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| STGP7NB60M - STGD7NB60M N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESHTM IGBT TYPE STGP7NB60M STGD7NB60M s s s s s s s VCES 600 V 600 V VCE(sat) (Max) @25C < 1.9 V < 1.9 V IC @100C 7A 7A 3 3 1 2 HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE 1 TO-220 DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "M" identifies a family optimized to achieve very low switching switching times for high frequency applications (<20KHZ) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS MOTOR CONTROLS s SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES s ORDERING INFORMATION SALES TYPE STGP7NB60M STGD7NB60MT4 MARKING GP7NB60M GD7NB60M PACKAGE TO-220 DPAK PACKAGING TUBE TAPE & REEL June 2003 1/11 STGP7NB60M - STGD7NB60M ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter TO-220 Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature 80 0.64 - 55 to 150 150 600 20 14 7 56 70 0.56 Value DPAK V V A A A W W/C C C Unit ( ) Pulse width limited by safe operating area THERMAL DATA TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 62.5 DPAK 1.78 100 C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 600 50 100 100 Typ. Max. Unit V A A nA VBR(CES) Collector-Emitter Breakdown Voltage ICES IGES Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250 A VGE = 15V, IC = 7 A VGE = 15V, IC= 7 A, Tj =125C Min. 3 1.5 1.2 Typ. Max. 5 1.9 Unit V V V 2/11 STGP7NB60M - STGD7NB60M ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current VCE = 480V, IC = 7 A, VGE = 15V Vclamp = 480 V, VGE = 15V Tj = 125C , RG = 10 Test Conditions VCE = 25 V, Ic = 7 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 5 550 85 13 37 4.2 13 28 50 Max. Unit S pF pF pF nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 7 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 7 A RG=10 VGE = 15 V,Tj =125C Min. Typ. 13 6 1000 50 Max. Unit ns ns A/s J SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 7 A, RG = 10 , VGE = 15 V Tj = 125 C Test Conditions Vcc = 480 V, IC = 7 A, RG = 10 , VGE = 15 V Min. Typ. 340 95 155 240 455 500 610 215 280 390 870 920 Max. Unit ns ns ns ns J J ns ns ns ns J J Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/11 STGP7NB60M - STGD7NB60M Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/11 STGP7NB60M - STGD7NB60M Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/11 STGP7NB60M - STGD7NB60M Thermal Impedance for TO-220 Thermal Impedance for DPAK Turn-Off SOA 6/11 STGP7NB60M - STGD7NB60M Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/11 STGP7NB60M - STGD7NB60M TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q 8/11 STGP7NB60M - STGD7NB60M TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 9/11 STGP7NB60M - STGD7NB60M DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W 10/11 BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 1.85 7.6 2.75 4.1 8.1 2.1 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 * on sales type STGP7NB60M - STGD7NB60M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 11/11 |
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