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| LITE-ON SEMICONDUCTOR MBR4030PT thru 4060PT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 40 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications A P G Q O PIN 1 2 3 TO-3P F E TO-3P MIN. MAX. 15.75 16.25 21.25 21.75 20.10 19.60 3.78 4.38 1.88 2.08 4.87 5.13 4.4TYP. 1.90 2.16 2.93 3.22 1.12 1.22 2.90 3.20 5.20 5.70 2.10 2.40 0.76 0.51 2.18 1.93 B K D H C N MECHANICAL DATA Case : TO-3P molded plastic Polarity : As marked on the body Weight : 0.2 ounces, 5.6 grams Mounting position : Any J I L PIN 1 PIN 3 L M PIN 2 CASE 20 TYP 10 TYP All Dimensions in millimeter DIM. A B C D E F G H I J K L M N O P Q MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% MBR 4030PT 30 21 30 MBR 4035PT 35 24.5 35 MBR 4040PT 40 28 40 40 400 10000 0.70 0.60 0.80 0.75 1.0 100 1.4 700 -55 to +150 -55 to +175 0.80 0.70 MBR 4045PT 45 31.5 45 MBR 4050PT 50 35 50 MBR 4060PT 60 42 60 CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig.1) SYMBOL UNIT V V V A VRRM VRMS VDC I(AV) @TC=125 C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) Voltage Rate of Change (Rated VR) IFSM dv/dt A V/us V IF =20A @ TJ =25 C Maximum Forward IF =20A @ TJ =125 C Voltage (Note 1) IF =40A @ TJ =25 C IF =40A @ TJ =125 C Maximum DC Reverse Current @TJ =25 C at Rated DC Blocking Voltage @TJ =125 C Typical Thermal Resistance (Note 2) Typical Junction Capacitance per element (Note 3) Operating Temperature Range Storage Temperature Range VF IR R0JC mA C/W pF CJ TJ TSTG NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction to Case. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. C C REV. 2, 01-Dec-2000, KTH11 RATING AND CHARACTERISTIC CURVES MBR4030PT thru MBR4060PT PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 40 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 400 30 300 20 200 10 RESISTIVE OR INDUCTIVE LOAD 100 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 25 50 75 100 125 150 175 1 2 5 10 20 50 100 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERISTICS 10 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) TJ = 125 C 1.0 10 MBR4030PT~ MBR4045PT 0.1 TJ = 75 C MBR4050PT ~ MBR4060PT 1.0 0.01 TJ = 25 C TJ = 25 C PULSE WIDTH 300ua 300us 0.001 0 20 40 60 80 100 120 140 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 CAPACITANCE , (pF) 1000 TJ = 25 C, f= 1MHz 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS REV. 2, 01-Dec-2000, KTH11 |
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