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| BBY52... Silicon Tuning Diodes High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment 1 BBY52-02L BBY52-02W 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless single LS (nH) Marking 0.4 K 0.6 KK * Preliminary Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 7 20 -55 ... 150 -55 ... 150 Unit V mA C 1 Oct-24-2002 BBY52... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 6 V VR = 6 V, TA = 85 C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz VR = 1 V, f = 1 GHz Series resistance CT1 /CT4 rS CT 1.4 0.95 0.9 0.85 1.1 1.85 1.5 1.35 1.15 1.6 0.9 2.2 2 1.75 1.45 2.1 1.7 pF Unit max. nA typ. IR 10 200 2 Oct-24-2002 BBY52... Diode capacitance CT = f = 1MHz TA = 25C 45 pA 2.6 pF 2.4 2.3 2.2 2.1 35 30 CT 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 V 4 IR 25 20 15 10 5 0 0 1 2 3 VR 3 (VR ) Reverse current IR = (VR) 4 5 V 7 VR Oct-24-2002 |
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