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BZX84C2V4ET1 Series Zener Voltage Regulators 225 mW SOT-23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Specification Features http://onsemi.com * * * * * * * 225 mW Rating on FR-4 or FR-5 Board Zener Breakdown Voltage Range - 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power - 225 W (8 X 20 ms) Pb-Free Package is Available 3 Cathode 1 Anode 3 1 2 SOT-23 CASE 318 STYLE 8 Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM 260C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V-0 xxxM xxx = Specific Device Code M = Date Code MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL 25C Total Power Dissipation on FR-5 Board, (Note 2) @ TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range Symbol Ppk PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 -65 to +150 mW mW/C C/W C 556 mW mW/C C/W BZX84CxxxET3 Max 225 Unit Watts ORDERING INFORMATION Device BZX84CxxxET1 BZX84CxxxET1G Package SOT-23 SOT-23 (Pb-Free) SOT-23 Shipping 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 9. 2. FR-5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. (c) Semiconductor Components Industries, LLC, 2004 1 July, 2004 - Rev. 3 Publication Order Number: BZX84C2V4ET1/D BZX84C2V4ET1 Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol VZ IZT ZZT IR VR IF VF QVZ C Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF Maximum Temperature Coefficient of VZ Max. Capacitance @ VR = 0 and f = 1 MHz VZ VR IR VF IZT V IF I Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VZ1 (V) @ IZT1 = 5 mA (Note 4) Device BZX84C3V3ET1 Device Marking BA4 Min 3.1 Nom 3.3 Max 3.5 VZ2 (V) @ IZT2 = 1 mA (Note 4) Min 2.3 Max 2.9 VZ3 (V) @ IZT3=20 mA (Note 4) Min 3.6 Max 4.2 Max Reverse Leakage Current V IR @R mA (V) 5 1 qVZ C (pF) (mV/k) @ @ IZT1=5 mA VR = 0 f= Min Max 1 MHz -3.5 0 450 ZZT1 (W) @ IZT1 = 5 mA 95 ZZT2 (W) @ IZT2 = 1 mA 600 ZZT3 (W) @ IZT3= 20 mA 40 BZX84C4V7ET1 BZX84C5V1ET1 BZX84C5V6ET1 BZX84C6V2ET1, G* BZX84C6V8ET1 BZX84C7V5ET1 BZX84C10ET1 BA9 BB1 BB2 BB3 BB4 BB5 BB8 4.4 4.8 5.2 5.8 6.4 7 9.4 4.7 5.1 5.6 6.2 6.8 7.5 10 5 5.4 6 6.6 7.2 7.9 10.6 80 60 40 10 15 15 20 3.7 4.2 4.8 5.6 6.3 6.9 9.3 4.7 5.3 6 6.6 7.2 7.9 10.6 500 480 400 150 80 80 150 4.5 5 5.2 5.8 6.4 7 9.4 5.4 5.9 6.3 6.8 7.4 8 10.7 15 15 10 6 6 6 10 3 2 1 3 2 1 0.2 2 2 2 4 4 5 7 -3.5 -2.7 -2.0 0.4 1.2 2.5 4.5 0.2 1.2 2.5 3.7 4.5 5.3 8.0 260 225 200 185 155 140 130 BZX84C12ET1 BZX84C15ET1 BZX84C16ET1 BC1 BC3 BC4 11.4 14.3 15.3 12 15 16 12.7 15.8 17.1 25 30 40 11.2 13.7 15.2 12.7 15.5 17 150 200 200 11.4 13.9 15.4 12.9 15.7 17.2 10 20 20 0.1 0.05 0.05 8 10.5 11.2 6.0 9.2 10.4 10.0 13.0 14.0 130 110 105 BZX84C18ET1 BZX84C24ET1 BC5 BC8 16.8 22.8 18 24 19.1 25.6 45 70 16.7 22.7 19 25.5 225 250 16.9 22.9 19.2 25.7 20 25 0.05 0.05 12.6 16.8 12.4 18.4 16.0 22.0 100 80 Device BZX84C27ET1 BZX84C43ET1 Device Marking BC9 BK6 VZ1 Below @ IZT1 = 2 mA Min 25.1 40 Nom 27 43 Max 28.9 46 ZZT1 Below @ IZT1 = 2 mA 80 150 VZ2 Below @ IZT2 = 0.1 mA Min 25 39.7 Max 28.9 46 ZZT2 Below @ IZT4 = 0.5 mA 300 375 VZ3 Below @ IZT3 = 10 m A Min 25.2 40.1 Max 29.3 46.5 ZZT3 Below @ IZT3 = 10 mA 45 80 Max Reverse Leakage Current V IR @R mA (V) 0.05 0.05 18.9 30.1 qVZ (mV/k) Below @ IZT1 = 2 mA Min 21.4 37.6 Max 25.3 46.6 C (pF) @ VR =0 f= 1 MHz 70 40 * The "G" suffix indicates Pb-Free package available. 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C http://onsemi.com 2 BZX84C2V4ET1 Series TYPICAL CHARACTERISTICS 8 7 6 5 4 3 2 1 0 VZ @ IZT TYPICAL TC VALUES 100 VZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL TC VALUES VZ, TEMPERATURE COEFFICIENT (mV/C) VZ @ IZT 10 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 Figure 1. Temperature Coefficients (Temperature Range - 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range - 55C to +150C) 1000 Z ZT, DYNAMIC IMPEDANCE ( ) IZ = 1 mA TJ = 255C IZ(AC) = 0.1 IZ(DC) f = 1 kHz 1000 IF, FORWARD CURRENT (mA) 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 100 10 150C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 0.5 75C 25C 0C 1.1 1.2 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 3. Effect of Zener Voltage on Zener Impedance Figure 4. Typical Forward Voltage http://onsemi.com 3 BZX84C2V4ET1 Series TYPICAL CHARACTERISTICS 1000 0 V BIAS C, CAPACITANCE (pF) 1 V BIAS TA = 25C 1000 I R , LEAKAGE CURRENT (A) 100 10 1 0.1 +150C 100 BIAS AT 50% OF VZ NOM 10 0.01 + 25C -55C 0 10 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 90 0.001 0.0001 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.00001 Figure 5. Typical Capacitance Figure 6. Typical Leakage Current 100 I Z, ZENER CURRENT (mA) TA = 25C I Z , ZENER CURRENT (mA) 10 100 TA = 25C 10 1 1 0.1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 12 0.01 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) 100 % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 0 20 40 tP tr Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms 60 80 t, TIME (ms) Figure 9. 8 x 20 ms Pulse Waveform http://onsemi.com 4 BZX84C2V4ET1 Series PACKAGE DIMENSIONS SOT-23 TO-236AB CASE 318-09 ISSUE AJ A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 3 1 2 B S V G C D H K J DIM A B C D G H J K L S V STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 BZX84C2V4ET1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 BZX84C2V4ET1/D |
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