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PD - 94058
HEXFET(R) POWER MOSFET THRU-HOLE (TO-257AA)
IRF5Y1310CM 100V, N-CHANNEL
Product Summary
Part Number
IRF5Y1310CM BVDSS
100V
RDS(on) 0.044
ID 18A*
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-257AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 18* 72 100 0.8 20 210 18 10 3.8 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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01/17/01
IRF5Y1310CM
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- 2.0 14 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.114 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.044 4.0 -- 25 250 100 -100 110 15 58 19 85 65 54 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 18A VDS = VGS, ID = 250A VDS = 25V, IDS = 18A VDS = 100V ,VGS=0V VDS = 80V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 18A VDS = 80V VDD = 50V, ID = 18A, VGS =10V, RG = 3.6
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1872 463 234
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 18* 72 1.3 270 1.8
Test Conditions
A
V ns C Tj = 25C, IS = 18A, VGS = 0V Tj = 25C, IF = 18A, di/dt 100A/s VDD 30V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 1.25
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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IRF5Y1310CM
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
4.5V
4.5V
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
I D , Drain-to-Source Current (A)
TJ = 25 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 150 C
ID = 18A
2.0
1.5
10
1.0
0.5
1 4.0
15
V DS = 50V 20s PULSE WIDTH 7.0 8.0 5.0 6.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF5Y1310CM
3500 3000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 18A
16
C, Capacitance (pF)
VDS = 80V VDS = 50V VDS = 20V
2500
2000
Ciss
12
1500
8
1000
C oss C rss
4
500 0 1
10
100
0 0 20 40 60
FOR TEST CIRCUIT SEE FIGURE 13
80 100 120 140
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
TJ = 150 C
10
TJ = 25 C
1
ID, Drain-to-Source Current (A)
100
10 Tc = 25C Tj = 150C Single Pulse 1 1 10 100 1000 VDS , Drain-toSource Voltage (V)
1ms 10ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF5Y1310CM
35
LIMITED BY PACKAGE
30
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
25
-VDD
20
VGS
Pulse Width 1 s Duty Factor 0.1 %
15
10
Fig 10a. Switching Time Test Circuit
VDS 90%
25 50 75 100 125 150
5
0
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5Y1310CM
EAS , Single Pulse Avalanche Energy (mJ)
400
15V
300
ID 8.0A 11.4A BOTTOM 18A TOP
VDS
L
D R IV E R
RG
D .U .T.
IA S
200
+ - VD D
A
VGS 20V
tp
0 .01
100
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting T , Junction Temperature C) ( J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF5Y1310CM
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 1.3mH Peak IAS = 18A, VGS =10V, RG= 25
ISD 18A, di/dt 340 A/s, Pulse width 300 s; Duty Cycle 2%
VDD 100V, TJ 150C
Case Outline and Dimensions -- TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/01
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