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| SUD50N03-11 New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.011 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 50 43 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-11 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 50 37 Unit V A 100 50 62.5c 7.5b -55 to 175 W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Junction-to-Lead Notes a. Package Limited. b. Surface Mounted on 1" x1" FR4 Board, t v 10 sec. c. See SOA curve for voltage derating. Document Number: 71187 S-01329--Rev. B, 12-Jun-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Symbol RthJA RthJC RthJL Typical 17 50 2 4 Maximum 20 60 2.4 4.8 Unit _C/W _C/W 1 SUD50N03-11 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 5 V VGS = 10 V, ID = 25 A Drain-Source On-State Resistanceb DiS OS Ri rDS(on) VGS = 5 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 15 A Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 10 0.014 50 0.009 0.011 0.018 0.017 S W 30 V 0.8 "100 1 50 nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0 3 W V, 0.3 ID ^ 50 A, VGEN = 10 V RG = 2 5 W A V, 2.5 VDS = 15 V, VGS = 5 V, ID = 50 A V V VGS = 0 V, VDS = 25 V F = 1 MH V V, MHz 1130 400 175 12 4 4.5 8 10 18 6 12 15 ns 30 9 20 nC C pF F Source-Drain Diode Ratings and Characteristic (TC = 25_C) Continuous Current Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time IS ISM VSD trr IF = 100 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 30 50 A 80 1.5 50 V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 71187 S-01329--Rev. B, 12-Jun-00 SUD50N03-11 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 8 V 7V 160 I D - Drain Current (A) 6V 5V I D - Drain Current (A) 80 25_C 60 125_C TC = -55_C 100 Vishay Siliconix Transfer Characteristics 120 80 4V 40 40 3V 2V 20 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 60 TC = -55_C 50 g fs - Transconductance (S) 25_C r DS(on)- On-Resistance ( W ) 125_C 40 0.03 0.04 On-Resistance vs. Drain Current 30 0.02 VGS = 4.5 V 20 VGS = 10 V 0.01 10 0 0 20 40 60 80 100 0 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 2000 10 Gate Charge 1600 C - Capacitance (pF) Ciss 1200 V GS - Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 50 A 6 800 Coss 400 Crss 4 2 0 0 5 10 15 20 25 30 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71187 S-01329--Rev. B, 12-Jun-00 www.vishay.com S FaxBack 408-970-5600 3 SUD50N03-11 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 25 A r DS(on)- On-Resistance ( W ) (Normalized) 1.6 I S - Source Current (A) TJ = 150_C 100 Source-Drain Diode Forward Voltage 1.2 TJ = 25_C 10 0.8 0.4 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 60 500 Limited by rDS(on) 50 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms 10 10 ms 100 ms 1 TC = 25_C Single Pulse 1s dc Safe Operating Area 40 30 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 71187 S-01329--Rev. B, 12-Jun-00 1 10 30 4 |
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