 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.00.2 3.00.2 0.70.1 s Features q q q q Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking +0.2 0.45-0.1 15.60.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 3 15 300 150 -55 ~ +150 Unit V V V mA mW C C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Common emitter reverse transfer capacitance Transition frequency Noise figure Power gain (Ta=25C) Symbol VCBO VEBO hFE Cre fT NF PG * Conditions IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCE = 6V, IC = 1mA, f = 10.7MHz VCB = 6V, IE = -1mA, f = 200MHz VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA, f = 100MHz min 30 3 65 typ max 2.00.2 Unit V V 260 720 0.8 1.0 mV pF MHz 5.0 dB dB VBE 450 650 3.3 20 24 *h FE Rank classification C 65 ~ 160 D 100 ~ 260 hFE Rank 1 Transistor PC -- Ta 500 240 Ta=25C 200 25 25C Ta=75C 20 2SC3315 IC -- VCE 30 VCE=6V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 IB=100A 120 80A 60A 40A 40 20A 300 Collector current IC (mA) 400 -25C 15 200 80 10 100 5 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 IC/IB=10 300 hFE -- IC VCE=6V 1600 1400 1200 1000 fT -- I E Forward current transfer ratio hFE 250 200 Ta=75C 25C 100 -25C Transition frequency fT (MHz) VCE=10V 800 6V 600 400 200 150 Ta=75C 50 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB Common emitter reverse transfer capacitance Cre (pF) 2.5 2.4 Cre -- VCE IE=0 f=1MHz Ta=25C IC=1mA f=10.7MHz Ta=25C 30 f=100MHz Rg=50 Ta=25C PG -- IE VCE=10V 6V Collector output capacitance Cob (pF) 2.0 2.0 25 1.6 Power gain PG (dB) 0.3 1 3 10 30 100 20 1.5 1.2 15 1.0 0.8 10 0.5 0.4 5 0 1 3 10 30 100 0 0.1 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Emitter current IE (mA) 2 Transistor NF -- IE 12 f=100MHz Rg=50k Ta=25C 2SC3315 10 Noise figure NF (dB) 8 6 4 2 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) 3 |
Price & Availability of 2SC3315
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |