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| 2SK1405 Silicon N-Channel MOS FET Nov. 1, 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current Built-in fast diode (trr = 140 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1405 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 30 15 60 15 60 150 -55 to +150 Unit V V A A A W C C 2 2SK1405 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 600 30 -- -- 2.0 -- 9 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.35 14 3150 780 110 35 120 240 100 1.0 140 Max -- -- 10 250 3.0 0.50 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0, diF/dt = 100 A/s I D = 8 A, VGS = 10 V, RL = 3.75 Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 V *1 I D = 8 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1405 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 100 30 Drain Current ID (A) 10 3 1 0.3 0.1 0.03 0.05 0 50 100 Case Temperature TC (C) Typical Output Characteristics 20 10 V 16 Drain Current ID (A) Pulse Test 12 4.5 V Drain Current ID (A) 6V 5V 16 20 VDS = 10 V Pulse Test 150 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Ta = 25C ea ar ) his (on t in R DS n DC tio by ra ed e it Op Op lim PW er is a Maximum Safe Operation Area 1 10 0 s 0 s 1 m s n (T C 40 = 10 tio 1 m s( = Sh 20 ot 25 C ) pu ) lse 12 8 8 4 VGS = 4 V 4 TC = 75C 25C -25C 0 4 12 16 8 20 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0 2 6 8 4 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) 10 Pulse Test 8 20 A Static Drain to Source on State Resistance RDS (on) () 5 Pulse Test 2 1 0.5 0.2 0.1 VGS = 10, 15 V 6 4 10 A ID = 5 A 2 0 4 10 2 6 8 Gate to Source Voltage VGS (V) 0.05 1 2 5 20 50 10 Drain Current ID (A) 100 4 2SK1405 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Pulse Test 1.6 Forward Transfer Admittance yfs (S) 2.0 50 Forward Transfer Admittance vs. Drain Current 20 10 5 2 1 0.5 0.2 TC = -25C 25C 75C 1.2 10 A 0.8 ID = 20 A VGS = 10 V 5A 0.4 VDS = 10 V Pulse Test 0.5 1 2 5 10 Drain Current ID (A) 20 0 -40 40 0 80 120 Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time 160 Typical Capacitance vs. Drain to Source Voltage 10,000 Ciss 500 Reverse Recovery Time trr (ns) 200 Capacitance C (pF) 100 50 1,000 Coss 100 20 10 5 0.2 di/dt = 100 A/s, VGS = 0 Ta = 25C Pulse Test 0.5 10 1 5 2 Reverse Drain Current IDR (A) Dynamic Input Characteristics 20 VGS = 0 f = 1 MHz 10 0 Crss 20 50 10 30 40 Drain to Source Voltage VDS (V) Switching Characteristics 1,000 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V VGS 20 Gate to Source Voltage VGS (V) Switching Time t (ns) 500 td (off) 200 tf 100 50 tr td (on) 800 16 600 12 400 VDS ID = 15 A VDD = 400 V 250 V 100 V 8 20 10 5 0.2 VGS = 10 V, PW = 2 s . duty < 1%, VDD = 30 V . = 0.5 2 5 10 1 Drain Current ID (A) 20 200 4 0 0 40 120 160 80 Gate Charge Qg (nc) 200 5 2SK1405 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 VGS = 0, -5 V 10 V 4 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 1.0 TC = 25C ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM e 0.05 0.03 0.01 10 0.02 0.01 1S hot Puls T 1m 10 m 100 m Pulse Width PW (s) PW D = PW T 100 1 10 Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T. RL Vin 10 V 50 Vin Vout VDD . = 30 V . td (on) 10% 10% 10% 90% td (off) 90% tr tf 6 2SK1405 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 7 |
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