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PD - 94286A
HEXFET(R) POWER MOSFET THRU-HOLE (TO-254AA)
IRF5M3415 150V, N-CHANNEL
Product Summary
Part Number
IRF5M3415 BVDSS
150V
RDS(on) 0.049
ID 35A
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-254AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 35 22 140 125 1.0 20 290 22 12.5 2.0 -55 to 150 300 (0.063in./1.6mm from case for 10s) 9.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
For footnotes refer to the last page
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10/01/01
IRF5M3415
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
150 -- -- 2.0 19 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.18 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.049 4.0 -- 25 250 100 -100 200 17 98 25 80 75 70 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 22A VDS = VGS, ID = 250A VDS =15V, IDS = 22A VDS = 150V ,VGS=0V VDS = 120V, VGS = 0V, TJ =125C VGS =-20V VGS = -20V VGS =10V, ID = 22A VDS = 120V VDD = 75V, ID = 22A, VGS = 10V, RG = 2.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
l Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
2730 570 285
-- -- --
pF
Measured from drain lead (6mm / 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 35 140 1.3 390 3.3
Test Conditions
A
V ns C Tj = 25C, IS = 22A, VGS = 0V Tj = 25C, IF = 22A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 1.0
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRF5M3415
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
4.5V
10
10
4.5V
1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 35A
I D , Drain-to-Source Current (A)
2.0
TJ = 25 C TJ = 150 C
1.5
100
1.0
0.5
10 4.0
15
V DS = 50V 20s PULSE WIDTH 7.0 8.0 5.0 6.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF5M3415
6000
5000
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 22A
16
C, Capacitance (pF)
VDS = 120V VDS = 75V VDS = 30V
4000
Ciss
12
3000
2000
C oss C rss
8
1000
4
0 1 10 100
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160 200 240
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100
TJ = 150 C
10
ID, Drain-to-Source Current (A)
100
TJ = 25 C
1
100s
10
1ms
Tc = 25C Tj = 150C Single Pulse 1 1 10 100 1000 VDS , Drain-toSource Voltage (V)
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8 2.2 2.6
10ms
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF5M3415
35
V DS VGS RG
RD
30
D.U.T.
+
I D , Drain Current (A)
25
-V DD
20
VGS
Pulse Width 1 s Duty Factor 0.1 %
15
10
Fig 10a. Switching Time Test Circuit
VDS 90%
5
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1
PDM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF5M3415
600
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
500
TOP BOTTOM ID 10A 14A 22A
VD S
L
D R IV E R
400
RG
D .U .T.
IA S
300
+ V - DD
A
VGS 20V
tp
200
0 .0 1
100
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
10V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF5M3415
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 1.2 mH Peak IAS = 22A, VGS = 10V, RG= 25
ISD 22A, di/dt 70 A/s, Pulse width 300 s; Duty Cycle 2%
VDD 150V, TJ 150C
Case Outline and Dimensions -- TO-254AA
0.12 [.005]
.1 2 ( .0 0 5 ) 3 .7 8 ( .14 9 ) 3 .5 3 ( .13 9 ) -A 1 3.8 4 ( .5 4 5 ) 1 3.5 9 ( .5 3 5 ) 6 .6 0 ( .2 60 ) 6 .3 2 ( .2 49 ) -B 1 .2 7 ( .0 50 ) 1 .0 2 ( .0 40 )
3.78 [.149] 3.53 [.139] A
13.84 [.545] 13.59 [.535]
6.60 [.260] 6.32 [.249]
1.27 [.050] 1.02 [.040]
17 .4 0 ( .68 5 ) 16 .8 9 ( .66 5 ) 3 1 .4 0 ( 1 .2 3 5 ) 3 0 .3 9 ( 1 .1 9 9 )
20 .3 2 ( .8 00 ) 20 .0 7 ( .7 90 )
1 3.84 ( .5 4 5 ) 1 3.59 ( .5 3 5 )
LE G E N D 1 - COLL 2 - E M IT 3 - G A TE
22.73 [.895] 21.21 [.835]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B R 1.52 [.060]
1
2
3 -C -
4.82 [.190] 3.81 [.150]
3X 3.81 ( .1 5 0 ) 2X 1.1 4 ( .0 45 ) 0.8 9 ( .0 35 ) .50 ( .0 2 0 ) .25 ( .0 1 0 ) M C AM B MC 3.81 ( .1 5 0 )
4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A
3.81 [.150] 2X
IRHM57163SED IRHM57163SEU
LEGEND 1- DRAIN 2- SOURCE 3- GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/01
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