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| Gabellichtschranke Slotted Interrupter Vorlaufige Daten / Preliminary Data SFH 9300 10.80 10.54 3.78 3.52 optical axis 6.6 6.1 12.05 11.55 10.55 10.05 0.5 0.3 3.31 2.81 7.82 7.42 3.25 2.75 0.6 0.4 2.54 Pin Configuration (top view) LED Phototransistor (clear encapsulation) (black encapsulation) Anode Emitter Cathode Collector GPX06986 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Kompaktes Gehause q GaAs-IR-Sendediode (940 nm) q Si-Fototransistor mit Tageslichtsperrfilter q Einfache Unterscheidbarkeit von Sender (transparentes Gehause) und Empfanger (schwarzes Gehause) Features q Compact type q GaAs infrared emitter (940 nm) q Silicon phototransistor detector with daylight-cutoff filter q Easy identification of emitter (clear component package) and transistor (black component package) Applications q Speed control q Motor control q Monitoring of paper feed in printers, copiers, q q q q Anwendungen q Geschwindigkeitsuberwachung q Motorsteuerung q Uberwachung des Papiervorschubs in q q q q Druckern, Kopier- und Faxgeraten Speicherlaufwerke Steuerung des Druckkopfes in Druckern Munzdetektion Optoelektronische Schalter facsimiles Disk drives Control of print head in printers Coin detection Optoelectronic switches Semiconductor Group 1 1998-10-14 fpx06986 2.35 1.85 6.6 6.0 SFH 9300 Typ Type SFH 9300 Bestellnummer Ordering Code Q62702-P5019 Gehause Package Schwarzes Polykarbonat Plastikgehause, Anschlusse im 2,54-mm Raster Polycarbonate plastic material housing, solder tabs 2.54-mm (1/10") spacing Grenzwerte TA = 25 C Maximum Ratings Bezeichnung Description Sender (GaAs-Diode) Emitter (GaAs Diode) Sperrspannung Reverse voltage Durchlastrom Forward current Verlustleistung Power dissipation Warmewiderstand Thermal resistance Empfanger (Si-Fototransistor) Detector (Silicon Phototransistor) Kollektor-Emitter-Spannung Collector-emitter voltage Kollektor-Emitter-Spannung, (t 2 min) Collector-emitter voltage, (t 2 min) Emitter-Kollektor-Spannung Emitter-collector voltage Kollektorstrom Collector current Verlustleistung Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value Einheit Unit VR IF (DC) Ptot RthJA 5 60 100 280 V mA mW K/W VCE VCE VEC IC Ptot RthJA 30 70 7 50 150 280 V mA mW K/W Semiconductor Group 2 1998-10-14 SFH 9300 Grenzwerte TA = 25 C (cont'd) Maximum Ratings Bezeichnung Description Gabellichtschranke Slotted Interrupter Lagertemperatur Storage temperature range Betriebstemperatur Operating temperature range Elektrostatische Entladung Electrostatic discharge Symbol Symbol Wert Value Einheit Unit Tstg Top ESD - 40 ... + 85 - 40 ... + 85 2 C kV Kennwerte TA = 25 C Characteristics Bezeichnung Description Sender (GaAs-Diode) Emitter (GaAs Diode) Wellenlange der Strahlung Wavelength of peak emission Durchlaspannung Forward voltage IF = 20 mA, tp = 20 ms Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Symbol Symbol Wert Value Einheit Unit peak VF 940 1.2 ( 1.4) nm V IR 0.01 ( 1) A C0 16 pF Semiconductor Group 3 1998-10-14 SFH 9300 Kennwerte TA = 25 C (cont'd) Characteristics Bezeichnung Description Empfanger (Si-Fototransistor) Detector (Silicon Phototransistor) Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spectr. Bereich der Fotoempfindlichkeit Spectral range of sensitivity S = 10 % of Smax Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 20 V Gabellichtschranke Slotted interrupter Kollektor-Emitterstrom Collector-emitter current IF = 20 mA; VCE = 5 V Kollektor-Emitter-Sattigungsspannung Collector-emitter-saturation voltage IF = 20 mA; IC = 0.3 mA Anstiegs- und Abfallzeit Rise and fall time VCC = 5 V, IC = 1 mA, RL = 1 k Symbol Symbol Wert Value Einheit Unit S max 920 840 ... 1080 nm nm CCE 6.5 pF ICEO 2 ( 50) nA ICE min. ICE typ. VCE sat >1 mA 0.4 V tr tf 13 17 s s Lothinweise Soldering conditions Bauform Type Tauch-, Schwalllotung Dip, wave soldering Peak temp. (solderbath) SFH 9300 260 C Max. time in peak zone 10 s Reflowlotung Reflow soldering Peak temp. (package temp.) n. a. Max. time in peak zone _ Kolbenlotung Iron soldering (Iron temp.) 300 C < 5 s Semiconductor Group 4 1998-10-14 SFH 9300 Forward current IF = f (VF) Single pulse, tp = 20 s F 10 4 mA 10 3 OHFD00367 Max. permissible forward current IF = f (TA) 90 OHF00372 Dark current ICEO= f (TA) VCE = 20 V, E = 0 CEO 10 3 nA OHF00380 F mA 70 10 2 R thJA = 280 K/W 60 50 40 10 2 10 1 10 1 10 0 30 10 0 10 -1 20 10 10 -2 0 0.5 1 1.5 2 2.5 3 V VF 4 0 10 -1 0 20 40 60 80 C TA 120 0 20 40 60 80 C 100 TA Total power dissipation for emitter and detector Ptot= f (TA) 160 OHF00410 Detector P tot 140 120 100 80 60 40 20 0 Emitter 0 20 40 60 80 C 100 TA Semiconductor Group 5 1998-10-14 |
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