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| DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BAV100 to BAV103 General purpose diodes Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification General purpose diodes FEATURES * Small hermetically sealed glass SMD package * Switching speed: max. 50 ns * General application * Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively * Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively * Repetitive peak forward current: max. 625 mA. APPLICATIONS * Switching in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television. Cathode indicated by green band. handbook, 4 columns BAV100 to BAV103 DESCRIPTION The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. 1996 Sep 17 2 Philips Semiconductors Product specification General purpose diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BAV100 BAV101 BAV102 BAV103 VR continuous reverse voltage BAV100 BAV101 BAV102 BAV103 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 see Fig.2; note 1 PARAMETER repetitive peak reverse voltage CONDITIONS BAV100 to BAV103 MIN. - - - - - - - - - - MAX. 60 120 200 250 50 100 150 200 250 625 V V V V V V V V UNIT mA mA - - - - -65 - 9 3 1 400 +175 175 A A A mW C C 1996 Sep 17 3 Philips Semiconductors Product specification General purpose diodes ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 100 mA IF = 200 mA IR reverse current BAV100 BAV101 BAV102 BAV103 Cd trr diode capacitance reverse recovery time see Fig.5 VR = 50 V VR = 50 V; Tj = 150 C VR = 100 V VR = 100 V; Tj = 150 C VR = 150 V VR = 150 V; Tj = 150 C VR = 200 V VR = 200 V; Tj = 150 C f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA; see Fig.8 CONDITIONS BAV100 to BAV103 MIN. - - - - - - - - - - - - MAX. 1.0 1.25 100 100 100 100 100 100 100 100 5 50 V V UNIT nA A nA A nA A nA A pF ns THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 300 375 UNIT K/W K/W 1996 Sep 17 4 Philips Semiconductors Product specification General purpose diodes GRAPHICAL DATA BAV100 to BAV103 handbook, halfpage 300 MBH278 handbook, halfpage 600 MBG459 IF (mA) 200 IF (mA) 400 (1) (2) (3) 100 200 0 0 100 Tamb (oC) 200 0 0 (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG703 10 1 10-1 1 10 102 103 tp (s) 104 Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 5 Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 103 handbook, halfpage IR (A) MGD009 MGD005 handbook, halfpage 1.6 102 Cd (pF) 1.4 10 1.2 1 10-1 1.0 10-2 0 100 Tj (oC) 200 0.8 0 10 VR (V) 20 VR = VRmax. Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 300 MBG700 VR (V) (1) 200 (2) (3) 100 (4) 0 0 (1) BAV103. (2) BAV102. (3) BAV101. (4) BAV100. 100 Tamb (oC) 200 Fig.7 Maximum permissible continuous reverse voltage as a function of ambient temperature. 1996 Sep 17 6 Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.8 Reverse recovery voltage test circuit and waveforms. 1996 Sep 17 7 Philips Semiconductors Product specification General purpose diodes PACKAGE OUTLINE BAV100 to BAV103 handbook, full pagewidth 1.60 O 1.45 0.3 3.7 3.3 0.3 MBA390 - 2 Dimensions in mm. Fig.9 SOD80C. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 17 8 |
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