VDD = 2.3 V, VS = 0.7 V; IS = 10 mA VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA VDD = 2.7 V VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Test Circuit 2 VS = VD = 0.6 V or 2.4 V; Test Circuit 3 4 12 45 90 1.7 0.7 0.005 0.1 4 23 29 5 7 17 30 -67 -90 VIN = VINL or VINH 30 8 31 9 5 -67 dB typ Total Harmonic Distortion (THD + N) Insertion Loss -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.022 -0.06 57 25 75 0.003 1.0 4.0 % dB typ MHz typ pF typ pF typ A typ A max RL = 50 , CL = 35 pF VS = 1.5 V/0 V; Test Circuit 4 RL = 50 , CL = 35 pF VS = 1.5 V; Test Circuit 4 RL = 50 , CL = 35 pF VS1 = VS2 = 1.5 V; Test Circuit 5 VS = 1.25 V, RS = 0 , CL = 1 nF; Test Circuit 6 RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 7 S1A-S2A/S1B-S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 10 S1A-S1B/S2A-S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 9 RL = 32 , f = 20 Hz to 20 kHz, VS = 1.5 V p-p RL = 50 , CL = 5 pF; Test Circuit 8 RL = 50 , CL = 5 pF; Test Circuit 8 VDD = 2.7 V Digital Inputs = 0 V or 2.7 V NOTES 1 Temperature range is as follows: Y version: -40C to +125C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. 0 -3- ADG836 SPECIFICATIONS1(V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (RON) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON tOFF Break-before-Make Time Delay (tBBM) Charge Injection Off Isolation Channel-to-Channel Crosstalk DD = 1.65 V to 1.95 V, GND = 0 V, unless otherwise noted.) +25C -40C to +85C -40C to +125C 0 V to VDD 2.2 4 2.2 4 Unit V Test Conditions/Comments 1 1.4 2 0.1 typ max max typ VDD = 1.8 V, VS = 0 V to VDD, IS = 10 mA; Test Circuit 1 VDD = 1.65 V, VS = 0 V to VDD, IS = 10 mA VDD = 1.65 V, VS = 0.7 V, IS = 10 mA VDD = 1.95 V VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V; Test Circuit 2 VS = VD = 0.6 V or 1.65 V; Test Circuit 3 0.2 0.4 0.2 0.6 4 10 25 75 0.65 VDD 0.35 VDD nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ 0.005 0.1 4 28 37 7 9 21 20 -67 -90 VIN = VINL or VINH 38 10 39 11 5 -67 dB typ Total Harmonic Distortion, THD Insertion Loss -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.14 -0.08 57 25 75 0.003 1.0 4 % dB typ MHz typ pF typ pF typ A typ A max RL = 50 , CL = 35 pF VS = 1.5 V/0 V; Test Circuit 4 RL = 50 , CL = 35 pF VS = 1.5 V/0 V; Test Circuit 4 RL = 50 , CL = 35 pF VS1 = VS2 = 1 V; Test Circuit 5 VS = 1 V, RS = 0 , CL = 1 nF; Test Circuit 6 RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 7 S1A-S2A/S1B-S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 10 S1A-S1B/S2A-S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 9 RL = 32 , f = 20 Hz to 20 kHz, VS = 1.2 V p-p RL = 50 , CL = 5 pF; Test Circuit 8 RL = 50 , CL = 5 pF; Test Circuit 8 VDD = 1.95 V Digital Inputs = 0 V or 1.95 V NOTES 1 Temperature range is as follows: Y version: -40C to +125C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. -4- REV. 0 ADG836 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C, unless otherwise noted.) Table I. ADG836 Truth Table VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +4.6 V Analog Inputs2 . . . . . . . . . . . . . . . . . . . . . -0.3 V to VDD + 0.3 V Digital Inputs2 . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to 4.6 V or 10 mA, Whichever Occurs First Peak Current, S or D 3.3 V Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA 2.5 V Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 460 mA 1.8 V Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420 mA (Pulsed at 1ms, 10% Duty Cycle Max) Continuous Current, S or D 3.3 V Operation 300 mA 2.5 V Operation 275 mA 1.8 V Operation 250 mA Operating Temperature Range Automotive (Y Version) . . . . . . . . . . . . . . . . -40C to +125C Storage Temperature Range . . . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . .150C MSOP Package JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 206C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . 44C/W LFCSP Package JA Thermal Impedance (3-Layer Board) . . . . . . . . . 61.1C/W IR Reflow, Peak Temperature <20 sec . . . . . . . . . . . . . . . .235C NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. Logic 0 1 Switch A Off On Switch B On Off ORDERING GUIDE Model ADG836YRM ADG836YRM-REEL ADG836YRM-REEL7 ADG836YCP ADG836YCP-REEL ADG836YCP-REEL7 Temperature Range -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C Package Description Mini Small Outline Package (MSOP) Mini Small Outline Package (MSOP) Mini Small Outline Package (MSOP) Lead Frame Chip Scale Package (LFCSP) Lead Frame Chip Scale Package (LFCSP) Lead Frame Chip Scale Package (LFCSP) Package Option RM-10 RM-10 RM-10 CP-12 CP-12 CP-12 Branding* S9A S9A S9A S9A S9A S9A *Branding on this package is limited to three characters due to space constraints. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG836 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. REV. 0 -5- ADG836 PIN CONFIGURATIONS 10-Lead MSOP (RM-10) 12-Lead LFCSP (CP-12) TERMINOLOGY VDD IDD GND S D IN VD (VS) RON RFLAT (ON) RON IS (OFF) ID (OFF) ID, IS (ON) VINL VINH IINL (IINH) CS (OFF) CD (OFF) CD, CS (ON) CIN tON tOFF tBBM Charge Injection Off Isolation Crosstalk -3 dB Bandwidth On Response Insertion Loss THD + N Most positive power supply potential. Positive supply current. Ground (0 V) reference. Source terminal. May be an input or output. Drain terminal. May be an input or output. Logic control input. Analog voltage on terminals D, S. Ohmic resistance between D and S. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. On resistance match between any two channels. Source leakage current with the switch off. Drain leakage current with the switch off. Channel leakage current with the switch on. Maximum input voltage for Logic 0. Minimum input voltage for Logic 1. Input current of the digital input. Off switch source capacitance. Measured with reference to ground. Off switch drain capacitance. Measured with reference to ground. On switch capacitance. Measured with reference to ground. Digital input capacitance. Delay time between the 50% and the 90% points of the digital input and switch on condition. Delay time between the 50% and the 90% points of the digital input and switch off condition. On or off time measured between the 80% points of both switches when switching from one to another. A measure of the glitch impulse transferred from the digital input to the analog output during on-off switching. A measure of unwanted signal coupling through an off switch. A measure of unwanted signal which is coupled through from one channel to another as a result of parasitic capacitance. The frequency at which the output is attenuated by 3 dB. The frequency response of the on switch. The loss due to the on resistance of the switch. The ratio of the harmonics amplitude plus noise of a signal, to the fundamental. -6- REV. 0 Typical Performance Characteristics-ADG836 0.60 TA = 25C 0.55 0.50 ON RESISTANCE () 0.45 0.40 0.35 0.30 0.25 0.20 0.2 VDD = 3.6V VDD = 3.3V VDD = 3V VDD = 2.7V ON RESISTANCE () 1.0 1.2 VDD = 3.3V 0.8 +125C +85C 0.6 0.4 +25C -40C 0 0.5 1.0 1.5 2.0 VD, VS (V) 2.5 3.0 3.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VD, VS (V) TPC 1. On Resistance vs. VD (VS) VDD = 2.7 V to 3.6 V TPC 4. On Resistance vs. VD (VS) for Different Temperatures, 3.3 V 1.2 VDD = 2.5V 0.8 TA = 25C 0.7 VDD = 2.3V ON RESISTANCE () 1.0 +125C 0.8 +85C 0.6 +25C -40C 0.2 ON RESISTANCE () 0.6 0.5 VDD = 2.5V VDD = 2.7V 0.4 0.4 0.3 0.2 0 0.5 1.0 1.5 VD, VS (V) 2.0 2.5 0 0 0.5 1.0 1.5 VD, VS (V) 2.0 2.5 TPC 2. On Resistance vs. VD (VS) VDD = 2.5 V 0.2 V TPC 5. On Resistance vs. VD (VS) for Different Temperature, 2.5 V 1.4 VDD = 1.8V 1.2 +125C ON RESISTANCE () 1.0 0.8 0.7 0.5 0.2 0 +85C 1.8 TA = 25C 1.6 1.4 ON RESISTANCE () 1.2 VDD = 1.8V 1.0 0.8 0.6 0.4 0.2 VDD = 1.65V -40C +25C VDD = 1.95V 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VD, VS (V) VD, VS (V) TPC 3. On Resistance vs. VD (VS), VDD = 1.8 V 0.15 V TPC 6. On Resistance vs. VD (VS) for Different Temperatures, 1.8 V REV. 0 -7- ADG836 80 VDD = 3.3V 60 ID, IS (ON) 40 20 0 -20 IS (OFF) -40 -60 -80 30 20 10 0 20 40 60 80 100 120 0 90 80 70 60 50 40 TA = 25C VCC = 3.3V VCC = 2.5V VCC = 1.8V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TPC 7. Leakage Currents vs. Temperature, 3.3 V 60 50 40 30 CURRENT (nA) 20 10 0 -10 -20 -30 -40 0 20 40 60 80 100 120 IS (OFF) ID, IS (ON) TPC 10. Charge Injection vs. Source Voltage VDD = 2.5V TEMPERATURE (C) TPC 8. Leakage Current vs. Temperature, 2.5 V 50 40 30 CURRENT (nA) IS, ID (ON) 20 10 0 -10 -20 IS (OFF) ATTENUATION (dB) TPC 11. tON/tOFF Times vs. Temperature TA = 25C VCC = 3.3V/2.5V/1.8V VDD = 1.8V 0 20 40 60 80 100 120 TEMPERATURE (C) TPC 9. Leakage Current vs. Temperature, 1.8 V TPC 12. Bandwidth -8- REV. 0 ADG836 0 -10 -20 ATTENUATION (dB) -30 -40 -50 -60 -70 -80 0 20 TA = 25C VCC = 3.3V/2.5V/1.8V THD + N (%) 0.06 0.10 VDD = 2.5V TA = 25C S1A-D1 32 LOAD 0.08 1.5V p-p 0.04 0.02 50 100 200 500 1k 2k 5k 10k 20k FREQUENCY (Hz) TPC 13. Off Isolation vs. Frequency TPC 15. Total Harmonic Distortion + Noise -10 -20 -30 ATTENUATION (dB) -40 -50 -60 -70 -80 -90 -100 TA = 25C VCC = 3.3V/2.5V/1.8V TPC 14. Crosstalk vs. Frequency REV. 0 -9- ADG836 Test Circuits Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage Test Circuit 4. Switching Times, tON, tOFF Test Circuit 5. Break-before-Make Time Delay, tBBM Test Circuit 6. Charge Injection -10- REV. 0 ADG836 Test Circuit 7. Off Isolation Test Circuit 9. Channel-to-Channel Crosstalk (S1A-S1B) Test Circuit 8. Bandwidth Test Circuit 10. Channel-to-Channel Crosstalk (S1A-S2A) REV. 0 -11- ADG836 OUTLINE DIMENSIONS 10-Lead Mini Small Outline Package [MSOP] (RM-10) Dimensions shown in millimeters C04308-0-8/03(0) 0.23 0.08 8 0 0.80 0.60 0.40 0.60 MAX 0.45 PIN 1 INDICATOR TOP VIEW 3.00 BSC 10 6 3.00 BSC 1 5 4.90 BSC PIN 1 0.50 BSC 0.95 0.85 0.75 0.15 0.00 0.27 0.17 1.10 MAX SEATING PLANE COPLANARITY 0.10 COMPLIANT TO JEDEC STANDARDS MO-187BA 12-Lead Lead Frame Chip Scale Package [LFCSP] (CP-12) Dimensions shown in millimeters 0.75 0.55 0.35 3.00 BSC SQ PIN 1 INDICATOR 1.45 1.30 SQ* 1.15 9 8 7 10 11 12 1 2 3 2.75 BSC SQ BOTTOM VIEW 6 5 4 12 MAX 1.00 0.85 0.80 SEATING PLANE 0.30 0.23 0.18 0.80 MAX 0.65 TYP 0.05 MAX 0.02 NOM 0.20 REF 0.50 BSC 0.25 MIN COPLANARITY 0.08 *COMPLIANT TO JEDEC STANDARDS MO-220-VEED-1 EXCEPT FOR EXPOSED PAD DIMENSION -12- REV. 0 |
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