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| 2SC5730 Transistor Medium power transistor (30V, 1.0A) 2SC5730 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2048 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 1.9 0.4 (3) (2) 2.9 1.0MAX 0.85 Abbreviated symbol : UM !Applications Small signal low frequency amplifier High speed switching !Structure NPN Silicon epitaxial planar transistor !Packaging specifications Package Type Code Basic ordering unit (pieces) 2SC5730 Taping TL 3000 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 1 Pw=10ms 2 Each terminal mounted on a recommended land. Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 30 30 6 1 2 500 150 -55~+150 Unit V V V A A mW C C 1 2 0 (1) Base (2) Emitter (3) Collector 0.16 0.1 0.3 0.6 Each lead has same dimensions 0.7 1/3 2SC5730 Transistor !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Symbol BVCBO Min. 30 30 6 - - - 120 - - - - - Typ. - - - - - 150 - 270 10 30 120 35 Max. - - - 1.0 1.0 300 390 - - - - - Unit V V V A A mV - MHz pF ns ns ns IC=100A IC=1mA IE=100A VCB=20V VEB=4V IC=500mA, IB=50mA VCE=2V, IC=100mA VCE=10V, IE= -100mA, f=10MHz1 2 VCB=10V, IE=0mA, f=1MHz Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ton Tstg Tf IC=1A, IB1=0.1A IB2= -0.1A VCC ~ 25V 1 Non repetitive pulse 2 See switching charactaristics measurement cicuits !hFE RANK Q 120-270 R 180-390 !Electrical characteristic curves 10 1000 1000 Ta=25C VCC=25V IC/IB=10/1 1ms Ta=100C VCE=2V COLLECTOR CURRENT : IC (A) 10ms 1 SWITCHING TIME (ns) Tstg DC CURRENT GAIN : hFE 100ms 0.1 100 Ta=-40C Ta=25C DC 100 Tf 10 0.01 Ton Single non repoetitive pulse 0.001 0.1 1 10 100 10 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe operating area 1000 Fig.2 Switching Time 10 Fig.3 DC current gain vs. collector current 10 Ta=25C Ta=25C IC/IB=10/1 VCE=5V DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 100 VCE=3V 1 Ta=100C COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) 1 VCE=2V 10 0.1 Ta=25C Ta=-40C 0.1 IC/IB=20/1 IC/IB=10/1 1 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current vs. collector current 2/3 2SC5730 Transistor 10 IC/IB=10/1 TRANSITION FREQUENCY : FT (MHz) 10 1000 Ta=25C VCE=10V BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (A) 1 Ta=100C 100 Ta=-40C 1 Ta=25C Ta=100C 0.1 Ta=25C 10 Ta=-40C 0.01 0.1 0.001 0.01 0.1 1 10 0 0.5 1 1.5 1 -0.001 -0.01 -0.1 -1 -10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Ground emitter propagation characteristics Fig.9 Transition frequency COLLECTOR OUTPUT CAPACITANCE : COB (pF) 100 Ta=25C f=1MHz 10 1 0.1 1 10 100 BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.10 Collector output capacitance !Switching characteristics measurement circuits RL=25 VIN IB1 IC VCC 25V IB2 1% PW PW 50 S Duty cycle IB1 Base current waveform 90% Collector current waveform Ton IC 10% Tstg Tf IB2 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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