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| PD- TBD IRFC37N50A HEXFET(R) Power MOSFET Die in Wafer Form D G S 500 V Size 7.3 RDS(on) = 0.141 5" Wafer Electrical Characteristics (Wafer Form) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 500V Min. 0.141 Max. 2.3V Min. 18A Max. 10A Max. 150C Max. Test Conditions VGS = 0V, I D = 250A VGS = 10V, ID = 20A VDS = VGS, ID = 250A VDS = 500V, VGS = 0V, TJ = 25C VGS = 30V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment: Recommended Die Attach Conditions Reference Standard IR packaged part (for design) : IRFPS37N50A Cr-NiV-Ag ( 1kA-2kA-2.5kA ) 99% Al, 1% Si (0.004mm) 0.314" x 0.468" (7.96mm x 11.89 mm) 125mm with 100 flat 0.375mm 0.020mm 01-5339 0.084 mm 0.51mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline 11/1/99 |
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