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| DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 18 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES * High power gain * Gold metallization ensures excellent reliability * SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, 2 columns BFR93AW 3 1 Top view Marking code: R2. 2 MBC870 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 93 C; note 1 IC = 30 mA; VCE = 5 V IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 C IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C F Tj Note 1. Ts is the temperature at the soldering point of the collector pin. noise figure junction temperature IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt open base CONDITIONS open emitter - - - - 40 - 4 - - - - MIN. - - - - 90 0.6 5 13 8 1.5 - TYP. MAX. 15 12 35 300 - - - - - - 150 pF GHz dB dB dB C UNIT V V mA mW 1995 Sep 18 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Ts = 93 C; see Fig.2; note 1 open base open collector CONDITION open emitter MIN. - - - - - -65 - BFR93AW MAX. 15 12 2 35 300 +150 150 UNIT V V V mA mW C C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITION up to Ts = 93 C; note 1 VALUE 190 UNIT K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 400 P tot (mW) 300 MLB540 200 100 0 0 50 100 150 200 T s ( o C) Fig.2 Power derating curve. 1995 Sep 18 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB = 5 V IC = 30 mA; VCE = 5 V IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C F noise figure IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt IC = 5 mA; VCE = 8 V; f = 2 GHz; s = opt Note - 40 - - - 4 - - - - MIN. - 90 0.7 2.3 0.6 5 13 8 1.5 2.1 TYP. BFR93AW MAX. 50 - - - - - - - - - UNIT nA pF pF pF GHz dB dB dB dB s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ------------------------------------------------------------ dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) 1995 Sep 18 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW handbook, halfpage 120 MCD087 1 Cre (pF) 0.8 MBG203 h FE 80 0.6 0.4 40 0.2 0 0 10 20 IC (mA) 30 0 0 4 8 12 VCB (V) 16 VCE = 5 V. IC = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. 6 fT (GHz) 4 MBG204 2 0 1 10 IC (mA) 10 2 VCE = 5 V; f = 500 MHz; Tamb = 25 C. Fig.5 Transition frequency as a function of collector current; typical values. 1995 Sep 18 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW 30 gain (dB) MSG 20 GUM MBG202 30 gain (dB) 20 MSG MBG201 10 10 GUM 0 0 10 20 IC (mA) 30 0 0 10 20 IC (mA) 30 VCE = 8 V; f = 500 MHz. VCE = 8 V; f = 1 GHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 50 MBG200 handbook, halfpage 50 MGB207 gain (dB) 40 GUM gain (dB) 40 GUM 30 MSG 30 MSG 20 20 10 Gmax 0 10 10 2 10 Gmax 0 10 3 4 2 3 4 f (MHz) 10 10 10 10 f (MHz) 10 VCE = 8 V; IC = 10 mA. VCE = 8 V; IC = 30 mA. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. 1995 Sep 18 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW handbook, halfpage 6 MGC901 handbook, halfpage 6 MGC900 F (dB) 4 F (dB) 4 f = 2 GHz IC = 30 mA 1 GHz 2 500 MHz 2 10 mA 5 mA 0 1 10 IC (mA) 10 2 0 10 2 10 3 f (MHz) 10 4 VCE = 8 V. VCE = 8 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of collector current; typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 5 0o 0 0.2 F min = 1.4 dB opt 0.2 0.5 1 2 5 180 o 0 0.2 F = 2 dB F = 3 dB 0.5 F = 4 dB 1 5 135 o 2 45 o MGC879 1.0 90 o f = 500 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 . Fig.12 Common emitter noise figure circles; typical values. 1995 Sep 18 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW handbook, full pagewidth 90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 2 5 0o 0 0.2 G max = 13.8 dB ms 180 o 0 0.2 G = 13 dB 5 F min = 2 dB opt 0.5 1 F = 2.5 dB 0.2 G = 12 dB G = 11 dB F = 3 dB F = 4 dB 0.5 135 o 1 MGC880 5 2 45 o 1.0 90 o f = 1 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 . Fig.13 Common emitter noise figure circles; typical values. handbook, full pagewidth 90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 (4) (3) 180 o 0 0.2 (5) 0.2 (2) 0.5 (1) 5 (6) (7) (8) 0.5 135 o 1 MGC881 0.2 5 0.4 0.2 1 2 5 0o 0 (1) (2) (3) (4) opt; Fmin = 3 dB. F = 3.5 dB. F = 4 dB. F = 5 dB. 2 (5) ms; Gmax = 8.1 dB. (6) G = 7 dB. (7) G = 6 dB. (8) G = 5 dB. f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 . 45 o 1.0 90 o Fig.14 Common emitter noise figure circles; typical values. 1995 Sep 18 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW handbook, full pagewidth 90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0 0.2 3 GHz 5 40 MHz 0.2 5 0.5 135 o 1 2 45 o MGC878 1.0 90 o VCE = 8 V; IC = 30 mA; Zo = 50 . Fig.15 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 180 o 40 MHz 50 40 30 20 10 3 GHz 0o 135 o 45 o 90 o VCE = 8 V; IC = 30 mA. MGC898 Fig.16 Common emitter forward transmission coefficient (s21); typical values. 1995 Sep 18 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW 90 o handbook, full pagewidth 135 o 3 GHz 45 o 180 o 40 MHz 0.5 0.4 0.3 0.2 0.1 0o 135 o 45 o 90 o VCE = 8 V; IC = 30 mA. MGC899 Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 40 MHz 0.2 3 GHz 5 0o 0 0.2 5 0.5 135 o 1 2 45 o MGC877 1.0 90 o VCE = 8 V; IC = 30 mA; Zo = 50 . Fig.18 Common emitter output reflection coefficient (s22); typical values. 1995 Sep 18 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE BFR93AW handbook, full pagewidth 2.2 1.8 A 1.35 1.15 B X 0.25 0.10 2.2 2.0 0.2 M B 3 0.2 1.0 0.8 0.1 0.0 1.1 max 1 0.65 0.40 0.30 2 0.2 M A detail X 0.3 0.1 MBC871 1.3 Dimensions in mm. Fig.19 SOT323. 1995 Sep 18 11 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFR93AW This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 18 12 |
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