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FDZ204P
January 2002
FDZ204P
P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET
General Description
Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ204P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
Features
* -4.5 A, -20 V. RDS(ON) = 45 m @ V GS = -4.5 V RDS(ON) = 75 m @ V GS = -2.5 V * Occupies only 3.7 mm2 of PCB area. Less than 40% of the area of a SSOT-6 * Ultra-thin package: less than 0.70 mm height when mounted to PCB * Ultra-low Qg x RDS(ON) figure-of-merit. * High power and current handling capability.
Applications
* Battery management * Load switch * Battery protection
D
D
D
Pin 1
S
F204P
S
S
S
G
G
S
S
Bottom
Top
TA=25oC unless otherwise noted
D
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD TJ , TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range
Ratings
-20 12 -4.5 -20 1.8 -55 to +150
Units
V V A W C
Thermal Characteristics
RJA RJB RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1) (Note 1)
67 11 1
C/W C/W C/W
Package Marking and Ordering Information
Device Marking 204P Device FDZ204P Reel Size 7'' Tape width 8mm Quantity 3000 units
(c)2002 Fairchild Semiconductor Corporation
FDZ204P Rev. C(W)
FDZ204P
Electrical Characteristics
Symbol
BV DSS BVDSS TJ IDSS IGSSF IGSSR V GS(th) VGS(th) TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
V GS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C V DS = -16 V, V GS = 0 V V GS = -12 V, V DS = 0 V V GS = 12 V, V DS = 0 V V DS = V GS , ID = -250 A ID = -250 A, Referenced to 25C V GS = -4.5 V, ID = -4.5 A V GS = -2.5 V, ID = -3.5 A V GS = -4.5 V, ID = -4.5A,TJ =125C V GS = -4.5 V, V DS = -5 .0 V V DS = -5 V, ID = -4.5 A V DS = -10 V, f = 1.0 MHz V GS = 0 V,
Min
-20
Typ
Max Units
V mV/C -1 -100 100 A nA nA V mV/C m
Off Characteristics
-17
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
-0.6
-0.9 3 37 57 50
-1.5
45 75 65
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS V SD trr Qrr
Notes: 1.
-20 15 884 258 103 12 9 36 24 9 2 3 22 18 58 38 13
A S pF pF pF ns ns ns ns nC nC nC A V nS nC
Dynamic Characteristics
Switching Characteristics (Note 2)
V DD = -6 V, V GS = -4.5 V, ID = -1 A, RGEN = 6
V DS = -10 V, V GS = -4.5 V
ID = -4.5 A,
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = -1.5 A Voltage Diode Reverse Recovery Time IF = -5.5 A, Diode Reverse Recovery Charge diF/dt = 100 A/s
(Note 2)
-0.76 25 26
-1.5 -1.2
RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design.
a)
67 C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
b)
155 C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDZ204P Rev. C (W)
FDZ204P
Dimensional Outline and Pad Layout
SYMM C L
1 A 2 3
2.15 1.85 INDEX SLOT C L
O 0.40
G S D
S S D
S S
0.65 1.30
F204
SEATING PLANE
TOP VIEW
Date/vendor Code
B
2.06 1.66
C
D
0.65 1.30 RECOMMENDED LAND PATTERN
0.76 0.66 0.25 0.15
SOLDER BALL, O 0.30 C L
C
SOLDER BALL
B
1.30 GATE 0.65
A
FRONT VIEW
INDEX SLOT (HIDDEN)
1
2
3
0.65 0.51 1.30 BOTTOM VIEW
SIDE VIEW
NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) NO JEDEC REGISTRATION REFERENCE AS OF JULY 1999.
FDZ204P Rev. C (W)
FDZ204P
Typical Characteristics
20 R DS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -ID , DRAIN CURRENT (A) 15 -3.0V -2.5V
2 1.8 V GS = -2.5V 1.6 1.4 1.2 1 0.8 0 1 2 3 4 0 5 10 -ID , DRAIN CURRENT (A) 15 20
10 -2.0V 5
-3.0V -3.5V -4.0V -4.5V
0 -V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.18 RDS(ON) ON-RESISTANCE (OHM) ,
1.6 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE ID = -4.5A V GS = -4.5V 1.4
ID = -2.3 A 0.14
1.2
0.1 TA = 125 oC 0.06 TA = 25o C 0.02
1
0.8
0.6 -50 -25 0 25 50 75 100 125 150
1.5
2
2.5
3
3.5
4
4.5
5
T J, JUNCTION TEMPERATURE ( oC)
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
15 V DS = -5V -I D, DRAIN CURRENT (A) -IS, REVERSE DRAIN CURRENT (A) T A = -55oC 25o C 125oC 10
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 V GS = 0V 10 1 0.1 -55o C TA = 125o C 25o C
5
0.01 0.001 0.0001
0 0.5 1 1.5 2 2.5 3 -V GS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
-V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDZ204P Rev. C (W)
FDZ204P
Typical Characteristics
5 -V GS, GATE-SOURCE VOLTAGE (V) ID = -4.5A 4 CAPACITANCE (pF) -15V 3 V DS = -5V -10V
1600 f = 1MHz V GS = 0 V 1200 C ISS 800 COSS 400 CRSS
2
1
0 0 2 4 6 8 10 12
0 0 5 10 15 20 -V DS , DRAIN TO SOURCE VOLTAGE (V)
Q g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100ms 1 DC V GS = -4.5V SINGLE PULSE R JA = 155 oC/W T A = 25o C 0.01 0.1 1 10 100 V DS , DRAIN-SOURCE VOLTAGE (V) 1s 10ms 1ms 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE RJA = 155C/W T A = 25C
30
20
0.1
10
0 0.01
0.1
1
10
100
1000
t 1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RJ A (t) = r(t) + RJ A R J A = 155 C/W P(pk) t1 t2 TJ - T A = P * R J A (t) Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001 0.001
0.01
0.1
1 t 1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDZ204P Rev. C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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