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| IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIII I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I I I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII THERMAL CHARACTERISTICS MAXIMUM RATINGS Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Unclamped Inducting Load Energy (See Figure 10) Total Power Dissipation @ TA = 25_C Derate above 25_C Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Rating Characteristic Symbol TJ, Tstg VCEO VCB VEB PD PD IC IB E MJE5730 Symbol RJC RJA 300 300 - 65 to + 150 MJE5731 2.0 0.016 40 0.32 350 350 1.0 1.0 3.0 5.0 20 3.125 62.5 Max MJE5731A CASE 221A-06 TO-220AB 375 375 (c) Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data * * * * . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. High Voltage PNP Silicon Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA REV 1 300 V to 400 V (Min) -- VCEO(sus) 1.0 A Rated Collector Current Popular TO-220 Plastic Package PNP Complements to the TIP47 thru TIP50 Series MJE5730 MJE5731 MJE5731A 1.0 AMPERE POWER TRANSISTORS PNP SILICON 300 - 350 - 400 VOLTS 40 WATTS Order this document by MJE5730/D _C/W _C/W Watts W/_C Watts W/_C Unit Unit Adc Adc Vdc Vdc Vdc mJ _C 1 II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIII I I III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII MJE5730 MJE5731 MJE5731A (1) Pulse Test: Pulse Width ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) Current Gain -- Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) (VCE = 350 Vdc, VBE = 0) (VCE = 400 Vdc, VBE = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) 2 200 v 300 s, Duty Cycle v 2.0%. VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 3.0 2.0 0.02 0.03 5.0 hFE, DC CURRENT GAIN 10 30 20 50 TJ = 150C - 55C 25C 0.05 Figure 1. DC Current Gain 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) Characteristic VCE = 10 V 1.0 2.0 0.2 0.4 0.6 0.8 1.2 1.4 MJE5730 MJE5731 MJE5731A MJE5730 MJE5731 MJE5731A MJE5730 MJE5731 MJE5731A 0 0.02 0.03 1 Figure 2. Collector-Emitter Saturation Voltage Motorola Bipolar Power Transistor Device Data VCE(sat)) @ IC/IB = 5.0 VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICES hFE hfe fT Min 300 350 375 25 10 30 10 -- -- -- -- -- -- -- -- -- TJ = 25C Max 150 -- 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 -- -- -- -- -- - 55C mAdc mAdc mAdc 150C MHz Unit Vdc Vdc Vdc -- -- 0.05 0.2 0.3 0.1 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 MJE5730 MJE5731 MJE5731A 1.4 1.2 0.8 V, VOLTAGE (V) VBE(sat) @ IC/IB = 5.0 0.8 25C 0.6 0.4 0.2 0 0.02 0.03 0 150C DERATING FACTOR 1.0 TJ = - 55C 1.0 SECOND BREAKDOWN DERATING 0.6 THERMAL DERATING 0.4 0.2 0.05 0.1 0.2 0.3 0.5 1.0 2.0 0 25 IC, COLLECTOR CURRENT (AMPS) 150 50 75 100 125 TC, CASE TEMPERATURE (C) 175 Figure 3. Base-Emitter Voltage Figure 4. Normalized Power Derating 10 5.0 IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJE5730 MJE5731 MJE5732 10 20 30 50 200 300 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 TC = 25C dc 1.0 ms 500 s 100 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 5. Forward Bias Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1k 0.01 0.01 0.02 Figure 6. Thermal Response Motorola Bipolar Power Transistor Device Data 3 MJE5730 MJE5731 MJE5731A TURN-ON PULSE t1 VBE(off) Vin APPROX . -11 V t2 t3 51 Cjd << Ceb 0V VCC t1 7.0 ns 100 t2 < 500 s t3 < 15 ns RC SCOPE RB Vin APPROX. + 9.0 V DUTY CYCLE 2.0% + 4.0 V TURN-OFF PULSE Figure 7. Switching Time Equivalent Circuit 1.0 0.5 0.3 t, TIME ( s) 0.2 0.1 0.05 0.03 0.02 0.01 0.02 0.03 td tr TJ = 25C VCC = 200 V IC/IB = 5.0 t, TIME ( s) 5.0 3.0 2.0 tf 1.0 0.5 0.3 0.2 0.1 0.05 0.02 0.03 ts TJ = 25C VCC = 200 V IC/IB = 5.0 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 Figure 8. Turn-On Resistive Switching Times Figure 9. Resistive Turn-Off Switching Times Test Circuit VCE MONITOR MJE171 50 INPUT 50 + VBB1 = 10 V - RBB2 = 100 RBB1 = 150 TUT + - VBB2 = 0 RS = 0.1 INPUT VOLTAGE 100 mH VCC = 20 V IC MONITOR Voltage and Current Waveforms tw 3 ms (SEE NOTE 1) 0V -5 V 100 ms 0.63 A COLLECTOR CURRENT 0 V VCER COLLECTOR VOLTAGE 10 V VCE(sat) Figure 10. Inductive Load Switching 4 Motorola Bipolar Power Transistor Device Data MJE5730 MJE5731 MJE5731A PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 MJE5730 MJE5731 MJE5731A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://www.mot.com/SPS/ 6 Motorola Bipolar Power Transistor Device Data MJE5730/D |
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