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PD -91750A
IRG4IBC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* * * * Very Low 1.66V votage drop 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). * IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes * Tighter parameter distribution * Industry standard Isolated TO-220 FullpakTM outline
C
Fast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
n-cha nn el
Benefits
* Simplified assembly * Highest efficiency and power density * HEXFREDTM antiparallel Diode minimizes switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM Visol VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to CaseU Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 14.3 7.7 64 64 6.5 64 2500 20 34 14 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight
Typ.
--- --- --- 2.0 (0.07)
Max.
3.7 5.1 65 ---
Units
C/W g (oz)
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1
4/24/00
IRG4IBC20FD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.72 VCE(on) Collector-to-Emitter Saturation Voltage -- 1.66 -- 2.06 -- 1.76 VGE(th) Gate Threshold Voltage 3.0 -- VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -11 gfe Forward Transconductance T 2.9 5.1 ICES Zero Gate Voltage Collector Current -- -- -- -- VFM Diode Forward Voltage Drop -- 1.4 -- 1.3 IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, I C = 1.0mA 2.0 IC = 9.0A VGE = 15V -- V IC = 16A See Fig. 2, 5 -- IC = 9.0A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 9.0A 250 A VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Diode Peak Reverse Recovery Current -- -- Diode Reverse Recovery Charge -- -- Diode Peak Rate of Fall of Recovery -- During tb -- Typ. 27 4.2 9.9 43 20 240 150 0.25 0.64 0.89 41 22 320 290 1.35 7.5 540 37 7.0 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 40 IC = 9.0A 6.2 nC VCC = 400V See Fig. 8 15 VGE = 15V -- TJ = 25C -- ns IC = 9.0A, VCC = 480V 360 VGE = 15V, RG = 50 220 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 18 1.3 -- TJ = 150C, See Fig. 11, 18 -- ns IC = 9.0A, VCC = 480V -- VGE = 15V, RG = 50 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 IF = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 VR = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt = 200As -- A/s TJ = 25C See Fig. -- TJ = 125C 17
2
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IRG4IBC20FD
10.0
For both:
8.0
LOAD CURRENT (A)
D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified P ow e r Dis sip ation = 9.5 W
S q u a re w a v e : 6 0% of rate d volta ge
6.0
4.0
I
2.0
Id e a l d io d e s
0.0 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 25 o C TJ = 150 o C
10
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
TJ = 150 o C
10
TJ = 25 oC
1 1
V = 15V 20s PULSE WIDTH
GE 10
1 5 6 7 8 9
V = 50V 5s PULSE WIDTH
CC 10 11 12 13 14
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4IBC20FD
16 3.0
12
VCE , Collector-to-Emitter Voltage(V)
V = 15V 80 us PULSE WIDTH
GE
IC = 18 A
Maximum DC Collector Current(A)
8
2.0
IC = 9.0 A 9A
4
IC = 4.5 A
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 1
P DM t1 t2 10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC20FD
1000
800
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 9.0A
16
C, Capacitance (pF)
600
Cies
12
400
8
200
C oes C res
4
0 1 10 100
0 0 5 10 15 20 25 30
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.90
Total Switching Losses (mJ)
0.86
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C 0.88 I C = 9.0A
10
RG = 50Ohm VGE = 15V VCC = 480V
IC = 18 A IC = 9.0 A 9
1
0.84
IC = 4.5 A
0.82
0.80
0.78 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG , Gate Resistance (Ohm)
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4IBC20FD
3.0
Total Switching Losses (mJ)
2.0
1.5
I C , Collector Current (A)
RG TJ VCC 2.5 VGE
= 50Ohm = 150 C = 480V = 15V
100
VGE = 20V T J = 125 o C
10
1.0
0.5
0.0 0 4 8 12 16
SAFE OPERATING AREA
1 20 1 10 100 1000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )
10
TJ = 1 50 C TJ = 1 25 C TJ = 25 C
1
0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4IBC20FD
100 100
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
80
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
IF = 16 A
t rr - (ns)
60
I F = 8 .0A
I IR R M - (A )
I F = 1 6A
10
40
IF = 8 .0 A I F = 4.0 A
I F = 4 .0 A
20
0 100
d i f /d t - (A / s)
1000
1 100
1000
di f /dt - (A /s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
400
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
300
d i(re c )M /d t - (A / s )
Q R R - (n C )
I F = 16 A
200
I F = 4.0 A
1000
IF = 8 .0 A I F = 1 6A
I F = 8 .0A
100
IF = 4.0 A
0 100 100 100
di f /dt - (A /s)
1000
1000
d i f /d t - (A / s )
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4IBC20FD
Same ty pe device as D .U.T.
80% of Vce
430F D .U .T.
Vge VC 90% 10%
90%
td(off)
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
10% IC 5% t d(on)
tr Eon E ts = (Eon +Eoff )
tf t=5s Eoff
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id ddt Ic t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t1
t4 V d idIct dt Vd d t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4IBC20FD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000 F 100 V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4IBC20FD
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. U t = 60s, f = 60Hz
Notes:
Case Outline TO-220 FULLPAK
1 0 .6 0 (.4 1 7 ) 1 0 .4 0 (.4 0 9 ) o 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) -A 3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 )
2 .8 0 (.1 1 0 ) 2 .6 0 (.1 0 2 ) L E A D A S S IG N M E N T S LEAD ASSIGMENTS 1-G 1- GATE A T E 2 - D R A IN 2- COLLECTOR 3 - SOUR 3- EMITTER C E
7 .1 0 (.2 8 0 ) 6 .7 0 (.2 6 3 )
1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 )
1 .1 5 (.0 4 5) M IN . 1 2 3
NOTES : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4.5 M , 1 9 8 2 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 .3 0 (.1 3 0 ) 3 .1 0 (.1 2 2 ) -B1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D
A 1 .4 0 (.0 5 5 ) 3X 1 .0 5 (.0 4 2 ) 2 .5 4 (.1 0 0 ) 2X 0 .9 0 (.0 35 ) 3 X 0 .7 0 (.0 28 ) 0 .2 5 (.0 1 0 ) M AM B 3X 0 .4 8 (.0 1 9 ) 0 .4 4 (.0 1 7 )
B
2 .8 5 (.1 1 2 ) 2 .6 5 (.1 0 4 )
M IN IM U M C R E E P A G E D IS T A N C E B E T W E E N A -B -C -D = 4 .8 0 (.1 89 )
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