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TA31275FN/ TA31275FNG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA31275FN, TA31275FNG AM/FM RF/IF Detector IC for Low Power Wireless System The TA31275FN is an RF/IF detector IC for AM/FM radio. The IC incorporates an RF amp, 2-level comparator, and local x8 circuit Features * * * * * * RF frequency: 240 to 450 MHz (multiplication is used) 100 to 450 MHz (multiplication is not used) IF frequency: 10.7 MHz Operating voltage range: 2.4 to 5.5 V Current dissipation: 5.8 mA (FM)/5.4 mA (AM) (except current at oscillator circuit) Current dissipation at BS: 0 A (typ.) Small package: 24-pin SSOP (0.65 mm pitch) Weight: 0.09 g (typ.) Block Diagram SAW 22 20 19 18 17 16 15 14 13 21 24 23 LPF LPF AF RSSI REF AM/FM MIX GND1 RF- CHARGE RFRFOUT IN OUT IN OUT DEC IN AM/FM RSSI Comparator x8 OSCIN 1 VCCLo LoBS 2 3 MIX OUT 4 IFDEC GND2 7 8 Detector VCC1 5 IF-IN 6 BS QUAD 9 10 VCC2 DATA 11 12 BPF 1 03-01-23 TA31275FN/ TA31275FNG Pin Description (the values of resistor and capacitor in the internal equivalent circuit are typical.) Pin No. Pin Name Function Internal Equivalent Circuit 15 k 1 OSC IN Local oscillator input pin. 1 2 pF 5 k 2 VCC-Lo Local' power supply pin 3 LOBS Lo switch pin. H: x8 circuit pin. L: Through pass 3 70 k Mixer output pin. 4 MIX OUT The output impedance of the pin is typically 330 . 4 245 5 VCC1 Power supply pin 1. 6 IF IN IF amp input pin. 3 k 170 170 IF amp input pin. 7 IF DEC Used as a bias coupling pin. 6 15 k 7 5 k 40 k 8 GND2 GND pin 2. 9 BS Battery saving pin. 9 5 k 2 03-01-23 TA31275FN/ TA31275FNG Pin No. Pin Name Function Internal Equivalent Circuit 8 k 2 k 3 k 5 k 10 QUAD Phase-shift input terminal for the FSK Demodulator. Connect to the discriminator or LC. 1 k 1 pF 10 500 11 VCC2 Power supply pin 2. 12 DATA FM/AM waveform shaping output pin. Open collector output. Connect a pull-up resistor. 12 13 RF IN RF signal input pin. 10 k 16 14 RF DEC Emitter pin for internal transistor. 13 16 RF OUT RF amp output pin. 14 500 15 CHARGE 100 k Control terminal for quick charge circuit. To use the quick charge circuit, attach a capacitor. 15 17 GND1 GND pin 1. 2.4 k 18 MIX IN Mixer input pin. 18 19 AM/FM Changeover switch for ASK/FSK. Hi: AM Lo: FM 300 k 19 500 8 k 3 03-01-23 TA31275FN/ TA31275FNG Pin No. Pin Name Function Internal Equivalent Circuit 24 20 REF Threshold input terminal for 2-level FM/AM comparator. 23 500 20 100 k COMP DATA 33 k 30 k 30 k 500 24 100 k 5.5 k 21 RSSI RSSI output pin. 21 22 AFOUT Output terminal for FM demodulator. 22 23 LPF IN FM/AM LPF input pin. 5.5 k 23 24 LPF OUT FM/AM LPF output pin. Equivalent circuits are given to help understand design of the external circuits to be connected. They do not accurately represent the internal circuits. 4 03-01-23 TA31275FN/ TA31275FNG Functions 1. Waveform Shaper Circuit (comparator) The output data (pin 12) are inverted. 2. RSSI Function DC potential corresponding to the input level of IF IN (pin 6) is output to RSSI (pin 21). Output to RSSI (pin 21) is converted to a voltage by the internal resistance. Thus, connecting external resistance R to pin 21 varies the gradient of the RSSI output as shown below. Note that due to the displacement of temperature coefficients between external resistor R and the internal IC resistor IC resistor, the temperature characteristic of the RSSI output may change. Also, the maximum RSSI value should be VCC - 1 V or less, because AM doesn't correct movement Filter AMP when voltage of RSSI high. 30 k 21 R After R is connected IF input level Figure 1 3. VCC Pin and GND Pin Figure 2 Use the same voltage supply for VCC - Lo (2 pin) and VCC1 (5 pin) and VCC2 (11 pin) (or connect them). Also, use the same voltage supply source for GND1 (17 pin) and GND2 (8 pin) (or connect them). 4. Local Oscillator Circuit The local oscillator circuit is external-input-only. The device incorporates no transistor for oscillation. Input to pin 1 at a level from 95 to 105dBV. Adjust the values of constants C107 and C108 shown in the application circuit diagram so that the input level will become approximately 100dBV. By switching the Lo switch (LOBS), the frequency set by the external circuit can be used as-is without using the x8 circuit. Lo Switch (LOBS) Local oscillation status H x8 circuit in operation L x8 circuit halted/through pass 5. RF Amp Current Adjustment The RF amp current dissipation can be regulated by varying resistor R as shown in the figure below. When R = 1 k, the current dissipation is approximately 600 A. 14 RF DEC Figure 3 R 5 03-01-23 TA31275FN/ TA31275FNG 6. Battery-Saving (BS) Function and Lo Switch LOBS Function The IC incorporates a battery-saving function and a Lo switch function. These function offer the following selection. FM Mode (FM/AM pin: L) BS Pin/LOBS Pin Circuit Status in the IC Circuits in operation: x8 circuit Mixer RF amp Comparator IF amp Detector circuit RSSI Comparator capacitor charger circuit x8 circuit only halted, Frequency set by External circuit can be used as-is. x8 circuit only in operation All circuits IC Current Dissipation (at no signal) H/H 5.8 mA (typ.) H/L L/H L/L 3.5 mA (typ.) 2.6 mA (typ.) 0 mA (typ.) AM Mode (FM/AM pin: H) BS Pin/LOBS Pin Circuit Status in the IC Circuits in operation: x8 circuit Mixer RF amp Comparator IF amp RSSI Comparator capacitor charger circuit x8 circuit only halted, Frequency set by External circuit can be used as-is. x8 circuit only in operation All circuits IC Current Dissipation (at no signal) H/H 5.4 mA (typ.) H/L L/H L/L 3.1 mA (typ.) 2.6 mA (typ.) 0 mA (typ.) 6 03-01-23 TA31275FN/ TA31275FNG 7. RF Amp Gain 2 RF amp gain 2 (Gv (RF) 2) is a reference value calculated as follows. Measure GRF in the following figure. Gv (RF) 2 is calculated as follows: Gv (RF) 2 = GRF - Gv (MIX) 0.01 F 27 nH 1 k 6 pF 1000 pF 18 16 1000 pF 13 6 pF 33 nH SG 50dBV 4 0.01 F GRF 6 Figure 4 8. IF Amp Gain The intended value is 75dB. 9. Waveform-Shaping Output Duty Cycle The specified range of electrical characteristics is only available for single-tone. 10. Local Frequency Range (after multiplying frequency by 8) When the multiplier circuit is used, the local frequency will be in the range 250.7 MHz to 439.3 MHz. 11. Treatment of FM Terminal when Using AM When using AM, it is not necessary to treat the QUAD pin (pin 10). Leave it open or connected to an FM external circuit. To use the bit rate filter, connect the RSSI pin (pin 21) to the bit rate filter through a resistor. The AF-OUT pin (pin 22) should be left open. C18 R9 C18 36 k R9 22 21 AF RSSI OUT Bit rate filter for FM C17 R8 22 21 AF RSSI OUT Bit rate filter for AM Figure 5 Figure 6 Using AM causes current to flow through the AM/FM pin (pin 19). Ground the AM/FM pin (pin 19) or connect it to the BS pin (pin 9). 7 03-01-23 TA31275FN/ TA31275FNG 12. Control Terminal for Quick Charge Circuit (CHARGE) CHARGE (15 pin) is control terminal for quick charge circuit. REF (20 pin) control terminal for quick charge a given period by time constant of internal resistance and outside capacitance. Enabling the CHARGE pin requires an external capacitor. In normal operation, connect a capacitor having the same capacitance as that of the capacitor connected to the REF pin (pin 20). If the connected external capacitor (C11) is 0.1 F, the quick charge time is 7 ms (typically). 13. Bit Rate Filter for FM The current FM bit rate filter is used as a tertiary filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant. Quadratic Filter (NRZ) R10 1200 bps 2400 bps 4800 bps 68 k 68 k 68 k R9 68 k 68 k 68 k R8 68 k 68 k 68 k C20 0.01 F 4700 pF 2200 pF C19 560 pF 270 pF 150 pF C18 3300 pF 1500 pF 680 pF 14. Bit Rate Filter for AM The current AM bit rate filter is used as a quadratic filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant. Quadratic Filter (NRZ) (the bit rate filter time constant takes into account the internal resistance RSSI (30 k)) R 1200 bps 2400 bps 4800 bps 36 k 36 k 36 k R10 68 k 68 k 68 k C20 4700 pF 2200 pF 1000 pF C19 1500 pF 680 pF 390 pF When the filter constants shown below are used, it is not necessary to set the R constant value. R 1200 bps 2400 bps 4800 bps R10 30 k 30 k 30 k C20 6800 pF 3300 pF 1800 pF C19 2200 pF 1500 pF 820 pF In addition, the current AM bit rate filter can be used as a tertiary filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant. 8 03-01-23 TA31275FN/ TA31275FNG Quadratic Filter (NRZ) (the bit rate filter time constant takes into account the internal resistance RSSI (30 k)) R 1200 bps 2400 bps 4800 bps 36 k 36 k 36 k R9 68 k 68 k 68 k R10 68 k 68 k 68 k C20 0.01 F 4700 pF 2200 pF C19 560 pF 270 pF 150 pF C18 3300 pF 1500 pF 680 pF When the filter constants shown below are used, it is not necessary to set the R constant value. R 1200 bps 2400 bps 4800 bps R9 30 k 30 k 30 k R10 30 k 30 k 30 k C20 0.033 F 0.015 F 6800 pF C19 2200 pF 1000 pF 470 pF C18 8200 pF 3900 pF 1800 pF For the cutoff frequency of the bit rate filter, specify a sufficiently high value for the bit rate to be used. Specifying a relatively high cutoff frequency for the bit rate filter enables a low capacitor to be used at the REF pin, therefore making the pulse rise quickly. When AM is used, the internal resistance of RSSI is used. So, take the output resistance into account when specifying a cutoff frequency. 9 03-01-23 TA31275FN/ TA31275FNG Cautions for Designing Circuit Board Patterns Observe the following cautions when designing circuit patterns for this product. Local Oscillator Circuit (pin 1) Isolate the local oscillator circuit block sufficiently from the RF amp block. Isolate the local oscillator circuit block securely so that its output will not get in the IF input, IF filter, or mixer input. Do not place the local oscillator circuit block too close to the ceramic filter. Subdivide the ground pattern for the local oscillator circuit block, and connect the subdivisions with thin lines. Mixer Output Block (pin 4) to IF Input Block (pin 6) Isolate the input and output patterns of the IF filter securely from each other. Demodulator Circuit Block (pin 10) Isolate the demodulator circuit block sufficiently from the IF input block (pin 6). Do not place the LC too close to the IC device. Data Output Block (pin 12) Isolate the data output block sufficiently from the IF input block (pin 6). Isolate the output pattern of the data output block from other circuits as much as possible, so any noise from a stage subsequent to the output will not affect them. RF Amp Circuit Block (1) Preventing RF amp oscillation Do not place the patterns connected to pins 13 and 14 too close to each other. Isolate the patterns connected to the input block (pin 13) and output block (pin 16) from each other. Make the RF input signal line relatively thin. Place a relatively wide ground pattern between the RF-IN pin (pin 13) and RF-DEC pin (pin 14). Connect the RF-OUT pin (pin 16) and MIX-IN pin (pin 18) with the shortest possible pattern. Attaining a sufficient gain To attain a sufficient RF amp gain, select an optimum value for the input matching circuit block (pin 13) according to the board circuit pattern. (2) IC Mounting Area Provide a ground pattern under the IC device, and prepare relatively many through holes. 10 03-01-23 TA31275FN/ TA31275FNG Maximum Ratings (unless otherwise specified, Ta = 25C. the voltage is with reference to the ground level.) Characteristics Supply voltage Power dissipation Operating temperature range Storage temperature range Symbol VCC PD Topr Tstg Rating 6 780 -40 to 85 -55 to 150 Unit V mW C C The maximum ratings must not be exceeded at any time. Do not operate the device under conditions outside the above ratings. Operable Range (unless otherwise specified, Ta = 25C. the voltage is with reference to the ground level.) Characteristics Operating voltage range RF operating frequency 1 RF operating frequency 2 Local frequency Symbol VCC fRF1 fRF2 fLO Test Circuit Test Condition When frequency multiplication is used When frequency multiplication is not used When frequency multiplication is used (x8) Min 2.4 240 100 250.7 Typ. 5.0 Max 5.5 450 450 439.3 Unit V MHz MHz MHz Operating ranges indicate the conditions for which the device is intended to be functional even with the electrical changes. Electrical Characteristics (unless otherwise specified: Ta = 25C, VCC = 5 V, fin (RF) = fin (MIX) = 314.9 MHz, fin (IF) = 10.7 MHz) Characteristics Current dissipation at battery saving RF amp gain 1 Mixer conversion gain RSSI output voltage 1 RSSI output voltage 2 RSSI output voltage 3 RSSI output resistance Comparator input resistance Data output voltage (L level) Data output leakage current (H level) BS pin H-level input voltage BS pin L-level input voltage LOBS pin H-level input voltage LOBS pin L-level input voltage Symbol Icco Gv (RF) 1 Gv (MIX) VRSSI1 VRSSI2 VRSSI3 RRSSI RCOMP VDATAL IDATAH VBSH VBSL VLOBSH VLOBSL Test Circuit 3 1 (5) 1 (3) 1 (4) Test Condition BS = "L", LOBS = "L" The input and output impedances are 50 . Vin (IF) = 35dBVEMF Vin (IF) = 65dBVEMF Vin (IF) = 100dBVEMF IDATAL = 500 A Min -9.0 17 0.05 0.8 1.6 22 75 2.2 0 2.2 0 Typ. 0 -6.0 21 0.25 1.05 1.95 30 100 Max 5 -3.0 25 0.45 1.3 2.3 38 125 0.4 2 5.5 0.2 5.5 0.2 Unit A dB dB V V V k k V A V V V V 11 03-01-23 TA31275FN/ TA31275FNG FM Mode (Ta = 25C, VCC = 5.0 V, fin (RF) = fin (MIX) = 314.9 MHz, fin (IF) = 10.7 MHz, dev = 20 kHz, fmod = 600 Hz (single wave)) Characteristics Quiescent current consumption (for FM) Demodulated output level Waveform shaping duty ratio Symbol Iccqfm Vod DRfm Test Circuit 2 (1) 1 (2) Test Condition BS/LOBS/FMAM = "H/H/L" Fin (Lo) = 40.7 MHz Vin (IF) = 80dBVEMF Vin (IF) = 80dBVEMF For single tone Min 4.3 30 45 Typ. 5.8 40 50 Max 7.3 55 55 Unit mA mVrms % AM Mode (Ta = 25C, VCC = 5.0 V, fin (RF) = fin (MIX) = 314.9 MHz, fin (IF) = 10.7 MHz, AM = 90%, fmod = 600 Hz (square wave)) Characteristics Quiescent current consumption (for AM) Reference characteristic data Symbol Iccqam DRam Test Circuit 2 (2) 1 (2) Test Condition BS/LOBS/FMAM = "H/H/H" Fin (Lo) = 40.7 MHz Vin (IF) = 80dBVEMF For single tone Min 4.0 45 Typ. 5.4 50 Max 6.8 55 Unit mA % Reference Characteristic Data* Characteristics IF amp input resistance RF amp gain 2 RF amp input resistance RF amp input capacitance RF amp output capacitance Mixer input resistance Mixer input capacitance Mixer output resistance Mixer intercept point Symbol R (IF) IN Gv (RF) 2 R (RF) IN C (RF) IN C (RF) OUT R (MIX) IN C (MIX) IN R (MIX) OUT IP3 Test Circuit Test Condition Typ. 330 31 1.2 2.0 2.0 1.5 1.5 330 96 Unit dB k pF pF k pF dBV *: These characteristic data values are listed just for reference purposes. They are not guaranteed values. Reference Characteristic Data (FM mode)* Characteristics Limiting sensitivity Signal-to-noise ratio 1 Signal-to-noise ratio 2 Symbol Vi (LIM) S/N1 S/N2 Test Circuit 1 (8) 1 (8) IF input Vin (IF) = 40dBVEMF Vin (IF) = 80dBVEMF Test Condition Typ. 35 40 57 Unit dBV EMF dB dB *: These characteristic data values are listed just for reference purposes. They are not guaranteed values. 12 03-01-23 TA31275FN/ TA31275FNG Typical Test Circuit (FSK) VCC C12 C22 6 pF 0.01 F 1000 pF 3300 pF C18 27nH L4 VCC 1000 pF C17 1000 pF 0.1 F C13 1 k 0.01 F R10 68 k C19 560 pF C11 > C15 = R5 1 k C10 C9 68 k R9 R6 68 k C20 22 20 19 18 17 16 15 14 13 21 24 23 LPF LPF AF RF RSSI REF AM/FM MIX GND1 RF CHARGE RF OUT IN OUT OUT DEC IN IN AM/FM RSSI Comparator x8 Detector OSC IN 1 MIX LOBS OUT 4 2 3 C2 0.1 F VCC1 5 C3 IF IN IF DEC GND2 6 7 8 0.01 F C6 BS QUAD VCC2 DATA 10 11 12 0.1 F 12 100 k VCC V 2.5 V V 20 R = 10 k 2.5 V VCC V 3.0 V V 23 3.0 V V 23 V 20 12 100 k I = V/100 x 10 3 C15 0.1 F Detector C7 BPF VCC C14 0.01 F VCC 4.7 k VCC VCC VCC DATA R3 0.1 F VCC Test Circuit 1 (1) VRSSI 0.01 F 6 62 SG 21 1000 pF V 51 SG (2) DR 0.01 F 6 (3) VDATAL (4) IDATAH 10 F 100 k VCC 9 0.1 F 12 R4 1000 pF R8 13 03-01-23 TA31275FN/ TA31275FNG (5) Gv (RF) 1 1000 pF 13 51 SG 16 51 k 51 SG 1000 pF (6) Gv (MIX) 1000 pF 13 4 0.01 F 6 Buff 1 51 24 13 51 0.01 F 51 SG 1 k 1 8 14 17 1 3 9 19 A VCC 5 11 (7) Gv (MIX) vs VLO 0.01 F 51 0.01 F SG 1 4 (8) S/N1, 2 0.01 F SG 1000 pF 51 SG 18 6 1000 pF SG Test Circuit 2 Iccqfm 0.01 F 51 Iccqam SG 8 17 1 k 14 19 2 3 9 A 5 11 2 VCC Test Circuit 3 Icco 8 17 9 2 A VCC 5 1 k 14 16 14 03-01-23 TA31275FN/ TA31275FNG Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.) Quiescent Current Consumption - Supply Voltage Characteristics 7 f (Lo) in = 40.7 MHz V (Lo) in = 100dBV 6 * No switching pin current is included. 5 8 110C 7 Quiescent Current Consumption - Supply Voltage Characteristics FM Mode (mA) Quiescent current consumption ICC Quiescent current consumption ICCqfm (mA) FM_ALL AM_ALL 6 5 25C 4 Multiplication off 3 Multiplication only -40C 4 3 2 1 0 0 2 1 BS 0 0 1 2 f (Lo) in = 40.7 MHz V (Lo) in = 100dBVEMF * No switching pin current is included. 1 2 3 4 5 6 3 4 5 6 Supply voltage VCC (V) Supply voltage VCC (V) Quiescent Current Consumption - Supply Voltage Characteristics AM Mode 8 7 110C 0 -5 RF Amp Conversion Gain - Supply Voltage Characteristics Quiescent current consumption ICCqam (mA) RF amp conversion gain (dB) -10 -15 -20 110C -25 -30 -35 -40 -45 25C f (RF) in = 314.9 MHz V (RF) in = 50dBVEMF 6 25C 5 -40C 4 3 2 1 0 0 f (Lo) in = 40.7 MHz V (Lo) in = 100dBVEMF * No switching pin current is included. 1 2 3 4 5 6 -50 1 Supply voltage VCC (V) Supply voltage VCC (V) RF Amp Frequency Characteristics -2 -3 DEC (R5) = 750 2.5 S Curve Characteristics (IF IN) VCC = 5 V f (IF) in = 10.7 MHz + f RF amp conversion gain (dB) -4 -5 DEC (R5) = 1 k -6 VCC = 5 V V (RF) in = 50dBV -8 S curve output voltage (V) 2 V (IF) in = 50dBVEMF 1.5 -40C 1 25C 0.5 110C 500 1000 0 -600 -400 -200 0 200 400 600 RF IN input frequency f (RF) in (MHz) Detuning frequency (kHz) 15 03-01-23 TA31275FN/ TA31275FNG Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.) RSSI Output Voltage Characteristics (IF, MIX, and RF inputs) 2.5 2.5 RSSI Output Voltage Characteristics (MIX inputs) VCC = 5 V f (MIX) in = 314.9 MHz f (Lo) in = 40.7 MHz 2 V (Lo) in = 100dBV LOBS = H (V) 2 RF IN MIXIN (multiplication is used) VRSSI VRSSI (V) 25C -40C 1.5 RSSI output voltage 1 RSSI output voltage MIXIN (multiplication is not used) f (RF) in = f (MIX) in = 314.9 MHz/VCC = 5 V f (IF) in = 10.7 MHz f (Lo) in = 40.7/304.2 MHz V (Lo) in = 100dBV 1 0.5 IF IN 0 -20 0 20 40 0.5 0 -20 0 20 40 60 80 100 120 Input level Vin (dBVEMF) MIX IN input level V (MIX) in (dBVEMF) S/N Characteristics (IF input) in the FM Mode 10 0 -10 S+N 10 0 -10 -20 AMR N -30 -40 -50 -60 -70 -20 S/N Characteristics (IF input) in the AM Mode S+N -20 -30 -40 -50 -60 -70 -80 N S + N, N VCC = 5 V f (IF) in = 10.7 MHz Dev = 20 kHz fmod = 600 Hz S + N, N VCC = 5 V f (IF) in = 10.7 MHz AM = 90% fmod = 600 Hz (dB) (dB) -90 -20 0 20 40 60 80 100 120 IF IN input level V (IF) in (dBVEMF) IF IN input level V (IF) in (dBVEMF) S/N Characteristics (MIX input) in the AM Mode when Multiplication is Used 10 -40C 0 25C -20 110C VCC = 5 V f (MIX) in = 314.9 MHz f (Lo) in = 40.7 MHz f (Lo) in = 100dBV Dev = 20 kHz fmod = 600 Hz LOBS = "H" S/N Characteristics (MIX input) in the AM Mode when Multiplication is Used S+N VCC = 5 V f (MIX) in = 314.9 MHz f (Lo) in = 304.2 MHz V (Lo) in = 100dBV AM = 90% fmod = 600 Hz (rectangular wave) LOBS = "H" (dB) (dB) S + N, N -30 110C -40 -30 -40 -50 -60 -70 -80 -90 -20 0 20 40 60 N S + N, N 80 100 120 MIX IN input level V (MIX) in (dBVEMF) MIX IN input level V (MIX) in (dBVEMF) 16 03-01-23 TA31275FN/ TA31275FNG Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.) Mixer Conversion Gain - Supply Voltage Characteristics 30 20 24 Mixer Conversion Gain Frequency Characteristics Mixer conversion gain GV (MIX) (dB) 22 -40C 20 18 VCC = 5 V 16 V (MIX) in = 60dBV V (Lo) in = 100dBV 14 LOBS = "L" (direct input) Mixer conversion gain GV (dB) 110C 10 25C 0 -10 -20 -30 -40 -50 1 -40C f (MIX) in = 314.9 MHz V (MIX) = 60dBV f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" 2 500 1000 Local input level V (Lo) in (dBV) MIX IN input frequency f (MIX) in (MHz) Mixer Conversion Gain - Local Input Level Characteristics 30 30 Mixer Conversion Gain - Local Input Level Characteristics Mixer conversion gain GV (MIX) (dB) Mixer conversion gain GV (MIX) (dB) 20 20 -40C 10 10 VCC = 5 V 0 Multiplication is not used -10 Multiplication is used f (MIX) in = 314.9 MHz V (MIX) in = 60dBV f (Lo) in = 40.7 MHz 0 -10 -20 -30 -40 50 25C 110C -20 VCC = 5 V f (MIX) in = 314.9 MHz V (MIX) in = 60dBV f (Lo) in = 40.7 MHz LOBS = "H" 60 70 Local input level V (Lo) in (dBV) Local input level V (Lo) in (dBV) Detuning Characteristics 5 160 Mixer Intercept Point VCC = 5 V f (MIX) in = 314.9 MHz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV fmod = 600 Hz (dBV) Mixer output level V (MIX) out 600 -40C 110C 25C VCC = 5 V f (IF) in = 50dBVEMF f (IF) in = 10.7 MHz + f Dev = 20 kHz fmod = 600 Hz 140 120 100 80 0 (dB) Attenuation level -5 -10 -15 -20 -25 -600 60 80 100 120 Detuning frequency (kHz) 17 03-01-23 TA31275FN/ TA31275FNG Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.) Demodulation Distortion Characteristics -15 VCC = 5 V f (IF) in = 10.7 MHz Vin = 50dBV Dev = 20 kHz AM/FM = "L" Demodulation Output - Supply Voltage Characteristics (FM) Demodulation distortion (dB) -20 (mVrms) 35 110C 30 25 20 -40C 15 10 5 f (IF) in = 10.7 MHz V (IF) in = 50dBVEMF Dev = 20 kHz fmod = 600 Hz -30 -35 -40 -600 Demodulation output -25 -400 -200 0 200 400 600 0 1 Detuning frequency (IF IN) (kHz) Supply voltage VCC (V) Waveform Shaping Duty Ratio - Supply Voltage Characteristics FM Mode 54 52 50 110C 48 46 25C 44 42 40 38 36 34 1 2 3 4 -40C f (IF) in = 10.7 MHz V (IF) in = 50dBVEMF Dev = 20 kHz fmod = 600 Hz Waveform shaping output duty ratio DR (%) Supply voltage VCC (V) 18 03-01-23 TA31275FN/ TA31275FNG Reference Data (with a broadband ceramic filter (280 k) used) 12-dB SINAD Sensitivity Characteristics - FM Modulation 2 1 0 -1 -2 -3 -4 -5 -6 -7 0 VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter Sensitivity Detuning Characteristics (AM and FM modulation) (dBVEMF) 12-dB SINAD sensitivity 20 40 60 80 100 12-dB SINAD sensitivity (dBVEMF) 314.9 FM modulation Dev (kHz) RF IN input frequency f (RF) in (MHz) 12-dB SINAD sensitivity - Supply Voltage Characteristics 3 2.5 2 1.5 1 0.5 0 -0.5 -1 -1.5 1 VCC = 5 V Dev = 20 kHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter S Curve - Supply Voltage Characteristics VCC = 5 V fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter (dBVEMF) 40dBVMF 30dBVMF 2 12-dB SINAD sensitivity AFOUT pin voltage (V) 1.5 1 0dBVMF 20dBVMF 0.5 10dBVMF 2 3 4 5 6 0 314.4 314.55 314.7 314.85 315 315.15 315.3 315.45 Supply voltage VCC (V) RF IN input frequency f (RF) in (MHz) S/N and AMR RF Input Characteristics (Dev = 20 k) 10 0 -10 S+N VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter S/N and AMR RF Input Characteristics (Dev = 40 k) S+N VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter S + N, AMR (dB) -20 -30 -40 -50 AMR S + N, AMR (dB) -20 -30 AMR -40 -50 N -60 -70 -20 -60 -70 -20 N 0 20 40 60 80 100 120 0 20 40 60 80 100 120 RF IN input level V (RF) in (dBVEMF) RF IN input level V (RF) in (dBVEMF) 19 03-01-23 TA31275FN/ TA31275FNG Reference Data (with a broadband ceramic filter (280 k) used) Demodulation Output - Supply Voltage Characteristics 140 60 Dev = 60 kHz 120 100 Dev = 40 kHz 80 60 Dev = 20 kHz 40 VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter Waveform Shaping Output Duty Ratio - Supply Voltage Characteristics 58 56 54 52 50 48 Dev = 20 k 46 44 42 40 0 1 2 3 4 5 6 Dev = 40 k VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter Demodulation output Vod (mVrms) 20 0 1 2 3 Supply voltage VCC (V) Waveform shaping output duty ratio DR (%) Supply voltage VCC (V) Reference Data (with a narrowband ceramic filter (150 k) used) 12-dB SINAD Sensitivity - FM Modulation Characteristics -1 VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" SAW FILTER No SAW filter 10 8 6 4 2 0 -2 -4 -6 -8 AM Dev = 20 kHz Dev = 40 kHz VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" SAW FILTER No SAW filter 12-dB SINAD Sensitivity - Frequency Characteristics (AM and FM) (dBVEMF) -2 -3 12-dB SINAD sensitivity -4 -5 -6 -7 0 12-dB SINAD sensitivity 6 (dBVEMF) 1 2 3 4 5 -10 314.7 314.75 314.8 314.85 314.9 314.95 315 315.05 315.1 FM modulation (kHz) RF IN input frequency f (RF) in (MHz) 12-dB SINAD Sensitivity - Supply Voltage Characteristics 0 2.5 VCC = 5 V f (RF) in = 314.9 MHz Dev = 20 kHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter S Curve - Supply Voltage Characteristics VCC = 5 V fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter (dBVEMF) 50dBVEMF 2 AFOUT pin voltage (V) 40dBVEMF 1.5 30dBVEMF 1 10dBVEMF 12-dB SINAD sensitivity 20dBVEMF 0dBVEMF 0.5 0 314.4 314.55 314.7 314.85 315 315.15 315.3 315.45 Supply voltage VCC (V) RF IN input frequency f (RF) in (MHz) 20 03-01-23 TA31275FN/ TA31275FNG Reference Data (with a narrowband ceramic filter (150 k) used) S/N and AMR RF Input Characteristics (Dev = 20 k) 10 S+N 0 -10 -20 -30 -40 -50 -60 -20 N AMR VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter S/N and AMR RF Input Characteristics (Dev = 40 k) VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter S + N, N, AMR (dB) 0 20 40 60 80 100 120 S + N, N, AMR (dB) 0 20 40 60 80 100 120 RF IN input level V (RF) in (dBVEMF) RF IN input level V (RF) in (dBVEMF) Waveform Shaping Output Duty Ratio - Supply Voltage Characteristics 60 58 56 54 52 50 48 46 44 42 40 1 Dev = 40 2 3 4 5 6 Dev = 20 VCC = 5 V f (RF) in = 314.9 MHz V (RF) in = 20dBV fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBV LOBS = "H" No SAW filter Waveform shaping output duty ratio DR (%) Supply voltage VCC (V) 21 03-01-23 TA31275FN/ TA31275FNG Application Circuit (FSK) VCC C12 C22 6 pF 0.01 F 1000 pF C8 6 pF L5 33 nH SAW RF IN 3300 pF C18 27 nH L4 VCC 1000 pF C17 1000 pF 0.1 F C13 1 k 0.01 F R10 68 k C19 560 pF C11 > C15 = R5 1 k C10 C9 68 k R9 R6 68 k C20 22 20 19 18 17 16 15 14 13 21 24 23 LPF LPF AF RSSI REF AM/FM MIX GND1 RF CHARGE RF RF OUT IN OUT IN OUT DEC IN AM/FM RSSI Comparator x8 Detector VCC 10 F C109 33 k R100 0.1 F OSC VCC MIX IN LOBS OUT Lo 4 1 2 3 C2 0.1 F 47 pF VCC1 5 C3 IF IN IF DEC GND2 6 7 8 0.01 F C6 BS 9 QUAD VCC2 DATA 10 11 12 Detector 0.1 F R4 C7 C101 C15 1000 pF 100 k R8 120 k C103 C106 X1 40.7 MHz C107 10 pF 10 pF 3.6 k C108 VCC 0.1 F 0.01 F C100 56 pF R102 0.1 F VCC BPF VCC C5 R3 CF: SFELA10M7FA00-B0 (Murata Mfg. Co., Ltd.)--broadband (280 k) SFELA10M7JAA0-B0 (Murata Mfg. Co., Ltd.)--narrowband (150 k) LC: P-5DJ (Sumida Corporation) 4.7 k VCC R101 VCC VCC DATA 22 03-01-23 TA31275FN/ TA31275FNG Application Circuit (ASK) VCC 3300 pF C12 6 pF 0.01 F C8 6 pF SAW L5 33 nH RF IN R5 1 k C10 C9 C18 1 k R6 R9 0.01 F C19 560 pF R10 68 k 68 k 36 k To pin 9 0.1 F C15 1000 pF C13 C11( > C15) = 27 nH L4 C20 24 23 22 21 20 19 18 17 16 15 14 13 LPF LPF AF RSSI REF AM/FM MIX GND1 RF CHARGE RF RF OUT IN OUT OUT DEC IN IN AM/FM RSSI Comparator x8 Detector VCC 10 F C109 33 k R100 0.1 F C101 OSC VCC MIX IN Lo LOBS OUT 1 2 3 4 C2 0.1 F 47 pF IF IN IF DEC GND2 6 7 8 0.01 F C6 VCC1 5 BS 9 QUAD VCC2 DATA 10 11 12 MiR4 0.1 F 1000 pF VCC 100 k C3 0.1 F 120 k C103 C106 40.7 MHz C107 10 pF 10 pF 3.6 k C108 VCC 0.01 F R101 VCC VCC C7 To pin 19 VCC 10 F VCC C100 DATA BPF 56 pF X1 CF: SFELA10M7FA00-B0 (Murata Mfg. Co., Ltd.)--broadband (280 k) SFELA10M7JAA0-B0 (Murata Mfg. Co., Ltd.)--narrowband (150 k) 23 03-01-23 TA31275FN/ TA31275FNG Package Dimensions Weight: 0.09 g (typ.) 24 03-01-23 TA31275FN/ TA31275FNG RESTRICTIONS ON PRODUCT USE 000707EBA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 25 03-01-23 |
Price & Availability of TA31275FN
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