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KSE5020
KSE5020
Feature
* High Voltage, High Quality High Speed Switching : tF=0.1s * WIDE SOA
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 800 500 7 3 6 1 30 150 - 55 ~ 150 Units V V V A A A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO VCEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tS tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, RBE = IE = 1mA, IC = 0 IC = 1.5A, IB1=-IB2= 0.6A L = 2mH, Clamped VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, f = 1MHz VCE = 10V, IC = 0.3A VCC = 200V 5IB1 = -2.5IB2=IC=2A RL = 100 50 18 0.5 3 0.3 15 8 Min. 800 500 7 500 10 10 50 1 1.5 V V pF MHz s s s Typ. Max. Units V V V V A A
hFE Classification
Classification hFE1
(c)2001 Fairchild Semiconductor Corporation
R 15 ~ 30
O 20 ~ 40
Y 30 ~ 50
Rev. A1, June 2001
KSE5020
Typical Characteristics
5.0 4.5
1000
IC[A], COLLECTOR CURRENT
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4
hFE, DC CURRENT GAIN
8 9 10
IB=500mA IB=400mA IB=300mA IB=200mA IB=100mA
IB=50mA IB=20mA IB=0
5 6 7
100
10
1 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
4.0
VBE(sat),VCE(sat)[V], SATURATION VOLTAGE
IC =5IB
3.5
VCE=5V
IC[A], COLLECTOR CURRENT
1 10
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0
1
VBE(sat)
0.1
VCE(sat)
0.01 0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Baser-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
VCC=200V IC=5IB1=-2.5IB2
tSTG[us], STORAGE TIME tON[us], TURN ON TIME tF[us], FALL TIME
1
tSTG tON tF
0.1
0.01 0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Turn On Time
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSE5020
Package Demensions
TO-126
0.10
3.90
8.00 0.30
3.25 0.20
14.20MAX
o3.20 0.10
11.00
0.20
(1.00) 0.75 0.10 1.60 0.10 0.75 0.10
0.30
(0.50) 1.75 0.20
#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]
13.06
16.10
0.20
0.50 -0.05
+0.10
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3

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