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| STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESHTM IGBT General features Type STGW40NC60WD VCES 600V IC VCE(sat) (Max)@ 25C @100C <2.5V 40A Low CRES / CIES ratio (no cross conduction susceptibility) High frequency operation Very soft ultra fast recovery anti parallel diode TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application. Internal schematic diagram Applications High frequency inverters, UPS Motor drivers HF, SMPS and PFC in both hard switch and resonant topologies Welding Order codes Part number STGW40NC60WD Marking GW40NC60WD Package TO-247 Packaging Tube June 2006 Rev 1 1/14 www.st.com 14 Contents STGW40NC60WD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGW40NC60WD Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC (1) IC ICL (1) (2) Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25C Collector current (continuous) at 100C Turn-off SOA minimum current Gate-emitter voltage Diode RMS forward current at TC=25C Total dissipation at TC = 25C Operating junction temperature - 55 to 150 Storage temperature Maximum lead temperature for soldering purpose (1.6mm from case, for 10sec.) 300 C C Value 600 70 40 230 20 15 250 Unit V A A A V A W VGE IF PTOT Tstg Tj TL 1. Calculated according to the iterative formula: T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 2. Vclamp = 480V , Tj = 150C, RG = 10, VGE= 15V Table 2. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Value 0.6 50 Unit C/W C/W 3/14 Electrical characteristics STGW40NC60WD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(SAT) VGE(th) ICES IGES gfs Static Parameter Test condictions Min. 600 2.1 1.9 3.75 2.5 Typ. Max. Unit V V V V A mA nA S Collector-emitter breakdown IC = 1mA, VGE = 0 voltage Collector-emitter saturation voltage Gate threshold voltage Collector-emitter leakage current (VCE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VGE= 15V, IC= 30A, Tj= 25C VGE= 15V, IC= 30A, Tj= 125C VCE= VGE, IC= 250A VGE = Max rating,Tc=25C VGE = Max rating, Tc=125C VGE = 20V , VCE = 0 VCE = 15V, IC= 30A 5.75 50 3 100 20 Table 4. Symbol Cies Coes Cres Qg Qge Qgc ICL Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Turn-off SOA Minimum current Test condictions Min. Typ. 2900 298 59 126 16 46 230 Max. Unit pF pF pF VCE = 25V, f = 1 MHz, VGE= 0 VCE = 390V, IC = 20A, VGE = 15V, (see Figure 16) Vclamp = 480V , Tj = 150C RG = 10, VGE= 15V nC nC nC A 4/14 STGW40NC60WD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay timE Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test condictions VCC = 390V, IC = 30A , RG= 10 VGE= 15V, Tj= 25C (see Figure 15) VCC = 390V, IC = 30A , RG= 10 VGE= 15V, Tj= 125C (see Figure 15) Vcc = 390V, IC = 30A, RGE = 10 , VGE =15V, TJ=25C (see Figure 15) Vcc = 390V, IC = 30A, RGE=10 , VGE =15V, Tj=125 C (see Figure 15) Min. Typ. 33 12 260 32 14 2300 26 168 36 54 213 67 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 6. Symbol Eon (1) Eoff(2) Ets Eon Eoff (2) Ets (1) Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test condictions VCC = 390V, IC = 30A , RG= 10 VGE= 15V, Tj= 25C (see Figure 15) VCC = 390V, IC = 30A , RG= 10 VGE= 15V, Tj= 125C (see Figure 15) Min Typ. 302 394 651 553 750 1303 Max Unit J J J J J J 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics STGW40NC60WD Table 7. Symbol Vf trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test condictions If = 3.5A If = 3.5A, Tj = 125C If = 20A, VR = 40 V, Tj = 25C, di/dt = 100A/s (see Figure 18) If = 20A, VR = 40V, di/dt =100A/s, Tj =125C (see Figure 18) Min Typ. 1.4 1.1 45 56 2.5 100 290 5.8 Max 1.9 Unit V V ns nC A ns nC A 6/14 STGW40NC60WD Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Collector-emitter on voltage vs collector current Figure 6. Normalized gate threshold vs temperature 7/14 Electrical characteristics Figure 7. Normalized breakdown voltage vs temperature Figure 8. STGW40NC60WD Gate charge vs gate-emitter voltage Figure 9. Capacitance variations Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 8/14 STGW40NC60WD Figure 13. Thermal impedance Electrical characteristics Figure 14. Turn-off SOA 9/14 Test circuit STGW40NC60WD 3 Test circuit Figure 16. Gate charge test circuit Figure 15. Test circuit for inductive load switching Figure 17. Switching waveforms Figure 18. Diode recovery times waveform 10/14 STGW40NC60WD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGW40NC60WD TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/14 STGW40NC60WD Revision history 5 Revision history Table 8. Date 06-Jun-2006 Revision history Revision 1 First release Changes 13/14 STGW40NC60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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