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HiPerFETTM Power MOSFET
IXFN38N100Q2
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet
VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 trr 300 ns
miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings
G S
1000 1000 30 40 38 152 38 60 5.0 20 890 -55 ... +150 150 -55 ... +150 2500
V V V V A A A mJ J V/ns Features W C C C V G = Gate S = Source
S D
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
*Double metal process for low
gate resistance with Aluminium nitride isolation *Unclamped Inductive Switching (UIS) rated *Low package inductance
*miniBLOC,
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
*Fast intrinsic Rectifier
Applications * DC-DC converters
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 V 5.0 V 200 nA TJ = 25C TJ = 125C 50 mA 3 mA 0.25
* Switched-mode
power supplies * DC choppers
and resonant-mode
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1
* Pulse
generators
Advantages * Easy to mount
* Space savings * High power density
(c) 2003 IXYS All rights reserved
DS99027A(06/03)
IXFN38N100Q2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 24 40 7200 VGS = 0 V, VDS = 25 V, f = 1 MHz 950 170 25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) 28 57 15 250 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 105 0.14 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B Outline
gfs Ciss Coss Crss td(on) tr td(off) tf QG(on) QGS QGD RthJC RthCK
VDS = 20 V; ID = 0.5 * ID25
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = 25A -di/dt = 100 A/s VR = 100 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 38 152 1.5 300 1.4 9 A A V ns C A
P Q R S T U
Note: 1. Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFB38N100Q2
Fig. 1. Output Characteristics @ 25 Deg. C
40 35 30 VG S = 10V 6V 80 70 60 VG S = 10V 7V
Fig. 2. Extended Output Characteristics @ 25 deg. C
I D - Amperes
25 20 1 5 1 0 5 0 0 2 4 6 8 1 0 1 2 5V
I D - Amperes
50 40 30 20 1 0 0
6V
5V
0
3
6
9
1 2
1 5
1 8
21
24
V DS - Volts
V DS - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
40 35 30 VG S = 10V 6V 2.8 2.5
Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature
VGS = 10V
25 20 1 5 1 0 5 0 0 4 8 1 2 1 6
5V
RD S (on) - Normalized
2.2 1 .9 1 .6 1 .3 1 0.7 0.4
I D - Amperes
I D = 38A I D = 19A
20
24
-50
-25
0
25
50
75
1 00
1 25
1 50
V DS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to I D25 Value vs. ID
2.6 2.4 VG S = 10V T J = 125 C 40 35 30
Fig. 6. Drain Current vs. Case Temperature
RD S (on) - Normalized
2.2 2 1 .8 1 .6 1 .4 1 .2 1 0.8 0 1 0 20 30 40
I D - Amperes
T J = 25 C
25 20 1 5 1 0 5 0
50
60
70
80
-50
-25
0
25
50
75
1 00
1 25
1 50
I D - Amperes
(c) 2003 IXYS All rights reserved
TC - Degrees Centigrade
IXFN38N100Q2
Fig. 7. Input Admittance
50 80 70 40 60 T J = -40 C 25 C 50 40 30 20 1 0 0 3 3.5 4 4.5 5 5.5 6 0 1 0 20 30 40 50 60 70 125 C
Fig. 8. Transconductance
I D - Amperes
30
20 T J = 120 C 1 0 25 C -40 C
0
gf s - Siemens
V GS - Volts
I D - Amperes
Fig. 9. Source Current vs. Source-To-Drain Voltage
90 80 70 8 1 0
Fig. 10. Gate Charge
VD S = 500V 9A I D= 1 I G = 10mA
I S - Amperes
60
VG S - Volts
TJ = 25 C
50 40 30 20 1 0 0 0.2 0.4 0.6 0.8 1 1 .2
6
TJ = 125 C
4
2
0 0 40 80 1 20 1 60 200 240
V SD - Volts
Q G - nanoCoulombs
Fig. 11. Capacitance
1 0000 C iss 0.1 6 0.1 4 f = 1M Hz 0.1 2
Fig. 12. Maximum Transient Thermal Resistance
Capacitance - pF
R (th) J C - (C/W)
25 30 35 40
0.1 0.08 0.06 0.04
1 000 C oss
C rss 1 00 0 5 1 0 1 5 20
0.02 0 1 1 0 1 00 1 000
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
Pulse Width - milliseconds
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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