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 Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM100GB120DLC K
vorlaufige Daten preliminary data
Hochstzulassige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms T C = 80 C T C = 25 C tP = 1 ms, T C = 80C VCES IC,nom. IC ICRM 1200 100 205 200 V A A A
T C=25C, Transistor
Ptot
830
W
VGES
+/- 20V
V
IF
100
A
IFRM
200
A
VR = 0V, tp = 10ms, T Vj = 125C
I2t
1,71
kA2s
RMS, f = 50 Hz, t = 1 min.
VISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 100A, VGE = 15V, Tvj = 25C IC = 100A, VGE = 15V, Tvj = 125C IC = 4mA, VCE = VGE, T vj = 25C VGE(th) VCE sat
min.
4,5
typ.
2,1 2,4 5,5
max.
2,6 t.b.d. 6,5 V V V
VGE = -15V...+15V
QG
-
1,1
-
C
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V
Cies
-
6,5
-
nF
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V VCE = 1200V, VGE = 0V, Tvj = 25C VCE = 1200V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C
Cres ICES
-
t.b.d. 10 500 -
500
nF A A
IGES
-
400
nA
prepared by: Mark Munzer approved by:
date of publication: 15.5.1999 revision: 1
1(8)
Datenblatt_BSM100GB120DLC k.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM100GB120DLC K
vorlaufige Daten preliminary data
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 100A, VCE = 600V VGE = 15V, RG = 6,8, T vj = 25C VGE = 15V, RG = 6,8, T vj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 100A, VCE = 600V VGE = 15V, RG = 6,8, T vj = 25C VGE = 15V, RG = 6,8, T vj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 100A, VCE = 600V VGE = 15V, RG = 6,8, T vj = 25C VGE = 15V, RG = 6,8, T vj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 100A, VCE = 600V VGE = 15V, RG = 6,8, T vj = 25C VGE = 15V, RG = 6,8, T vj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip T C=25C IC = 100A, VCE = 600V, VGE = 15V RG = 6,8, T vj = 125C, LS = 60nH IC = 100A, VCE = 600V, VGE = 15V RG = 6,8, T vj = 125C, LS = 60nH tP 10sec, V GE 15V, RG = 6,8 T Vj125C, VCC=900V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 650 40 A nH Eoff 12 mWs Eon 10 mWs tf 0,06 0,08 s s td,off 0,35 0,4 s s tr 0,05 0,05 s s td,on 0,06 0,06 s s
min.
typ.
max.
RCC`+EE`
-
0,85
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 100A, VGE = 0V, Tvj = 25C IF = 100A, VGE = 0V, Tvj = 125C IF = 100A, - diF/dt = 2700A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 100A, - diF/dt = 2700A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 100A, - diF/dt = 2700A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C Erec 4 9 mWs mWs Qr 12 22 As As IRM 125 155 A A VF
min.
-
typ.
1,8 1,7
max.
2,3 t.b.d. V V
2(8)
Datenblatt_BSM100GB120DLC k.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM100GB120DLC K
vorlaufige Daten preliminary data
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = 1 W/m * K / grease = 1 W/m * K RthCK RthJC -
typ.
0,05
max.
0,15 0,3 K/W K/W K/W
T vj
-
-
150
C
T op
-40
-
125
C
T stg
-40
-
150
C
Mechanische Eigenschaften / Mechanical properties
Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M6 M1 3 AL2O3
20
mm
11
mm
275 6 Nm
terminals M5
M2
2,5
5
Nm
G
250
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3(8)
Datenblatt_BSM100GB120DLC k.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM100GB120DLC K
Ausgangskennlinie (typisch) Output characteristic (typical) I = f (VCE) C
VGE = 15V
vorlaufige Daten preliminary data
200 175
Tj = 25C
150 125
Tj = 125C
IC [A]
100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
200 175
VGE = 17V
I = f (VCE) C
Tvj = 125C
150 125
VGE = 15V VGE = 13V VGE = 11V VGE = 9V VGE = 7V
IC [A]
100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
4(8)
Datenblatt_BSM100GB120DLC k.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM100GB120DLC K
vorlaufige Daten preliminary data
Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE)
VCE = 20V
200 175
Tj = 25C
150 125
Tj = 125C
IC [A]
100 75 50 25 0 5 6 7 8 9 10 11 12
VGE [V]
Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical)
200 175
Tj = 25C
I = f (VF) F
150 125
Tj = 125C
IF [A]
100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0
VF [V]
5(8)
Datenblatt_BSM100GB120DLC k.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM100GB120DLC K
vorlaufige Daten preliminary data
Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff =6,8 , VCE = 600V, Tj = 125C
28
Eoff Eon Erec
24 20 E [mJ]
16 12
8 4
0 0 25 50 75 100 125 150 175 200
IC [A]
Schaltverluste (typisch) Switching losses (typical)
40 35 30 25 E [mJ] 20 15 10 5 0 0 5 10 15 20
Eoff Eon Erec
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
VGE=15V , IC = 100A , VCE = 600V , Tj = 125C
25
30
35
40
45
50
RG []
6(8)
Datenblatt_BSM100GB120DLC k.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM100GB120DLC K
vorlaufige Daten
Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t)
preliminary data
1
0,1
ZthJC [K / W]
0,01
Zth:Diode Zth:IGBT
0,001 0,001
0,01
0,1
1
10
100
t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode
i [sec]
: Diode 1 16,78 0,002 39,26 0,002 2 50,78 0,03 103,98 0,03 3 66,16 0,066 113,45 0,072 4 16,28 1,655 43,31 0,682
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
240
VGE = 15V, Rg = 6,8 Ohm, Tvj= 125C
200
160
IC [A]
IC,Modul 120 IC,Chip
80
40
0 0 200 400 600 800 1000 1200 1400
VCE [V]
7(8)
Datenblatt_BSM100GB120DLC k.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM100GB120DLC K
vorlaufige Daten preliminary data
8(8)
Datenblatt_BSM100GB120DLC k.xls


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