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| TIP120, TIP121, TIP122 NPN Version 2004-06-21 Darlington Transistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren NPN Collector current - Kollektorstrom Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 1 = B1 2 = C2 3 = E2 5A TO-220AB 2.2 g Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) TIP120 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage B open E open C open VCE0 VCB0 VEB0 Ptot Ptot IC ICM IB Tj TS 60 V 60 V Grenzwerte (TA = 25C) TIP121 80 V 80 V 50 V 2 W 1) 65 W 5A 8A 120 mA - 65...+ 150C - 65...+ 150C TIP122 100 V 100 V Power dissipation - Verlustleistung without cooling - ohne Kuhlung with cooling - mit Kuhlung TC = 25C Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Base current - Basisstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25C) Min. Collector-Emitter cutoff current - Kollektorreststrom IB = 0, VCE = 30 V IB = 0, VCE = 40 V IB = 0, VCE = 50 V IE = 0, VCB = 60 V IE = 0, VCB = 80 V IE = 0, VCB = 100 V 1 Kennwerte (Tj = 25C) Typ. - - - - - - Max. 500 nA 500 nA 500 nA 200 nA 200 nA 200 nA TIP120 TIP121 TIP123 TIP120 TIP121 TIP122 ICE0 ICE0 ICE0 ICB0 ICB0 ICB0 - - - - - - Collector-Base cutoff current - Kollektorreststrom ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig, wenn die Anschludrahte in 5 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 1 Darlington Transistors TIP120, TIP121, TIP122 Characteristics (Tj = 25C) Min. Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V IC = 3 A, IB = 12 mA IC = 5 A, IB = 20 mA IC = 3 A, VCE = 3 V VCE = 3 V, IC = 0.5 A VCE = 3 V, IC = 3 A VCE = 4 V, IC = 3 A, f = 1 MHz VCB = 10 V, IE = ie = 0, f = 100 kHz Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft junction to case - Sperrschicht zu Gehause Admissible torque for mounting Zulassiges Anzugsdrehmoment Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Equivalent Circuit - Ersatzschaltbild IEB0 VCEsat VCEsat VBEon hFE hFE hfe CCB0 - - - - 1000 1000 4 - Kennwerte (Tj = 25C) Typ. - - - - - - - - RthA RthC M4 Max. 2 mA 2V 4V 2.5 V - - - 200 pF 62.5 K/W 2) 2 K/W 9 10% lb.in. 1 10% Nm Collector saturation voltage - Kollektor-Sattigungsspg. 1) Base-Emitter on-voltage - Basis-Emitter-Spannung 1) DC current gain - Kollektor-Basis-Stromverhaltnis 1) Small signal current gain - Kleinsignal-Stromverstarkung Collector-Base Capacitance - Kollektor-Basis-Kapazitat TIP125, TIP126, TIP127 C2 T2 B1 T1 E2 1 2 ) Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig, wenn die Anschludrahte in 5 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 2 |
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