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 BPX 48 BPX 48 F
Silizium-Differential-Fotodiode Silicon Differential Photodiode
BPX 48 BPX 48 F
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm (BPX 48) und bei 920 nm (BPX 48 F) q Hohe Fotoempfindlichkeit q DIL-Plastikbauform mit hoher Packungsdichte q Doppeldiode mit extrem hoher Gleichmaigkeit Anwendungen Nachlaufsteuerung Kantenfuhrungen Weg- bzw. Winkelabtastungen Industrieelektronik "Messen/Steuern/Regeln"
Features q Especially suitable for applications from 400 nm to 1100 nm (BPX 48) and of 920 nm (BPX 48 F) q High photosensitivity q DIL plastic package with high packing density q Double diode with extremely high homogeneousness Application q Follow-up control q Edge control q Path and angle scanning q Industrial electronics q For control and drive circuits
q q q q q
Semiconductor Group
348
10.95
feof6638
feo06638
BPX 48 BPX 48 F
Typ Type BPX 48 BPW 48 F Grenzwerte Maximum Ratings Bezeichnung Description
Bestellnummer Ordering Code Q62702-P17-S1 Q62702-P305
Symbol Symbol
Wert Value - 40 ... + 80 230
Einheit Unit C C
Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation
Top; Tstg TS
VR Ptot
10 50
V mW
Kennwerte (TA = 25 C) fur jede Einzeldiode Characteristics (TA = 25 C) per single diode system Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Normlicht/standard light A, T = 2856 K, VR = 5 V, = 950 nm, Ee = 0.5 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Symbol Symbol BPX 48 Wert Value BPX 48 F Einheit Unit
S S
S max
24 ( 15) - 900
- 7.5 ( 4.0) 920
nA/Ix A nm
400 ... 1150 750 ... 1150 nm
A
1.54
1.54
mm2
Semiconductor Group
349
BPX 48 BPX 48 F
Kennwerte (TA = 25 C) fur jede Einzeldiode Characteristics (TA = 25 C) per single diode system Bezeichnung Description Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity = 850 nm = 950 nm Max. Abweichung der Fotoempfindlichkeit der Systeme vom Mittelwert Max. deviation of the system spectral sensitivity from the average Quantenausbeute Quantum yield = 850 nm = 950 nm Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Kurzschlustrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, l = 950 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 850 nm; Ip = 20 A Durchlaspannung, IF = 40 mA, E = 0 Forward voltage Symbol Symbol BPX 48 Wert Value BPX 48 F 0.7 x 2.2 mm 0.7 x 2.2 Einheit Unit
LxB LxW H
0.5
0.5
mm
60 10 ( 100)
60 10 ( 100)
Grad deg. nA
IR
S S
S
0.55 - 5
- 0.65 5
A/W %
Electrons Photon 0.8 - - 0.95
VO VO
330 ( 280) -
- 300 ( 280)
mV mV
ISC ISC t r, t f
24 - 500
- 7 500
A A ns
VF
1.3
1.3
V
Semiconductor Group
350
BPX 48 BPX 48 F
Kennwerte (TA = 25 C) fur jede Einzeldiode Characteristics (TA = 25 C) per single diode system Bezeichnung Description Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Normlicht/standard light A = 950 nm Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 950 nm Nachweisgrenze, VR = 10 V, = 950 nm Detection limit Symbol Symbol BPX 48 Wert Value BPX 48 F 25 - 2.6 pF mV/K 25 - 2.6 Einheit Unit
C0 TCV
TCI TCI NEP
0.18 - 1.0 x 10-13
- 0.2 1.0 x 10-13
%/K %/K W Hz cm * Hz W
D*
1.2 x 1012
1.2 x 1012
Directional characteristics Srel = f ()
Semiconductor Group
351
BPX 48 BPX 48 F
Relative spectral sensitivity BPX 48 Srel = f ()
Relative spectral sensitivity BPX 48 F Srel = f ()
Photocurrent IP = f (Ev), VR = 5 V Open-circuit-voltage VO = f (Ev) BPX 48
Photocurrent IP = f (Ee), VR = 5 V Open-circuit-voltage VO = f (Ee) BPX 48 F
Total power dissipation Ptot = f (TA)
Dark current IR = f (VR), E = 0
Capacitance C = f (VR), f = 1 MHz, E = 0
Dark current IR = f (TA), VR = 10 V
Semiconductor Group
352


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