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| SI7911DN New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.051 @ VGS = - 4.5 V - 20 0.067 @ VGS = - 2.5 V 0.094 @ VGS = - 1.8 V FEATURES ID (A) - 5.7 - 5.0 - 4.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKr Package APPLICATIONS D Portable - PA Switch - Battery Switch - Load Switch PowerPAK 1212-8 S1 S2 3.30 mm S1 1 2 3.30 mm G1 S2 G1 G2 3 4 D1 G2 8 7 D1 D2 D1 6 5 D2 D2 P-Channel MOSFET Ordering Information: SI7911DN-T1 P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS - 2.1 2.5 1.3 - 55 to 150 - 4.1 - 20 - 1.1 1.3 0.85 W _C - 3.0 A Symbol VDS VGS 10 secs Steady State - 20 "8 Unit V - 5.7 - 4.2 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72340 S-31612--Rev. A, 11-Aug-03 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 40 75 5.6 Maximum 50 94 7 Unit _C/W C/W 1 SI7911DN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 85_C VDS v - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.7 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 5.0 A VGS = - 1.8 V, ID = - 1.1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 6 V, ID = - 5.7 A IS = - 2.3 A, VGS = 0 V - 20 0.040 0.054 0.075 14 - 0.8 - 1.2 0.051 0.067 0.094 S V W - 0.40 - 1.0 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 2.1 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 4.5 V, ID = - 5.7 A 9.5 1.6 2.5 7.2 20 35 70 40 25 30 55 105 60 50 ns W 15 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 Transfer Characteristics TC = - 55_C 25_C 12 2V 12 125_C 8 1.5 V 4 1V 0 0 1 2 3 4 5 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72340 S-31612--Rev. A, 11-Aug-03 2 SI7911DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) - On-Resistance ( W ) 1500 Vishay Siliconix Capacitance VGS = 1.8 V 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 0.04 C - Capacitance (pF) 0.16 1200 900 Ciss 600 300 Crss Coss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 5.7 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.7 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 4 6 8 10 12 1.2 2 1.0 1 0.8 0 0 2 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.20 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.16 ID = 5.7 A 0.12 ID = 1.1 A 0.08 TJ = 150_C 0.04 TJ = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72340 S-31612--Rev. A, 11-Aug-03 www.vishay.com 3 SI7911DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 30 25 Single Pulse Power 0.3 V GS(th) Variance (V) 0.2 Power (W) ID = 250 mA 0.1 20 15 10 0.0 - 0.1 5 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-To-Ambient 100 rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 10 dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72340 S-31612--Rev. A, 11-Aug-03 SI7911DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 Vishay Siliconix 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Document Number: 72340 S-31612--Rev. A, 11-Aug-03 www.vishay.com 5 |
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