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 HAT1025R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-437 F (Z) 7th. Edition December. 1996 Features
* * * * Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
SOP-8
8 5 76
3 12 78 DD 56 DD
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT1025R
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID(pulse)Note1 Ratings -20 10 -4.5 -36 -4.5 2 3 150 -55 to +150 Unit V V A A A W W C C
Body-drain diode reverse drain current IDR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Note2 Pch Note3 Tch Tstg
1. PW 10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current IGSS IDSS -- -- -0.5 -- -- 4.5 -- -- -- -- -- -- -- -- -- -- -- 0.065 0.09 7 860 450 150 20 120 120 100 -0.9 10 -10 -1.5 0.095 0.15 -- -- -- -- -- -- -- -- -1.4 A A V S pF pF pF ns ns ns ns V IF = -4.5A, VGS = 0 Note4 VGS = 8V, VDS = 0 VDS = -20 V, VGS = 0 VDS = -10V, I D = -1mA ID = -3A, VGS = -4V Note4 ID = -3A, VGS = -2.5V Note4 ID = -3A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -4V, ID = -3A VDD A -10V V(BR)GSS 10 -- -- V IG = 100 A, VDS = 0 Symbol Min Typ -- Max -- Unit V Test Conditions ID = -10mA, VGS = 0 V(BR)DSS -20
Gate to source cutoff voltage VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) RDS(on) |yfs| Ciss Coss
Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage td(on) tr td(off) tf VDF
HAT1025R
Body-drain diode reverse recovery time Note: 4. Pulse test trr -- 60 -- ns IF = -4.5A, VGS = 0 diF/ dt =20A/s
HAT1025R
Main Characteristics
Power vs. Temperature Derating 4.0
Pch (W) I D (A)
Maximum Safe Operation Area -100 10 s 100 s
1m
Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0
-30 -10 -3 -1
DC Op er at
PW
ion
=
s
Channel Dissipation
Drain Current
10
m
s
2 Dr
2.0
1 Dr
1.0
ive
Op
er
at
ion
0
50
100
150 Ta (C)
200
Ambient Temperature
Operation in < Note 10 5 -0.3 this area is s) limited by R DS(on) -0.1 Ta = 25 C -0.03 1 shot Pulse 1 Drive Operation -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm)
(P
Typical Output Characteristics -20 -10 V -5 V -4 V -3.5 V Pulse Test
(A)
ive io at er Op n
W
Typical Transfer Characteristics -20 Tc = -25 C -16 25 C 75 C -12
I D (A)
-16
-3 V
ID
-12
-2.5 V
Drain Current
-8 -2 V VGS = -1.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V)
Drain Current
-8
-4
-4
V DS = -10 V Pulse Test -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V)
0
HAT1025R
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source On State Resistance R DS(on) ( )
-0.5
Drain to Source Saturation Voltage V DS(on) (V)
Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 VGS = -2.5 V -4 V
-0.4
-0.3
-0.2 I D = -2 A -1 A -0.5 A -8
0.05
-0.1
0.02 0.01 -0.2
0
-6 -2 -4 Gate to Source Voltage
-10 V GS (V)
-0.5 -1 -2 Drain Current
-5 -10 -20 I D (A)
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 0.20
Forward Transfer Admittance vs. Drain Current 20 10 5 25 C 2 1 0.5 0.2 -0.2 V DS = -10 V Pulse Test -0.5 -1 -2 -5 -10 -20 Drain Current I D (A) 75 C Tc = -25 C
0.16
-1 A, -0.5 A I D = -2 A V GS = -2.5 V
0.12
0.08 -2 A, -1 A, -0.5 A 0.04 0 -40 -4 V
0 40 80 120 160 Case Temperature Tc (C)
HAT1025R
Body-Drain Diode Reverse Recovery Time 500 10000 3000 1000 300 Crss 100 30 10 0 Ciss Coss Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
100 50
20 10 5 -0.2 di / dt = 20 A / s VGS = 0, Ta = 25 C -0.5 -1 -2 -5 -10 -20 Reverse Drain Current I DR (A)
Capacitance C (pF)
200
VGS = 0 f = 1 MHz -4 -8 -12 -16 -20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DS (V)
Switching Time t (ns)
-10
VDD = -5 V -10 V -20 V V GS V DS V DD = -20 V -10 V -5 V
V GS (V)
0
0
500
Switching Characteristics
-2
200 100 50
t d(off) tf tr t d(on)
Drain to Source Voltage
-20
-4
-30
-6
Gate to Source Voltage
20 10
-40 -50 0
-8
I D = -4.5 A -10 4 8 12 16 20 Gate Charge Qg (nc)
5 -0.2
V GS = -4 V, V DD = -10 V PW = 3 s, duty < 1 % -0.5 -1 -2 Drain Current -5 -10 -20 I D (A)
HAT1025R
Reverse Drain Current vs. Souece to Drain Voltage -20 Reverse Drain Current I DR (A)
-16
V GS = -5 V 0, 5 V
-12
-8
-4 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.1
0.2
0.1 0.05
0.02 0.01
0.01
ch - f(t) = s (t) * ch - f ch - f = 125 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm)
ls pu e
PDM PW T
0.001
1s ho t
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
1000
Pulse Width PW (S)
HAT1025R
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10 Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.1
0.2
0.1 0.05
0.02 0.01
0.01
ch - f(t) = s (t) * ch - f ch - f = 166 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm)
ls pu e
PDM PW T
0.001
1s ho t
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
1000
Pulse Width PW (S)
HAT1025R
Package Dimensions
Unit: mm
5.0 Max 8 5
1
4
4.0 Max
1.75 Max
6.2 Max 0.25 Max
0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max
0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA -- MS-012AA


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