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| 7MBR25NE120 IGBT MODULE 1200V / 25A / PIM IGBT Modules Features * High Speed Switching * Voltage Drive * Low Inductance Module Structure * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake Collector power disspation Repetitive peak reverse voltage Average forward current Surge current Repetitive peak reverse voltage Non-Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) It (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC IF(AV) IFSM VRRM VRSM IO IFSM Tj Tstg Viso Condition Ra ting 1200 20 25 50 25 200 1200 20 15 30 120 1200 1 50 1600 1700 25 320 512 +150 -40 to +125 AC 2500 1.7 *1 Unit V V A A A W V V A A W V A A V V A A As C C V N*m Inverter Continuous 1ms 1 device Continuous 1ms 1 device 10ms Converter 50Hz/60Hz sine wave Tj=150C, 10ms Tj=150C, 10ms Operating junction temperature Storage temperature Isolation voltage Mounting screw torque AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N*m (M4) IGBT Module Electrical characteristics (Tj=25C unless without specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Collector-Emitter voltage Input capacitance Switching time Symbol ICES IGES VGE(th) VCE(sat) -VCE Cies ton tr toff tf trr ICES IGES VCE(sat) ton tr toff tf IRRM trr VFM IRRM Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=25mA VGE=15V, Ic=25A -Ic=25A VGE=0V, VCE=10V, f=1MHz VCC=600V IC=25A VGE=15V RG=51 ohm IF=25A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=15A, VGE=15V VCC=600V IC=15A VGE=15V RG=82 ohm VR=1200V IF=25A VR=1600V Min. 7MBR25NE120 Characteristics Typ. Max. 1.0 20 4.5 7.5 3.3 3.0 4000 1.2 0.6 1.5 0.5 0.35 1.0 0.1 3.3 0.8 0.6 1.5 0.5 1 0.6 1.4 1.0 Unit mA A V V V pF s s s s s mA A V s s s s mA s V mA Inverter (IGBT) Brake (FWD) Converter Brake (IGBT) Item Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Switching time Reverse current Reverse recovery time Forward voltage Reverse current Thermal Characteristics Symbol Condition Min. Inverter IGBT Inverter FRD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 0.63 1.70 1.04 3.40 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic * NLU (Over current Limiting circuit) IGBT Module Characteristics (Representative) Inverter Collector current vs. Collector-Emitter voltage Tj=25C 60 60 7MBR25NE120 Collector current vs. Collector-Emitter voltage Tj=125C 50 50 Collector current : Ic [A] 30 Collector current : Ic [A] 0 1 2 3 4 5 40 40 30 20 20 10 10 0 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C 10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25 10 8 8 Collector-Emitter voltage : 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=51 ohm, VGE=15V, Tj=25C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time vs. Collector current Vcc=600V, RG=51 ohm, VGE=15V, Tj=125C 100 Switching time : ton, tr, toff, tf [n sec.] 0 10 20 30 40 50 100 10 Collector current : Ic [A] 10 0 10 20 30 40 50 Collector current : Ic [A] IGBT Module 7MBR25NE120 Switching time vs. RG Vcc=600V, Ic=25A, VGE=15V, Tj=25C 1000 Dynamic input characteristics Tj=25C 25 Switching time : ton, tr, toff, tf [n sec.] 600 15 400 10 200 5 100 0 100 Gate resistance : RG [ohm] 0 100 200 300 400 Gate charge : Qg [nC] 0 500 Forward current vs. Forward voltage VGE=0V 60 Reverse recovery characteristics trr, Irr, vs. IF 50 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 100 Forward current : IF [A] 40 30 10 20 10 0 0 1 2 3 4 5 Forward voltage : VF [V] 1 0 10 20 30 40 50 Forward current : IF [A] Transient thermal resistance 250 Reversed biased safe operating area > < +VGE=15V, -VGE < 15V, Tj = 125C, RG = 51 ohm = Thermal resistance : Rth (j-c) [C/W] 200 1 Collector current : Ic [A] 150 0.1 100 50 0.01 0.001 0.01 Pulse width : PW [sec.] 0.1 1 0 0 200 400 600 800 1000 1200 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] 1000 Collector-Emitter voltage : VCE [V] 800 20 IGBT Module 7MBR25NE120 Switching loss vs. Collector current Vcc=600V, RG=51 ohm, VGE=15V 10 10 Switching loss : Eon, Eoff, Err [mJ /cycle] 8 Capacitance vs. Collector-Emitter voltage Tj=25C 6 Capacitance : Cies, Coes, Cres [nF] 1 4 2 0.1 0 0 10 20 30 40 50 0 5 10 15 20 25 30 35 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Converter Diode Forward current vs. Forward voltage 30 25 Forward current : IF [A] 20 15 10 5 0 0 0.5 1.0 Forward voltage : VF [V] 1.5 2.0 IGBT Module Brake 7MBR25NE120 Collector current vs. Collector-Emitter voltage Tj=25C Collector current vs. Collector-Emitter voltage Tj=125C 30 30 Collector current : Ic [A] 20 Collector current : Ic [A] 0 1 2 3 4 5 20 10 10 0 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C 10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25 10 8 8 Collector-Emitter voltage : 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=82 ohm, VGE=15V, Tj=25C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. Collector current Vcc=600V, RG=82 ohm, VGE=15V, Tj=125C 100 100 10 0 10 Collector current : Ic [A] 20 30 10 0 10 Collector current : Ic [A] 20 30 IGBT Module 7MBR25NE120 Switching time vs. RG Vcc=600V, Ic=15A, VGE=15V, Tj=25C 1000 Dynamic input characteristics Tj=25C 25 Switching time : ton, tr, toff, tf [n sec.] Collector-Emitter voltage : VCE [V] 800 20 1000 600 15 400 10 200 5 100 0 100 Gate resistance : RG [ohm] 0 50 100 150 200 250 300 Gate charge : Qg [nC] 0 Reversed biased safe operating area < > +VGE=15V, -VGE = 15V, Tj < 125C, RG = 82 ohm = 6 160 Switching loss : Eon, Eoff, Err [mJ /cycle] 5 Switching loss vs. Collector current Vcc=600V, RG=82 ohm, VGE=15V 120 Collector current : Ic [A] 100 4 80 3 60 2 40 20 1 0 0 200 400 600 800 1000 Collector-Emitter voltage : VCE [V] 1200 0 0 5 10 15 20 25 30 Collector current : Ic [A] Capacitance vs. Collector-Emitter voltage Tj=25C 10 Capacitance : Cies, Coes, Cres [nF] 1 0.1 0 5 10 15 20 25 30 35 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] IGBT Module Outline Drawings, mm 7MBR25NE120 Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com |
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