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CHA2093
20-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC Description
The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. IN
50 25
Vd
7034
OUT
Vg 1
Vg 2
20 Gain ( dB )
10 Noise Figure ( dB ) 9 8 7 6 5 4 3 2 1 0 10 15 20 25 30 35 40 Frequency ( GHz )
Main Features
Broad band performance 20-30GHz 2.2dB noise figure, 20-30GHz 15dB gain, 0.5dB gain flatness Low DC power consumption, 50mA 20dBm 3rd order intercept point Chip size : 1,67 x 1,03 x 0.1mm
18 16 14 12 10 8 6 4 2 0
On wafer typical measurements.
Main Characteristics
Tamb = +25C Symbol NF G G Parameter Noise figure, 20-30GHz Gain Gain flatness 13 Min Typ 2.2 15 0.5 1.0 Max 3.0 Unit dB dB dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20939042
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2093
Electrical Characteristics
Tamb = +25C, Vd = +4V Id=45mA Symbol Fop G G NF VSWRin VSWRout IP3 P1dB Id Parameter Operating frequency range Gain (1) Gain flatness (1) Noise figure (1) Input VSWR (1) Ouput VSWR (1) 3rd order intercept point
20-30GHz Low Noise Amplifier
Min 20 13
Typ
Max 30
Unit Ghz dB
15 0.5 2.2 1.0 3.0 3.0:1 3.0:1 20 13 50
dB dB
dBm dBm mA
Output power at 1dB gain compression Drain bias current
(1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires , the indicated parameter values should be improved.
Absolute Maximum Ratings (1)
Tamb = +25C Symbol Vd Pin Top Tstg Parameter Drain bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 4.0 +15 -40 to +85 -55 to +125 Unit V dBm C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA20939042
2/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C Bias Conditions : Vd = +4V Id=45mA
CHA2093
Freq GHz 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
MS11 dB -1.36 -1.98 -2.93 -4.5 -6.8 -10.02 -13.47 -14.68 -13.76 -12.83 -13.51 -14.3 -14.74 -14.63 -14.15 -13.71 -13.42 -13.54 -14.43 -14.48 -12.87 -8.84 -5.55 -3.72 -2.5 -1.88 -1.52 -1.32 -1.07 -0.93 -0.82 -0.68 -0.52 -0.5 -0.41 -0.37
PS11 140 121.9 101.1 77.7 50.1 16.4 -30 -86 -131 -159.2 177.8 170.9 167.2 168 163.4 155.8 145.5 124.4 100.2 56.9 5.6 -37.4 -73.3 -101.3 -123.2 -141.2 -155.7 -167.5 -177.6 172.6 164.7 157.2 149.5 142 135.3 128.4
MS12 dB -62.29 -58.39 -53.05 -49.08 -46.97 -44.52 -42.23 -40.43 -39.41 -38 -36.01 -34.99 -34.53 -34.46 -33.67 -33.27 -32.65 -32.6 -32.49 -31.69 -31.87 -31.22 -31.23 -32.96 -34.73 -35.69 -35.69 -37.95 -38.15 -43.41 -43.1 -43.1 -43.23 -44.08 -45.8 -45.05
PS12 -138.5 -130.1 -130.3 -146.8 -163.9 173.2 160.2 138.2 126.2 104.7 92.4 63.7 46.8 24.6 6.3 -7.6 -29.3 -51.5 -68.3 -88.8 -115.7 -140.4 -171 159.7 134.8 121.6 98 72.2 56.8 86.9 76.9 44.4 39.6 24 21 18.1
MS21 dB 4.35 7.36 9.77 11.61 12.9 13.86 14.55 15 15.36 15.69 15.79 15.96 15.98 15.84 15.75 15.6 15.55 15.46 15.48 15.48 15.24 14.69 13.43 11.43 9.01 6.2 3.35 0.36 -2.78 -6.02 -9.59 -13.6 -18.24 -24.6 -35.19 -37.14
PS21 51.6 27.2 0.8 -26.2 -53.2 -78.7 -103.5 -127 -149.8 -171.8 165.6 144.3 122.3 102.1 80.9 60.2 40.3 18.6 -2.8 -27.3 -53 -82.2 -112.8 -141.9 -168.7 167.5 145.9 125.7 107.4 89 71.9 55.3 40.2 27.2 30.1 126.8
MS22 dB -16.6 -16.75 -16.67 -16.77 -17.47 -17.67 -18.06 -18.55 -18.7 -17.9 -15.62 -14.48 -13.4 -12.6 -11.67 -11.4 -11.3 -10.33 -9.98 -8.88 -7.99 -6.86 -6.35 -6.69 -7.51 -8.65 -9.92 -11.17 -12.15 -12.5 -12.27 -11.82 -10.89 -9.87 -8.91 -8.04
PS22 151.6 145.1 137.9 129.8 122.7 122.2 118.4 118.4 125.4 131.3 131.1 127 120.5 116.3 107.1 100.6 96.1 91.6 85.7 80.2 70.5 58.1 40.1 20.4 1.5 -17 -36.6 -56.5 -78.9 -103.1 -127.3 -148.5 -166.3 -179.6 167.4 156.2
Ref. : DSCHA20939042
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2093
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C Vd = 4V ; Id = 45mA
20 15 10 Gain, RLoss ( dB ) 5
DBS11
20-30GHz Low Noise Amplifier
DBS22
Gain
0 -5 -10 -15 -20 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency ( GHz )
Typical Gain and Matching measurements on wafer.
20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Gain, NF ( dB )
Gain
NF
Gab
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Frequency ( GHz )
Typical Gain and Noise Figure measurements on wafer.
Ref. : DSCHA20939042
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
Typical Results
Tamb = +25C Vd = 4V ; Id = 45mA
CHA2093
F=20GHz Output power (dBm) Gass (dB) Gass (dB) 16 14 12 10 8 6 4 2 0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Input power (dBm) Pout Gain 16 14 12 10 8 6 4 2 0
F=30GHz 16 Output power (dBm) 14 12 10 8 6 4 2 0 -3 -2 -1 0 1 2 3 4 5 6 7 Input power (dBm)
Typical Output Power and Gain measurements in test jig
(included losses of the jig)
16 14 12 10 8 6 Pout Gain 4 2 0
Ref. : DSCHA20939042
5/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2093
Typical Chip Assembly
20-30GHz Low Noise Amplifier
To Vd DC Drain supply feed 47pF
7034 50 25
IN
OUT
47pF
47pF
To Vg1 DC Gate supply feed
To Vg2 DC Gate supply feed
Dimensions : 1670 x 1030m 10m
Mechanical data
1670 1365 1065
1030 445
CHA2093
445
565 865
Ref. : DSCHA20939042
6/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
Chip Biasing
CHA2093
This chip is a two stage amplifier, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way.
Vd 50 IN Vds1 Vg 1
The two requirements are : N1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). N2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 3.5V and Id = 30mA ( Vg1=Vg2)
25 OUT Vds2
Vg 2
Low Noise and high output power : Vd = 4.0V and Id = 45mA.( A separate acces to the gate voltages of the first and the output stage is provided. Nominal bias is obtained for a typical current of 30mA for the output stage and 15 mA for the first stage. The first step to bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then Vg1 is reduced to obtain 45 mA of current through the amplifier.
Ref. : DSCHA20939042
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2093
20-30GHz Low Noise Amplifier
Ordering Information
Chip form : CHA2093-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA20939042
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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