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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 90 Volt VDS * Low input capacitance * Fast switching ZVN1409A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 90 10 40 20 625 -55 to +150 UNIT V mA mA V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate Body Leakage Zero Gate Voltage Drain Current On State Drain Current (1) Static Drain Source On State Resistance (1) SYMBOL BV DSS V GS(th) I GSS I DSS MIN. 90 0.8 2.4 100 MAX. UNIT V V nA CONDITIONS. I D=0.1mA, V GS=0V ID=0.1mA, V DS= V GS V GS= 20V, V DS=0V V DS=90V, V GS=0V V DS=72V, V GS=0V, T=125C V DS=25 V, V GS=10V V GS=10V,I D=5mA V DS=25V,I D=10mA 1 A 100 (2) A 10 250 2 6.5 3 0.65 0.3 0.5 0.35 0.5 mA mS pF pF pF ns ns ns ns I D(on) R DS(on) Forward Transconductance (1)( g fs 2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3)(4) Rise Time (2)(3)(4) Turn-Off Delay Time (2)(3)(4) Fall Time (2)(3)(4) C iss C oss C rss t d(on) tr t d(off) tf V DS=25 V, V GS=0V f=1MHz V DD 25V, I D=5mA 3-358 ( 1 ZVN1409A TYPICAL CHARACTERISTICS 70 60 VGS= 10V 8V 40 30 20 10 6V 5V 4V 3V 0 0 10 20 30 40 50 0 2 4 6 8 10 50 VGS= 10V 8V ID-Drain Current (mA) 50 ID-Drain Current (mA) 40 30 6V 5V 4V 3V 20 10 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 10 50 VDS-Drain Source Voltage (Volts) ID-Drain Current (mA) 8 40 VDS= 10V 6 30 20 10 4 ID= 24mA 18mA 12mA 2 0 2 4 6 8 10 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics Transfer Characteristics VGS=4V 5V 6V 8V 10V 2.4 RDS-Drain Source Resistance () 1000 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -80 -60 -40 -20 500 r ou -S in ra D R ce an ist VGS=10V es R ID=5mA ce VGS=VDS ID=1mA n) (o DS Gate Thresh old Voltage VG S(t h) 100 1 10 100 0 20 40 60 80 100 120 140 160 ID-Drain Current (mA) Tj-Junction Temperature (C) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3-359 ZVN1409A TYPICAL CHARACTERISTICS 10 10 gfs-Transconductance (mS) gfs-Transconductance (mS) 8 6 4 2 0 0 10 20 30 40 50 VDS=10V 8 6 4 2 0 0 2 4 6 VDS=10V 8 10 ID(on)- Drain Current (mA) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage 16 VGS-Gate Source Voltage (Volts) 10 8 6 4 2 0 0 10 20 30 40 50 Crss 14 12 10 8 6 4 2 0 0 ID=25mA VDS= 30V 60V 90V C-Capacitance (pF) Coss Ciss 0.1 0.2 0.3 0.4 0.5 0.6 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-360 |
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