![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application TO-220AB High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features * * * * Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode 3 1 2 3 1 1. Gate 2. Source (Flange) 3. Drain 2 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK213 Symbol VDSX Ratings 140 Unit V -------------------------------------------------------------------------------------- ---------- 2SK214 ------ 160 ---------- 2SK215 ------ 180 ---------- 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID IDR Pch Pch* Channel temperature Storage temperature Tch Tstg ------ 200 15 500 500 1.75 30 150 -45 to +150 V mA mA W W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * Value at TC = 25 C 2SK213, 2SK214, 2SK215, 2SK216 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK213 Symbol V(BR)DSX Min 140 160 180 200 V(BR)GSS VGS(on) VDS(sat) |yfs| Ciss Crss 15 Typ -- -- -- -- -- Max -- -- -- -- -- Unit V V V V V IG = 10 A, VDS = 0 ID = 10 mA, VDS = 10 V * ID = 10 mA, VGD = 0 * ID = 10 mA, VDS = 20 V * ID = 10 mA, VDS = 10 V, f = 1 MHz Test conditions ID = 1 mA, VGS = -2 V -------------------------------------------------------------------------------------- -------- 2SK214 ------------------------ ------------------------ ------------------------ -------- 2SK215 -------- 2SK216 Gate to source breakdown voltage Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance * Pulse Test -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 0.2 -- -- -- 1.5 2.0 V V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- 40 90 2.2 -- -- -- mS pF pF -------------------------------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK213, 2SK214, 2SK215, 2SK216 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Typical Output Characteristics 500 3.5 TC = 25C 3.0 Drain Current ID (mA) 400 2.5 300 2.0 200 1.5 100 1.0 VGS = 0.5 V 12 4 8 16 20 Drain to Source Voltage VDS (V) 40 20 0 50 100 Case Temperature TC (C) 150 0 Typical Output Characteristics 50 TC = 25C 500 0.8 Drain Current ID (mA) 0.7 0.6 0.5 0.4 10 0.3 0.2 VGS = 0.1V Typical Transfer Characteristics VDS = 20 V Drain Current ID (mA) 30 300 20 200 100 0 60 20 40 80 100 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate Source Voltage VGS (V) TC =- 40 400 25 C 25 75 5 2SK213, 2SK214, 2SK215, 2SK216 Typical Transfer Characteristics 100 80 Forward Transfer Admittance yfs (mS) TC = -25 C 25 75 Forward Transfer Admittance vs. Drain Current 200 100 50 VDS = 20 V Drain Current ID (mA) 60 20 10 5 TC = 25C VDS = 20 V 40 20 0 1.2 0.4 0.8 1.6 Gate Source Voltage VGS (V) 2.0 2 5 20 10 50 100 200 Drain Current ID (mA) Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Frequency 500 100 10 TC = 25C VDS = 20 V ID = 10 mA 1.0 0.1 0.05 5 k 10 k 1M 10 M 100 k Frequency f (HZ) 50 M |
Price & Availability of 2SK213
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |