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 SUP60N10-16L
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
100
FEATURES
rDS(on) (W) ID (A)
60 56
0.016 @ VGS = 10 V 0.018 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized
APPLICATIONS
D DC/DC Primary Side Switch
TO-220AB
D
G DRAIN connected to TAB
GDS Top View SUP60N10-16L
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
100 "20 60 35 100 40 80 150b - 55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (Free Air) Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material).
Symbol
RthJA RthJC
Limit
62.5 1.0
Unit
_C/W
Document Number: 71928 S-03600--Rev. B, 31-Mar-03
www.vishay.com
1
SUP60N10-16L
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C VDS = 80 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 100 0.0125 0.014 0.016 0.018 0.030 0.040 S W 100 V 1 3 "100 1 50 250 A m mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 50 V, RL = 0.83 W ID ^ 60 A, VGEN = 10 V, RG = 2.5 W VDS = 50 V, VGS = 10 V, ID = 60 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 3820 450 210 73 15 20 1.5 12 90 55 130 25 135 85 195 ns W 110 nC pF
Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms , m IF = 60 A, VGS = 0 V 1.0 62 3.1 0.10 60 100 1.5 100 5 0.25 A V ns A mC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
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2
Document Number: 71928 S-03600--Rev. B, 31-Mar-03
SUP60N10-16L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120 VGS = 10 thru 6 V 5V 100 I D - Drain Current (A) I D - Drain Current (A) 90 120
Transfer Characteristics
80
60
60
40 TC = 125_C 20 25_C - 55_C
30 4V 0 0 2 4 6 8 10 3V
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transconductance
160 TC = - 55_C r DS(on) - On-Resistance ( W ) 0.025 0.030
On-Resistance vs. Drain Current
g fs - Transconductance (S)
120
25_C
0.020 VGS = 4.5 V VGS = 10 V
125_C 80
0.015
0.010
40
0.005
0 0 10 20 30 40 50 60 70 80 90
0.000 0 20 40 60 80 100
ID - Drain Current (A)
ID - Drain Current (A)
Capacitance
6000 10
Gate Charge
V GS - Gate-to-Source Voltage (V)
5000 C - Capacitance (pF) Ciss 4000
8
VDS = 50 V ID = 60 A
6
3000
4
2000
1000
Crss
2
Coss
0 0 20 40 60 80 100
0 0 10 20 30 40 50 60 70 80
VDS - Drain-to-Source Voltage (V) Document Number: 71928 S-03600--Rev. B, 31-Mar-03
Qg - Total Gate Charge (nC) www.vishay.com
3
SUP60N10-16L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100
Source-Drain Diode Forward Voltage
1.5
10
TJ = 150_C
TJ = 25_C
1.0
0.5
0.0 - 50
- 25
0
25
50
75
100
125
150
175
1 0
0.3
0.6
0.9
1.2
TJ - Junction Temperature (_C)
VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs. Junction Temperature
130 125 ID = 10 mA V (BR)DSS (V) 120 115 110 105 100 95 - 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
www.vishay.com
4
Document Number: 71928 S-03600--Rev. B, 31-Mar-03
SUP60N10-16L
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
80 70 60 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 100 10 ms 100 ms 10 Limited by rDS(on) 1000
Safe Operating Area
1 ms 10 ms 100 ms dc
1
TC = 25_C Single Pulse
TC - Ambient Temperature (_C)
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71928 S-03600--Rev. B, 31-Mar-03
www.vishay.com
5


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