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| PD - 91729 PRELIMINARY IRG4ZH71KD Surface Mountable Short Circuit Rated UltraFast IGBT C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * High short circuit rating optimized for motor control, tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery antiparallel diodes for use in bridge configurations * Combines low conduction losses with high switching speed * Low profile low inductance SMD-10 Package * Separated control & Power-connections for easy paralleling * Inherently Good coplanarity * Easy solder inspection and cleaning n-channel VCES = 1200V VCE(ON)typ = 2.89V G E(k) E @VGE = 15V, IC = 42A Benefits * Highest power density and efficiency available * HEXFRED Diodes optimized for performance with IGBTs. Minimized recovery characteristics * IGBTs optimized for specific application conditions Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 78 42 156 156 42 156 10 20 350 140 -55 to +150 Units V A s V W C Thermal Resistance Parameter RJC RJC RCS Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical), * Weight Min. --- --- --- --- Typ. --- --- 0.44 6.0(0.21) Max. 0.36 0.69 --- --- Units C/W g (oz) * Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink. www.irf.com 1 IRG4ZH71KD Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 1200 -- -- V Temperature Coeff. of Breakdown Voltage -- 0.26 -- V/C Collector-to-Emitter Saturation Voltage -- 2.89 3.9 -- 3.73 -- V -- 2.55 -- Gate Threshold Voltage 3.0 -- 6.0 Temperature Coeff. of Threshold Voltage -- -11 -- mV/C Forward Transconductance 23 34 -- S Zero Gate Voltage Collector Current -- -- 500 A -- -- 10 mA Diode Forward Voltage Drop -- 2.45 3.7 V -- 2.40 -- Gate-to-Emitter Leakage Current -- -- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 4.0mA IC = 42A VGE = 15V IC = 78A See Fig. 2, 5 IC = 42A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 1.5mA VCE = 50V, IC = 42A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150C IC = 42A See Fig. 13 IC = 42A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 380 48 120 80 45 215 220 3.64 3.17 6.81 -- 91 48 430 400 14.6 2.0 5620 400 94 107 160 10 16 680 1400 250 320 Max. Units Conditions 570 IC = 42A 72 nC VCC = 400V See Fig.8 180 VGE = 15V -- -- TJ = 25C ns 320 IC = 42A, VCC = 800V 330 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode reverse recovery 9.8 See Fig. 9,10,18 -- s VCC = 720V, TJ = 125C VGE = 15V, RG = 5.0 -- TJ = 150C, See Fig. 10,11,18 -- IC = 42A, VCC = 800V ns -- VGE = 15V, RG = 5.0, -- Energy losses include "tail" -- mJ and diode reverse recovery -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 160 ns TJ = 25C See Fig. 240 TJ = 125C 14 IF = 42A 15 A TJ = 25C See Fig. 24 TJ = 125C 15 VR = 200V 1020 nC TJ = 25C See Fig. 2100 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4ZH71KD 40 F or b oth: LOAD CURRENT (A) 30 D uty c y c le : 50% T J = 12 5 C T sink = 90 C G a te d riv e a s s pe c ified P ow er D is s ipation = 44 W S q u a re w a v e : 20 60% of rated voltage I 10 Id e a l d io d es 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 100 TJ = 150 C I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 100 TJ = 150 C TJ = 25 C 10 10 TJ = 25 C 1 1.0 V GE = 15V 80s PULSE WIDTH 2.0 3.0 4.0 5.0 1 5 6 7 V CC = 50V 5s PULSE WIDTH 8 9 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4ZH71KD 80 5.0 60 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) VGE = 15V 80 us PULSE WIDTH 4.0 IC = 84 A 3.0 40 IC = 42 A IC = 21 A 20 2.0 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T he rm a l R es p on se (Zth JC ) D = 0.50 0.1 0.20 P DM 0.10 0.05 0.02 0.01 Notes: 1. Duty factor D = t t 1 t2 S IN G LE P U LS E (TH E R M A L R E S P O N S E ) 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 A 100 0.001 0.01 0.1 1 10 t 1 , R e cta n g u la r P u ls e D u ra tio n (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4ZH71KD 8000 VGE , Gate-to-Emitter Voltage (V) VGE = Cies = Cres = Coes = 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc 20 VCC = 400V I C = 42A 16 C, Capacitance (pF) 6000 Cies 12 4000 8 2000 Coes Cres 4 0 1 10 100 0 0 80 160 240 320 400 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 20 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 800V V GE = 15V TJ = 25 C I C = 42A 100 RG = 5.0 VGE = 15V VCC = 800V IC = 84 A IC = 42 A 15 10 IC = 21 A 10 5 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance () TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4ZH71KD 40 Total Switching Losses (mJ) 30 20 I C , Collector Current (A) RG TJ VCC VGE = 5.0 = 150 C = 800V = 15V 1000 VGE = 20V T J = 125 oC 100 10 10 SAFE OPERATING AREA 0 20 30 40 50 60 70 80 90 1 1 10 100 1000 10000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current 1000 Fig. 12 - Turn-Off SOA Instantaneous forward current - IF (A) 100 TJ = 150C TJ = 125C TJ = 25C 10 1 0.0 2.0 4.0 6.0 Forward Voltage Drop - V FM (V) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4ZH71KD 300 I F = 84A I F = 42A I F = 21A 100 I F = 84A I F = 42A I F = 21A 200 trr- (nC) Irr- ( A) 100 10 VR = 200 V T J = 12 5C T J = 25 C 0 100 V R = 2 00 V T J = 12 5 C T J = 25 C di f /dt - (A/ s) 1000 1 100 1000 d i f /dt - (A / s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 5000 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 00V T J = 12 5C T J = 25 C 4000 I F = 84A I F = 42A I F = 84A di (rec) M/dt- (A /s) IF = 21A 3000 I F = 42A I F = 21A Qrr- (nC) 1000 2000 1000 V R = 2 00V T J = 1 2 5 C T J = 2 5 C 0 100 1000 100 100 1000 di f /dt - (A/ s) di f /dt - (A/ s) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4ZH71KD Same type device as D .U.T. 90% V ge +V ge V ce 80% of Vce 430F D .U .T. Ic 10% V ce Ic 5% Ic td (off) tf 90% Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf E off = Vce Ic dt t1+5 S V ce ic dt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V pk Irr Vcc D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 E rec = Vc Ic dt t4 V d id dt t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4ZH71KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0 F 100 V Vc* D.U.T. RL= 0 - 960V 960V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0 (figure 19) Pulse width 80s; duty factor 0.1% Pulse width 5.0s, single shot www.irf.com 9 IRG4ZH71KD Case Outline -- SMD-10 Dimensions are shown in millimeters 17.30 14.20 4.27 n/c E(k) G 0.90 5.55 29.00 C 0.90 E E Recommended footprint WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 10 www.irf.com |
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