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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
1.5+/-0.1
RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
TYPE NAME
FEATURES
High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V +/-10 V Tc=25C 3.6 W Zg=Zl=50 60 mW 600 mA C 150 -40 to +125 C C/W Junction to case 34.5
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS Vth Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=30mW f=520MHz,Idq=100mA MIN 1 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX 50 1 3 uA uA V W %
Note : Above parameters , ratings , limits and conditions are subject to change.
RD01MUS1
MITSUBISHI ELECTRIC 1/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
Vgs-Ids CHARACTERISTICS 1.0 0.8 0.6 0.4 0.2 0.0
Ta=+25C Vds=10V
RoHS Compliance, TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
Silicon MOSFET Power Transistor 520MHz,1W
4 CHANNEL DISSIPATION Pch(W)
3 Ids(A)
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
0
1
2 3 Vgs(V)
4
5
Vds-Ids CHARACTERISTICS 2.5
Ta=+25C Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V
Vds VS. Ciss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0
Ta=+25C f=1MHz
2 1.5
Vgs=5V
1 0.5 0 0 2 4 6 Vds(V) 8 10
Vgs=4V
Vgs=3V
Ciss(pF)
Ids(A)
5
10 Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 4
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS
Ta=+25C f=1MHz
3 Crss(pF)
Coss(pF)
2
1
0 5 10 Vds(V) 15 20 0 5 10 Vds(V) 15 20
RD01MUS1
MITSUBISHI ELECTRIC 2/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
Pin-Po CHARACTERISTICS 100
Po
RoHS Compliance, TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 35 30 Po(dBm) , Gp(dB) , Idd(A) 25 20 15 10 5 0 -10
Ta=+25C f=520MHz Vdd=7.2V Idq=100mA Gp Po
Silicon MOSFET Power Transistor 520MHz,1W
100 90 Pout(W) , Idd(A) 80 d(%) 70 60 50 40 30 0 Pin(dBm) 10 20
2.0 1.8 1.6 1.4 1.0 0.8 0.6 0.4 0.2 0.0 0 20 Pin(mW) 40 60
Idd Ta=25C f=520MHz Vdd=7.2V Idq=100mA
80
d
40 20 0
Vdd-Po CHARACTERISTICS 4.0 3.5 3.0 2.5 Po(W) 2.0 1.5 1.0 0.5 0.0 4 6 8 10 Vdd(V) 12 14
Ta=25C f=520MHz Pin=30mW Idq=100mA Zg=ZI=50 ohm Po
0.8 0.7 0.6
Idd
0.5 0.4 0.3 0.2 0.1 0.0 Idd(A)
RD01MUS1
MITSUBISHI ELECTRIC 3/6
10 Jan 2006
d(%)
1.2
60
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
Vdd
RoHS Compliance, TEST CIRCUIT(f=520MHz)
Vgg
Silicon MOSFET Power Transistor 520MHz,1W
C1 18m m
11m m
C2
10uF,50V
5m m 4.7kO HM 4m m R F-IN 62pF 24pF 240pF 68O HM 3pF 30m m 13m m RD 01MUS1 6.5m m 4m m 5.5m m 3m m L1
68pF
17.5m m 25.5m m 4m m RF-O UT 62pF 10pF
L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D C 1,C2: 1000pF,0.022uF in parallel
Note:Board m aterial-glass epoxi substrate Micro strip line width=1.0m m /50O HM,er:4.8,t=0.6m m
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
520MHz Zin* Zout* Zo=50
Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W
520MHz Zin*
Zin* =3.11+j11.56 Zout*=11.64+j4.74
520MHz Zout* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance
RD01MUS1
MITSUBISHI ELECTRIC 4/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
S12 (mag) 0.043 0.050 0.053 0.054 0.053 0.052 0.051 0.049 0.047 0.046 0.045 0.043 0.041 0.039 0.036 0.033 0.031 0.028 0.026 0.023 0.021 0.018 (ang) 41.3 26.5 16.1 8.4 2.6 -2.4 -6.6 -9.9 -13.3 -14.1 -15.8 -18.5 -21.0 -22.3 -24.9 -25.7 -26.8 -27.8 -27.3 -27.0 -26.3 -23.8 (mag) 0.772 0.687 0.630 0.600 0.588 0.583 0.590 0.597 0.608 0.615 0.622 0.636 0.650 0.666 0.680 0.694 0.711 0.723 0.734 0.749 0.760 0.771 S22 (ang) -63.0 -83.1 -97.3 -107.1 -114.4 -120.1 -124.6 -128.4 -131.7 -133.1 -134.8 -137.3 -140.1 -142.4 -144.6 -146.8 -148.8 -150.9 -152.9 -154.5 -156.3 -158.2
RoHS Compliance,
Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.927 0.875 0.833 0.811 0.798 0.791 0.790 0.788 0.794 0.796 0.798 0.801 0.807 0.813 0.817 0.825 0.831 0.837 0.845 0.851 0.857 0.862 (ang) -77.0 -101.2 -117.9 -129.5 -138.0 -144.5 -149.7 -154.1 -158.0 -159.2 -161.2 -164.2 -167.0 -169.3 -171.6 -174.0 -176.0 -178.0 -179.9 178.2 176.5 174.7
Silicon MOSFET Power Transistor 520MHz,1W
RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
S21 (mag) (ang) 19.536 132.3 15.657 116.5 12.662 105.0 10.427 96.2 8.814 89.3 7.548 83.3 6.541 78.2 5.789 73.5 5.106 69.0 4.876 67.5 4.576 65.2 4.120 61.3 3.714 58.0 3.389 54.7 3.092 51.3 2.820 48.6 2.616 46.0 2.401 42.8 2.207 40.9 2.076 38.4 1.912 35.5 1.773 34.0
RD01MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.945 0.896 0.856 0.833 0.819 0.810 0.806 0.804 0.808 0.809 0.812 0.813 0.819 0.824 0.827 0.834 0.841 0.845 0.852 0.857 0.864 0.868 (ang) -72.3 -96.7 -113.9 -126.2 -135.1 -141.9 -147.7 -152.2 -156.4 -157.8 -159.9 -163.0 -166.0 -168.6 -171.0 -173.3 -175.5 -177.4 -179.4 178.6 176.9 175.0 S21 (mag) (ang) 19.517 135.2 15.937 119.5 13.050 107.7 10.830 98.6 9.194 91.6 7.890 85.3 6.868 80.1 6.084 75.3 5.382 70.7 5.139 69.1 4.831 66.7 4.356 62.7 3.931 59.3 3.597 56.0 3.283 52.4 2.991 49.8 2.779 47.1 2.554 43.8 2.350 41.9 2.209 39.4 2.035 36.3 1.889 34.8 S12 (mag) 0.039 0.046 0.049 0.050 0.050 0.049 0.047 0.046 0.044 0.044 0.042 0.040 0.038 0.036 0.034 0.031 0.029 0.026 0.024 0.022 0.019 0.017 (ang) 44.5 29.2 18.5 11.2 5.0 -0.3 -4.2 -7.7 -11.0 -12.4 -13.7 -16.2 -18.7 -20.8 -22.3 -23.7 -24.6 -25.9 -25.4 -24.3 -23.5 -20.1 (mag) 0.742 0.665 0.612 0.581 0.568 0.565 0.571 0.580 0.591 0.596 0.605 0.618 0.633 0.649 0.664 0.678 0.695 0.708 0.720 0.736 0.747 0.759 S22 (ang) -57.4 -76.6 -90.6 -100.4 -107.8 -113.8 -118.5 -122.3 -126.1 -127.5 -129.4 -132.2 -135.1 -137.6 -140.1 -142.5 -144.5 -146.7 -148.9 -150.7 -152.4 -154.6
RD01MUS1
MITSUBISHI ELECTRIC 5/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD01MUS1
MITSUBISHI ELECTRIC 6/6
10 Jan 2006

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