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| SLD324ZT High-Power Density 2W Laser Diode Description The SLD324ZT is a gain-guided, high-power density laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by controlling the laser chip temperature. Features * High power Recommended optical power output: Po = 2.0W * Low operating current: Iop = 2.5A (Po = 2.0W) * Newly developed flat package with built-in photodiode, TE cooler and thermistor Applications * Solid state laser excitation * Medical use * Material processes * Measurement Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tth = 25C) * Optical power output Po * Reverse voltage VR LD PD * Operating temperature (Tth) Topr * Storage temperature Tstg * Operating current of TE cooler IT Pin Configuration (Top View) No. 1 2 3 4 5 6 Function TE Cooler (negative) TE Cooler (negative) Thermistor Thermistor LD (anode) LD (anode) No. 7 8 9 10 11 12 Function LD (cathode) LD (cathode) PD (cathode) PD (anode) TE Cooler (positive) TE Cooler (positive) Equivalent Circuit TE Cooler TH LD PD 2.2 2 15 -10 to +30 -40 to +85 4.0 W V V C C A 12 3 4 5 67 8 9 10 11 12 1 12 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E93322B81-PS SLD324ZT Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength1 Monitor current Radiation angle (F. W. H. M.) Positional accuracy Differential efficiency Thermistor resistance Perpendicular Parallel Position Angle Symbol Ith Iop Vop p Imon // X, Y D Rth PO = 2.0W PO = 2.0W PO = 2.0W PO = 2.0W VR = 10V PO = 2.0W Conditions (Tth: Thermistor temperature, Tth = 25C) Min. Typ. 0.6 2.5 2.2 790 0.15 20 4 0.8 30 9 Max. 1.0 3.5 3.0 840 3.0 40 17 100 3 PO = 2.0W Tth = 25C 0.65 1.0 10 Unit A A V nm mA degree degree m degree W/A k PO = 2.0W F. W. H. M. : Full Width at Half Maximum 1 Wavelength Selection Classification Type SLD324ZT-1 SLD324ZT-2 SLD324ZT-3 Type SLD324ZT-21 SLD324ZT-24 SLD324ZT-25 Wavelength (nm) 795 5 810 10 830 10 Wavelength (nm) 798 3 807 3 810 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate AP C ATC Optical boad Optical power output control device temperature control device -2- SLD324ZT Example of Representative Characteristics Optical power output vs. Forward current characteristics 3 Tth = 15C Tth = 25C Tth = 0C Optical power output vs. Monitor current characteristics 2.5 Tth = 15C Po - Optical power output [W] 2 Tth = 0C Tth = -10C Tth = 25C Tth = 30C 2.5 Po - Optical power output [W] 2 Tth = -10C 1.5 Tth = 30C 1.5 1 1 0.5 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0 0.5 Imon - Monitor current [mA] 1 IF - Forward current [A] Threshold current vs. Temperature characteristics 1 830 Dependence of wavelength PO = 2.0W 820 Ith - Threshold current [A] p - Wavelength [nm] 0.1 -10 0 10 20 30 810 800 790 780 -10 0 10 20 30 Tth - Thermistor temperature [C] Tth - Thermistor temperature [C] Power dependence of far field pattern (Perpendicular to junction) Tth = 25C Radiation intensity (optional scale) Radiation intensity (optional scale) Power dependence of far field pattern (Parallel to junction) Tth = 25C PO = 2.0W PO = 1.5W PO = 1.0W PO = 0.5W PO = 2.0W PO = 1.5W PO = 1.0W PO = 0.5W -60 -30 0 30 60 90 -90 -60 -30 0 30 60 90 -90 Angle [degree] Angle [degree] -3- SLD324ZT Differential efficiency vs. Temperature characteristics 1.5 50 D - Differential efficiency [mW/mA] Rth - Thermister resistance [k] Termistor chacteristics 1 10 0.5 5 0 -10 0 10 20 30 1 -10 0 10 20 30 40 50 60 70 Tth - Termistor temperature [C] Tth - Termistor temperature [C] TE cooler characteristics TE cooler characteristics 1 40 Tc = 32C 15 40 Tth = 25C TE cooler characteristics 2 15 IT = Q - Absorbed heat [W] Q - Absorbed heat [W] 30 VT - Pin voltage [V] T vs V IT = 4A 20 3A 2A 5 10 30 4A VT - Pin voltage [V] 3A T vs V 10 20 2A T 5 T 10 10 3A vs Q vs Q 4A 3A 4A 0 2A 80 100 0 0 0 20 40 60 80 100 2A 0 0 20 40 60 T - Temperature difference [C] T: Tc - Tth Tth: Thermistor temperature Tc: Case temperature T - Temperature difference [C] -4- SLD324ZT Power dependence of spectrum Tth = 25C Po = 0.8W 1.00 Relative radiant intensity Relative radiant intensity 1.00 Tth = 25C Po = 1.2W 0.00 790 Wavelength [nm] 800 0.00 790 Wavelength [nm] 800 Tth = 25C Po = 1.6W 1.00 Relative radiant intensity Relative radiant intensity 1.00 Tth = 25C Po = 2.0W 0.00 790 Wavelength [nm] 800 0.00 790 Wavelength [nm] 800 -5- SLD324ZT Temperature dependence of spectrum (Po = 2W) Tth = -10C 1.00 Relative radiant intensity Relative radiant intensity 1.00 Tth = 0C 0.00 780 Wavelength [nm] 810 0.00 780 Wavelength [nm] 810 Tth = 25C 1.00 Relative radiant intensity Relative radiant intensity 1.00 Tth = 30C 0.00 780 Wavelength [nm] 810 0.00 780 Wavelength [nm] 810 -6- SLD324ZT Package Outline Unit: mm M-272 + 0.06 4 - 3.0 0 41.0 0.05 20.0 0.05 18.0 5.0 Window Glass 8.0 0.5 12 - 0.64 2.54 46.0 0.5 0.8 MAX 23.0 36.0 0.5 LD CHIP 10.0 0.1 36.0 0.5 9.0 0.2 118 g Reference Plane 20.5 0.1 SONY CODE EIAJ CODE JEDEC CODE M-272 Distance between pilot hole and emitting area. PACKAGE WEIGHT -7- 3.0 13.05 0.1 12.35 |
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