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| v00.0304 MICROWAVE CORPORATION HMC464LP5 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Features +26 dBm P1dB Output Power Gain: 14 dB +30 dBm Output IP3 Supply Voltage: +8.0V @ 290 mA 50 Ohm Matched Input/Output 25 mm2 Leadless SMT Package 8 AMPLIFIERS - SMT Typical Applications The HMC464LP5 wideband driver is ideal for: * Telecom Infrastructure * Microwave Radio & VSAT * Military EW, ECM & C3I * Test Instrumentation * Fiber Optics Functional Diagram General Description The HMC464LP5 is a GaAs MMIC PHEMT Distributed Power Amplifier in a leadless 5 x 5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, +30 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good from 2 - 18 GHz making the HMC464LP5 ideal for EW, ECM and radar driver amplifier as well as test equipment applications. The wideband amplifier I/O's are internally matched to 50 Ohms. Electrical Specifications, TA = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 8V, Vgg= -0.5V Typ.) 23.5 12 Min. Typ. 2.0 - 6.0 14 0.5 0.025 15 15 26.5 27.5 32 4.0 290 22 0.035 11.5 Max. Min. Typ. 6.0 - 16.0 13.5 0.5 0.03 10 9 25 26 26 4.0 290 18 0.04 8 Max. Min. Typ. 16.0 - 20.0 11 1.0 0.05 7 11 21 24.0 22 6.0 290 0.06 Max. Units GHz dB dB dB/ C dB dB dBm dBm dBm dB mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical. 8 - 268 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0304 MICROWAVE CORPORATION HMC464LP5 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz GaAs MMIC PUMPED MIXER Gain & Return LossSUB-HARMONICALLY Gain vs. Temperature 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) S21 S11 S22 17 - 25 GHz 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C 8 AMPLIFIERS - SMT 8 - 269 Input Return Loss vs. Temperature 0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) +25C +85C -40C GAIN (dB) -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 -70 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Noise Figure vs. Temperature 12 11 10 NOISE FIGURE (dB) 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0304 MICROWAVE CORPORATION HMC464LP5 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz 8 AMPLIFIERS - SMT GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature 30 28 26 24 P1dB (dBm) 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C 17 - 25 GHz 30 28 26 24 Psat (dBm) 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Output IP3 vs. Temperature 36 34 32 30 OIP3 (dBm) 28 26 24 22 20 18 16 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Gain, Power & OIP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg1 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 32 30 28 26 24 22 20 18 16 14 12 10 7.5 8 SUPPLY VOLTAGE (Vdc) 8.5 Gain P1dB Psat OIP3 Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFin)(Vdd = +8.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 51.5 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +9.0 Vdc -2.0 to 0 Vdc (Vdd -8.0) Vdc to Vdd +23 dBm 150 C 3.35 W 19.4 C/W -65 to +150 C -40 to +85 C Typical Supply Current vs. Vdd Vdd (V) +7.5 +8.0 +8.5 Idd (mA) 292 290 288 8 - 270 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0304 MICROWAVE CORPORATION HMC464LP5 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Outline Drawing 8 AMPLIFIERS - SMT Pad Descriptions Pad Number 5 Function RFIN NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD Description This pin is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz Gate Control for amplifier. Adjust between -2 to 0V to achieve Idd= 290 mA. RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Interface Schematic 15 Vgg1 21 RFOUT & Vdd 30 Vgg2 Control voltage for amplifier. +3V should be applied to Vgg2 for nominal operation. Ground Paddle GND Ground paddle must be connected to RF/DC ground. 1-4, 6-14, 16-20, 22-29, 31, 32 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 271 v00.0304 MICROWAVE CORPORATION HMC464LP5 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz 8 AMPLIFIERS - SMT Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 8 - 272 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0304 MICROWAVE CORPORATION HMC464LP5 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Materials for Evaluation PCB 108344* Item J1, J2 J3, J4 C1, C2 C3, C4 C5, C6 U1 PCB** Description PC Mount SMA Connector 2 mm Molex Header 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 4.7 F Capacitor, Tantalum HMC464LP5 108342 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 273 |
Price & Availability of HMC464LP5
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