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2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222
JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596
100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated
FEATURES
* * * * * * Repetitive Avalanche Rating Isolated and Hermetically Sealed Low RDS(on) Ease of Paralleling Ceramic Feedthroughs Qualified to MIL-PRF-19500
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. I i ts ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy plecrut. us icis PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25 C PART NUMBER 2N7218 2N7219 2N7221 2N7222 V DS, Vo t ls 100 200 400 500 R DS(on) .070 .8 1 .5 5 .5 8 I, A m p s D 28 18 10 8
S C H E M ATIC
MECHANICAL OUTLINE
.545 .535
.144 DIA.
.050 .040
.685 .665
.800 .790
.550 .530
Pin Connection Pin 1: Drain Pin 2: Source Pin 3: Gate
1
2
3
.550 .510 .045 .035 .150 TYP. .260 .249
.005
.150 TYP.
7 03 R0
31 - 1 .
2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS ( C = 25C unless otherwise noted T
Parameter I @ VGS = 10V, TC = 25C D Continuous Drain Current JANTXV, JANTX, 2N7218 28 20 112 125 10 . 20
2
Units A A A W W/C V mJ A
I @ VGS = 10V, TC = 100C Continuous Drain Current D IM D P D @ TC = 25C Pulsed Drain Current
1
Maximum Power Dissipation Linear Derating Factor
VG S EA S IR A EA R TJ TSTG
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current
1
250 2 8
4
4
Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature
1
12.5
4
mJ C C
-55 to 150 300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle" Cag aet-ri "ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r
Min. 100 20 . -
Typ.
Max.
Units V
Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 2 A 3 0, 0 VG S = 1 V ID = 2 A 3 0, 8 VDS = VG S, D = 250 A I VD S = 8 V VG S = 0V 0, VD S = 8 V VG S = 0 , TJ = 125C 0, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 28A 0, VD S = 50 V See note 4 VD D = 5 V ID = 20A, RG =9.1 0, See note 4
-
0.077 0.125 40 . 25 250 100 -100 59 16 30.7 21 105 64 65
V A nA nA nC nC nC ns ns ns ns
Source-Drain Diode Ratings and Characteristics Parameter Min. VS D Diode Forward Voltage t Reverse Recovery Time t r r
Typ. -
Max. 15 . 400
Units V ns
Test Conditions TJ = 2 , IS = 28A 3,VG S = 0 V 5C TJ = 2 , IF= 28A,d/t<100A/s 3 5C id
Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient
Min. -
Typ. 0.21 -
Max. 10 . 48
Units
Test Conditions
C/W
Mutn sraefa, onig ufc lt smooth, and greased
Typical socket mount
1 . 2. 3 . 4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 5, trig C 8 @VD D= 2 V S a t n TJ = 25 , L > 4 0 H, RG = 25 , Peak IL = 28A P l e w d h < 300 s; Duty Cycle < 2 % us it See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS ( C = 25C unless otherwise noted T
Parameter I @ VGS = 10V, TC = 25C D Continuous Drain Current JANTXV, JANTX, 2N7219 18 11 72 125 10 . 20
2
Units A A A W W/C V mJ A
I @ VGS = 10V, TC = 100C Continuous Drain Current D IM D P D @ TC = 25C Pulsed Drain Current
1
Maximum Power Dissipation Linear Derating Factor
VG S EA S IR A EA R TJ TSTG
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current1 Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature
1
450 1 8
4
4
12.5
4
mJ C C
-55 to 150 300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle" Cag aet-ri "ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r
Min. 200 20 . -
Typ.
Max.
Units V
Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 1 A 3 0, 1 VG S = 1 V ID = 1 A 3 0, 8 VDS = VG S, D = 250 A I VD S = 1 0 V VG S = 0V 6, VD S = 1 0 V VG S = 0 , TJ = 125C 6, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 18A 0, VD S = 100 V See note 4 VD D = 1 0 V ID = 11A, RG =9.1 0, See note 4
-
0.18 0.25 40 . 25 250 100 -100 60 10.6 37.6 20 105 58 67
V A nA nA nC nC nC ns ns ns ns
Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient
Typ. -
Max. 15 . 500
Units V ns
Test Conditions TJ = 2 , IS = 18A 3,VG S = 0 V 5C TJ = 2 , IF= 18A,d/t<100A/s 3 5C id
Min. -
Typ. 0.21 -
Max. 10 . 48
Units
Test Conditions
C/W
Mutn sraefa, onig ufc lt smooth, and greased
Typical socket mount
1 . 2. 3 . 4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 0, trig C . @VD D= 5 V S a t n TJ = 25 , L > 21 mH, RG = 25 , Peak IL = 18A P l e w d h < 300 s; Duty Cycle < 2 % us it See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS ( C = 25C unless otherwise noted T
Parameter I @ VGS = 10V, TC = 25C D Continuous Drain Current JANTXV, JANTX, 2N7221 10 60 . 40 125 10 . 20
2
Units A A A W W/C V mJ A
I @ VGS = 10V, TC = 100C Continuous Drain Current D IM D P D @ TC = 25C Pulsed Drain Current
1
Maximum Power Dissipation Linear Derating Factor
VG S EA S IR A EA R TJ TSTG
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current1 Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature
1
650 1 0
4
4
12.5
4
mJ C C
-55 to 150 300 (.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle" Cag aet-ri "ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r
Min. 400 20 . -
Typ.
Max.
Units V
Test Conditions VG S = 0 , ID =1.0 mA, V V G S = 1 V ID = 6.0 A 3 0, VG S = 1 V ID = 1 A 3 0, 0 V DS = VG S, D = 250 A I VD S = 3 0 V VG S = 0V 2, VD S = 3 0 V VG S = 0 , TJ = 125C 2, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 10A 0, VD S = 200 V See note 4 VD D = 2 0 V ID = 6A, RG = 9.1 0, See note 4
-
0.55 0.70 40 . 25 250 100 -100 65 10 40.5 25 92 79 58
V A nA nA nC nC nC ns ns ns ns
Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient
Typ. -
Max. 15 . 600
Units V ns
Test Conditions TJ = 2 , IS = 10A 3,VG S = 0 V 5C TJ = 2 , IF= 10A,d/t<100A/s 3 5C id
Min. -
Typ. 0.21 -
Max. 10 . 48
Units
Test Conditions
C/W
Mutn sraefa, onig ufc lt smooth, and greased
Typical socket mount
1 . 2. 3 . 4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 0, trig C 14 @VD D= 5 V S a t n TJ = 25 , L > 1 . mH, RG = 25 , Peak IL = 10A P l e w d h < 300 s; Duty Cycle < 2 % us it See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS ( C = 25C unless otherwise noted T
Parameter I @ VGS = 10V, TC = 25C D Continuous Drain Current JANTXV, JANTX, 2N7222 80 . 50 . 32 125 10 . 20
2
Units A A A W W/C V mJ A
I @ VGS = 10V, TC = 100C Continuous Drain Current D IM D P D @ TC = 25C Pulsed Drain Current
1
Maximum Power Dissipation Linear Derating Factor
VG S EA S IR A EA R TJ TSTG
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current1 Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature
1
700 80 . 12.5
4
4
4
mJ C C
-55 to 150 300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle" Cag aet-ri "ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r
Min. 500 20 . -
Typ.
Max.
Units V
Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 5 0 A 3 0, . VG S = 1 V ID = 8 0 A 3 0, . VDS = VG S, D = 250 A I VD S = 4 0 V VG S = 0V 0, VD S = 4 0 V VG S = 0 , TJ = 125C 0, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 8.0A 0, VD S = 250 V See note 4 VD D = 2 0 V ID = 5.0A, RG = 9.1 5, See note 4
-
0.85 0.95 40 . 25 250 100 -100 68.5 12.5 42.4 21 73 72 51
V A nA nA nC nC nC ns ns ns ns
Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient
Typ. -
Max. 15 . 700
Units V ns
Test Conditions TJ = 2 , IS = 8.0A 3,VG S = 0 V 5C TJ = 2 , IF= 8.0A,d/t<100A/s 3 5C id
Min. -
Typ. 0.21 -
Max. 10 . 48
Units
Test Conditions
C/W
Mutn sraefa, onig ufc lt smooth, and greased
Typical socket mount
1 . 2. 3 . 4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 0, trig C A @VD D= 5 V S a t n TJ = 25 , L > 20 mH, RG = 25 , Peak IL = 8 P l e w d h < 300 s; Duty Cycle < 2 % us it See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

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