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STD1NK60 - STD1NK60-1 STQ1HNK60R
N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESHTMPower MOSFET
TYPE STD1NK60 STD1NK60-1 STQ1HNK60R
s s s s s
VDSS 600 V 600 V 600 V
RDS(on) < 8.5 < 8.5 < 8.5
ID 1A 1A 0.4 A
Pw 30 W 30 W 3W
1
3 2
3 1
TYPICAL RDS(on) = 8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK
IPAK
DPAK
DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
TO-92 (Ammopack)
TO-92
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) s LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) s LOW POWER BATTERY CHARGERS
s
ORDERING INFORMATION
SALES TYPE STD1NK60T4 STD1NK60-1 STQ1HNK60R STQ1HNK60R-AP MARKING D1NK60 D1NK60 1HNK60R 1HNK60R PACKAGE DPAK IPAK TO-92 TO-92 PACKAGING TAPE & REEL TUBE BULK AMMOPAK
June 2003
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
STD1NK60 STD1NK60-1
Value
STQ1HNK60R
Unit
VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 1.0 0.63 4 30 0.24
600 600 30 0.4 0.25 1.6 3 0.025 3 -55 to 150
V V V A A A W W/C V/ns C
( ) Pulse width limited by safe operating area (1) ISD 1.0A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX.
THERMAL DATA
DPAK / IPAK Rthj-case Rthj-amb Rthj-lead Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Junction-lead Max Maximum Lead Temperature For Soldering Purpose 275 4.16 100 120 40 260 TO-92 C/W C/W C/W C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value DPAK / IPAK 1 25 TO-92 A mJ Unit
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V VDS = VGS, ID = 250A VGS = 10V, ID = 0.5 A 2.25 3 8 Min. 600 1 50 100 3.7 8.5 Typ. Max. Unit V A A nA V
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 0.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1 156 23.5 3.8 Max. Unit S pF pF pF
SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300 V, ID = 0.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 1.0 A, VGS = 10V, RG = 4.7 Min. Typ. 6.5 5 7 1.1 3.4 10 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 0.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 1.0 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 19 25 24 25 44 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, VGS = 0 ISD = 1.0 A, di/dt = 100A/s VDD = 25V, Tj = 150C (see test circuit, Figure 5) 229 377 3.3 Test Conditions Min. Typ. Max. 1 4 1.6 Unit A A V ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
Safe Operating Area For DPAK/IPAK Thermal Impedance For DPAK/IPAK
Safe Operating Area For TO-92
Thermal Impedance For TO-92
Output Characteristics
Transfer Characteristics
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature
Max Id Current vs Tc
Maximum Avalanche Energy vs Temperature
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
A
C C2
L2 D
B3
B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o
DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8
o
TYP.
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.8 0.024 0
o
0.039 0o
P032P_B
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-92 MECHANICAL DATA
mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.094 0.044 0.50 0.085 0.036 0.016 5 TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022 inch
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618
0.641
MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1
* on sales type
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-92 AMMOPACK
mm. MIN. TYP MAX. 4.8 3.8 1.6 2.3 0.458 12.5 5.65 2.44 -2 17.5 5.7 8.5 18.5 15.5 3.8 16 4 18 6 9 12.7 6.35 2.54 0.505 12.9 7.05 2.94 2 19 6.3 9.25 0.5 20.5 16.5 25 4.2 0.9 11 3 -1 1 0.11 -0.04 0.04 0.15 0.157 0.72 0.61 0.63 0.018 0.49 0.22 0.09 -0.08 0.69 0.22 0.33 0.71 0.23 0.35 0.5 0.25 0.1 MIN. inch TYP. MAX. 0.19 0.15 0.06 0.09 0.02 0.51 0.27 0.11 0.08 0.74 0.24 0.36 0.02 0.80 0.65 0.98 0.16 0.035 0.43
DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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