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| Advanced Power MOSFET FEATURES Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitances Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10uA (Max.) @ VDS=-200V Lower RDS(ON) : 0.175 (Typ.) SFH9250L BVDSS = -200 V RDS(on) = 0.23 ID = -19.5 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds Value -200 -19.5 -12.3 -78 20 990 -19.5 20.4 -5.0 204 1.63 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ C C 300 Thermal Resistance Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.61 -40 C /W Units Rev. A SFH9250L Electrical Characteristics (TC=25C unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(Miller) Charge ------------.175 0.23 13 -Min. Typ. Max. Units -200 --1.0 ------0.17 --------2.0 100 -100 10 100 A S pF V V nA P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250A See Fig 7 VDS=-5V,ID=-250A VGS=-20V VGS=20V VDS=-200V VDS=-160V,TC=125 C VGS=-5V,ID=-9.8A VDS=-40V,ID=-9.8A V/ C ID=-250A 2500 3250 400 520 210 270 20 50 ns 150 310 100 210 65 90 12 54 140 120 --nC VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-19.5A, RG=6.2 See Fig 13 VDS=-160V,VGS=-5V, ID=-19.5A See Fig 6 & Fig 12 Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --------260 2.8 -19.5 -78 -1.5 --A V Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-19.5A,VGS=0V ns TJ=25 C,IF=-19.5A,VDD=-160V C diF/dt=100A/s Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=3.9mH, IAS=-19.5A, VDD=-50V, RG=27, Starting TJ =25 ISD-19.5A, di/dt500A/s, VDDBVDSS , Starting TJ =25 Pulse Test : Pulse Width 300s, Duty Cycle 2% Essentially Independent of Operating Temperature P-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS Top : -10.0 V -8.0 V -6.0 V -5.0 V -4.5 V -4.0 V -3.5 V Bottom : -3.0 V SFH9250L Fig 2. Transfer Characteristics -I D , Drain Current [A] 10 1 -I D, Drain Current [A] 10 1 150 10 0 25 -55 Note 1. VDS = -40V 2. 250 s Pulse Test 10 0 Note : 1. 250 s Pulse Test 2. TC = 25 10 10 -1 -1 10 0 10 1 2 4 6 8 10 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 0.8 Fig 4. Source-Drain Diode Forward Voltage 0.6 VGS = - 5V -I DR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 10 1 0.4 VGS = - 10V 10 0 0.2 Note : TJ = 25 150 25 Note : 1. VGS = 0V 2. 250 s Pulse Test 0.0 0 20 40 60 80 100 10 -1 0.6 1.2 1.8 2.4 3.0 3.6 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 12000 10500 9000 7500 6000 4500 3000 1500 0 -1 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Fig 6. Gate Charge vs. Gate-Source Voltage 6 VDS = -40V -VGS, Gate-Source Voltage [V] VDS = -100V 4 Capacitances [pF] VDS = -160V Ciss Coss Crss Note ; 1. VGS = 0 V 2. f = 1 MHz 2 Note : ID = -19.5 A 0 10 0 10 1 0 20 40 60 80 100 -VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] SFH9250L Fig 7. Breakdown Voltage vs. Temperature 1.2 2.5 P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance 2.0 1.5 1.0 1.0 0.9 Note : 1. VGS = 0 V 2. ID = -250 A 0.5 Note : 1. VGS = -5 V 2. ID = -9.8 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig 9. Max. Safe Operating Area Operation in This Area is Limited by R DS(on) Fig 10. Max. Drain Current vs. Case Temperature 20 10 2 -I D, Drain Current [A] 1 ms 10 1 10 ms DC -I D, Drain Current [A] 100 s 15 10 10 0 Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 5 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 -VDS, Drain-Source Voltage [V] TC, Case Temperature [] Fig 11. Thermal Response 10 0 ( t) , T h e r m a l R e s p o n s e D = 0 .5 N o te s : 1 . Z J C( t ) = 0 . 6 1 / W M a x . 2 . D u ty F a c to r, D = t1/t2 3 . T J M - T C = P D M * Z J C( t ) 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 10 -2 PDM t1 s in g le p u ls e JC Z t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] P-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform SFH9250L 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg -5V VGS Qgs Qgd DUT -3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) td(on) t on tr td(off) t off tf Vin 10% -5V DUT VDS 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT IAS BVDSS VDD BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD tp Time VDS (t) ID (t) -5V SFH9250L Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms P-CHANNEL POWER MOSFET DUT + VDS _ IS L Driver RG Compliment of DUT (N-Channel) VDD VGS * dv/dt controlled by RG * IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 5V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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