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PD - 93794A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ9110 100K Rads (Si) IRHQ93110 300K Rads (Si) RDS(on) 1.1 1.1 ID -2.3A -2.3A
IRHQ9110 100V, QUAD P-CHANNEL
RAD-Hard HEXFET
TM (R)
MOSFET TECHNOLOGY
LCC-28
International Rectifier's RAD-HardTM HEXFET(R) MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings ( Per Die)
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -2.3 -1.5 -9.2 12 0.1 20 75 -2.3 1.2 9.0 -55 to 150 300 (for 5s) 0.89 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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IRHQ9110
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) (Per Die)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-100 -- -- -2.0 1.2 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -- -- 1.1 -4.0 -- -25 -250 -100 100 15 4.3 3.3 21 17 32 32 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -1.5A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -1.5A VDS= -80V, VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -2.3A VDS = -50V VDD = -50V, ID = -2.3A, VGS = -12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz
C iss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
285 90 13
-- -- --
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -2.3 -9.2 -2.5 138 555
Test Conditions
A
V nS nC Tj = 25C, IS = -2.3A, VGS = 0V Tj = 25C, IF = -2.3A, di/dt 100A/s VDD -25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance( Per Die)
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 10.4
C/W
Test Conditions
For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHQ9110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation (Per Die)
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (LCC-28) Diode Forward Voltage
100K Rads(Si)1 300K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -80V, VGS =0V VGS = -12V, ID = -1.5A VGS = -12V, ID = -1.5A VGS = 0V, IS = -2.3A
Min -100 - 2.0 -- -- -- -- -- --
Max -- -4.0 -100 100 - 25 1.056 1.1 -2.5
Min -100 - 2.0 -- -- -- -- -- --
Max -- -5.0 -100 100 -25 1.056 1.1 -2.5
1. Part number IRHQ9110 2. Part number IRHQ93110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion Cu Br I LET MeV/(mg/cm2)) 28.0 36.8 59.8 Energy (MeV) 285 305 343 Range (m) @VGS=0V @VGS=5V 43.0 -100 -100 39.0 -100 -100 32.6 -60 -- VDS (V) @VGS=10V -100 -70 -- @VGS=15V -70 - 50 -- @VGS=20V -60 -40 --
-120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHQ9110
Pre-Irradiation
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
10
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
1
-5.0V
1
-5.0V
0.1
0.1
0.01 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.01 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
TJ = 25 C
10
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -2.3A
-I D , Drain-to-Source Current (A)
2.0
TJ = 150 C
1.5
1.0
1
0.5
0.1 5 7 9
V DS = -50V 20s PULSE WIDTH 11 13 15
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHQ9110
500
400
-VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = -2.3A
16
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
300
Ciss
12
200
8
C oss
100
4
C rss
0 1 10 100
0 0 4
FOR TEST CIRCUIT SEE FIGURE 13
12 8 16
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
TJ = 150 C
-ID , Drain Current (A) I
10
100us 1ms 10ms
1
TJ = 25 C
1
0.1 0.5
V GS = 0 V
1.0 1.5 2.0 2.5 3.0 3.5
0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100
1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHQ9110
Pre-Irradiation
2.5
V DS VGS
RD
D.U.T.
+
-ID , Drain Current (A)
1.5
VGS
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
td(on) tr t d(off) tf
VGS
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJC )
10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.1 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
2.0
RG
V DD
Pre-Irradiation
IRHQ9110
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
200
RG
VGS -20V
D .U .T.
IA S
VD D A D R IV E R
150
ID -1A -1.5A BOTTOM -2.3A TOP
tp
0.0 1
100
15V
50
Fig 12a. Unclamped Inductive Test Circuit
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
. Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QGS VG
QGD
VGS
-3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
-12V
D.U.T.
-
QG
VDS
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IRHQ9110
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -50V, starting TJ = 25C, L= 28.4mH, Peak IL = -2.3A, VGS = -12V ISD -2.3A, di/dt -244A/s, VDD -100V, TJ 150C Pulse width 300 s; Duty Cycle 2%
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions -- LCC-28
Q2
Q1
Q3
Q4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00
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