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PD - 90888C
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM9130 100K Rads (Si) IRHM93130 300K Rads (Si) RDS(on) 0.3 0.3 ID -11A -11A
IRHM9130 100V, P-CHANNEL
RAD-Hard HEXFET TECHNOLOGY
TM (R)
International Rectifier's RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-254AA
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -11 -7.0 -44 75 0.6 20 190 -11 7.5 -10 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
300 ( 0.063 in. (1.6mm) from case for 10s) 9.3 (typical)
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1
02/18/03
IRHM9130
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units
-- -0.1 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.3 0.325 -4.0 -- -25 -250 -100 100 45 10 25 30 50 70 70 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID =-1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, I D = -7.0A VGS = -12V, ID = -11A VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -7.0A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -11A VDS = -50V VDD = -50V, ID = -11A, VGS =-12V, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage -100 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance -- VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 2.5 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1200 300 74
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -11 -44 -3.0 250 0.84
Test Conditions
A
V nS C
Tj = 25C, IS = -11A, VGS = 0V Tj = 25C, IF = -11A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max
-- -- -- -- 1.67 0.21 -- -- 30
Units
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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Radiation Characteristics Pre-Irradiation
IRHM9130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254AA) Diode Forward Voltage
100K Rads(Si)1 300K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20 V VDS =-80V, VGS =0V VGS = -12V, ID =-7.0A VGS = -12V, ID =-7.0A VGS = 0V, IS = -11A
Min -100 -2.0 -- -- -- -- -- --
Max -- -4.0 -100 100 -25 0.3 0.3 -3.0
Min -100 -2.0 -- -- -- -- -- --
Max -- -5.0 -100 100 -25 0.3 0.3 - 3.0
1. Part number IRHM9130 2. Part number IRHM93130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LE T MeV/(mg/cm)) 28 36.8 59.9 Energy (MeV) 285 305 345 Range (m) @VGS=0V Cu Br I 43 39 32.8 -100 -100 -60 @VGS=5V -100 -100 -- VD S(V) @VGS=10V -100 -70 -- @VGS=15V -70 -50 -- @VGS=20V -60 -40 --
-120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM9130
Pre-Irradiation
100
10
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
10
-5.0V
-5.0V
1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
TJ = 25 C TJ = 150 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -11A
Drain-to-Source Current (A)
2.0
1.5
10
1.0
--I D ,
0.5
1 5 6 7 8 9
V DS = -50V 20s PULSE WIDTH 10 11 12
-VGS, Gate-to-Source Voltage (V)
13
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs.Temperature
4
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Pre-Irradiation
IRHM9130
2000
-VGS , Gate-to-Source Voltage (V)
1600
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -11A
16
VDS = -80V VDS =-50V VDS =-20V
C, Capacitance (pF)
Ciss
1200
12
800
8
C oss
400
4
C rss
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
40 50 30 60
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
10
TJ = 25 C
1
-ID , Drain Current (A) I
TJ = 150 C
100
100us
10
0.1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0 5.0 1
TC = 25 C TJ = 150 C Single Pulse
1 10
1ms 10ms
100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHM9130
Pre-Irradiation
12
VDS VGS RG
RD
10
D.U.T.
+
-ID , Drain Current (A)
8
6
VGS Pulse Width 1 s Duty Factor 0.1 %
4
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
2
VGS 10%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
90% VDS
Fig 9. Maximum Drain Current Vs. CaseTemperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.001 0.01
PDM t1 t2 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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-
V DD
Pre-Irradiation
IRHM9130
VDS
L
400
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T IA S D R IV E R
0 .0 1
VD D A
-2 0 V VGS
300
ID -4.9A -7.0A BOTTOM -11A TOP
tp
200
15V
Fig 12a. Unclamped Inductive Test Circuit
100
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-12V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
7
IRHM9130
Pre-Irradiation
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25V, starting TJ = 25C, L=3.1mH Peak I L = -11A, VGS =-12V ISD -11A, di/dt -480A/s, VDD -100V, TJ 150C
Case Outline and Dimensions -- TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249]
0.12 [.005] 1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
22.73 [.895] 21.21 [.835]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B R 1.52 [.060]
C
17.40 [.685] 16.89 [.665]
0.84 [.033] MAX.
4.82 [.190] 3.81 [.150] 3.81 [.150]
4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A
3X 3.81 [.150] 2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
2X
NOT ES : 1. 2. 3. 4. DIMENSIONING & TOLERANCING PE R ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. CONT ROLLING DIMENSION: INCH. CONF ORMS T O JEDEC OUT LINE T O-254AA.
PIN ASSIGNMENT S 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03
8
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